TI TS5A3159-EP

TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
FEATURES
•
•
•
•
•
•
•
•
•
(1)
Controlled Baseline
– One Assembly/Test Site, One Fabrication
Site
Enhanced Diminishing Manufacturing
Sources (DMS) Support
Enhanced Product-Change Notification
Qualification Pedigree (1)
Specified Break-Before-Make Switching
Low ON-State Resistance (1 Ω)
Control Inputs Are 5-V Tolerant
Low Charge Injection
Excellent ON-State Resistance Matching
Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not liited to,
Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this componenet beyond specified
performance and environmental limits.
•
•
•
•
Low Total Harmonic Distortion
1.65-V to 5.5-V Single-Supply Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2000-V Human-Body Model
(A114-B, Class II)
– 1000-V Charged-Device Model (C101)
APPLICATIONS
•
•
•
Cell Phones
PDAs
Portable Instrumentation
SOT-23 PACKAGE
(TOP VIEW)
NO
1
6 IN
GND
2
5
V+
NC
3
4
COM
DESCRIPTION/ORDERING INFORMATION
The TS5A3159-EP is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to
5.5 V. The device offers a low ON-state resistance and an excellent ON-state resistance matching with the
break-before-make feature to prevent signal distortion during the transferring of a signal from one channel to
another. The device has excellent total harmonic distortion (THD) performance and consumes very low power.
These features make this device suitable for portable audio applications.
Summary of Characteristics (1)
Configuration
Number of channels
ON-state resistance (ron)
2:1 Multiplexer/
Demultiplexer
(1 × SPDT)
1
1.1 Ω
ON-state resistance match (∆ron)
0.1 Ω
ON-state resistance flatness (ron(flat))
0.15 Ω
Turn-on/turn-off time (tON/tOFF)
20 ns/15 ns
Break-before-make time (tBBM)
12 ns
Charge injection (QC)
36 pC
Bandwidth (BW)
100 MHz
OFF isolation (OISO)
–65 dB at 1 MHz
Crosstalk (XTALK)
–66 dB at 1 MHz
Total harmonic distortion (THD)
0.01%
Leakage current (INO(OFF)/(INC(OFF))
±20 nA
Package option
(1)
6-pin DBV
V+ = 5 V and TA = 25°C
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2005–2006, Texas Instruments Incorporated
TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
ORDERING INFORMATION
PACKAGE (1)
TA
–55°C to 125°C
(1)
SOT (SOT-23) – DBV
ORDERABLE PART NUMBER
Tape and reel
TS5A3159MDBVREP
TOP-SIDE MARKING
JA8R
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
FUNCTION TABLE
NC TO COM,
COM TO NC
NO TO COM,
COM TO NO
L
ON
OFF
H
OFF
ON
IN
Absolute Maximum Ratings (1)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
V+
Supply voltage range (2)
–0.5
6.5
V
VNO
VCOM
Analog voltage range (2) (3) (4)
–0.5
V+ + 0.5
V
II/OK
Analog port diode current
VNO, VCOM < 0 or VNO, VCOM > V+
INO
ICOM
On-state switch current
VNO, VCOM = 0 to V+
On-state peak switch current (5)
VIN
Digital input voltage range (2) (3)
IIK
Digital input clamp current
–0.5
VIN < 0
Continuous current through V+ or GND
θJA
Package thermal impedance (6)
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
2
–65
UNIT
±50
mA
±200
mA
±400
mA
6.5
V
–50
mA
±100
mA
165
°C/W
150
°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "Electrical Characteristics" is
not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Pulse at 1-ms duration < 10% duty cycle.
The package thermal impedance is calculated in accordance with JESD 51-7.
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
Electrical Characteristics for 5-V Supply
V+ = 4.5 V to 5.5 V (5 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP (1)
MAX
UNIT
Analog Switch
Analog signal
range
VCOM,
VNC, VNO
0
Peak ON
resistance
rpeak
0 ≤ VNO or VNC ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 11
25°C
ON-state
resistance
ron
VNO or VNC = 2.5 V,
ICOM = –30 mA,
Switch ON,
See Figure 11
25°C
ON-state
resistance
match
between
channels
∆ron
VNO or VNC = 2.5 V,
ICOM = –30 mA,
Switch ON,
See Figure 11
25°C
4.5 V
Switch ON,
See Figure 11
25°C
4.5 V
ON-state
resistance
flatness
ron(flat)
0 ≤ VNO or VNC ≤ V+,
ICOM = –30 mA
VNO or VNC = 1 V, 1.5 V, 2.5 V,
ICOM = –30 mA
NC, NO
OFF leakage
current
INC(OFF),
INO(OFF)
VNC or VNO = 4.5 V,
VCOM = 0,
Switch OFF,
See Figure 12
NC, NO
ON leakage
current
INC(ON),
INO(ON)
VNC or VNO = 4.5 V,
VCOM = Open,
Switch ON,
See Figure 13
COM
ON leakage
current
ICOM(ON)
VNC or VNO = 4.5 V or Open,
VCOM = 4.5 V,
Switch ON,
See Figure 13
Full
Full
V+
1
4.5 V
1.5
1.5
0.75
4.5 V
1.1
1.3
V
Ω
Ω
Ω
0.1
0.233
Ω
0.15
25°C
Full
–6
5.5 V
25°C
Full
–6
5.5 V
25°C
Full
4
60
2.8
–40
–4
5.5 V
0.2
–20
4
70
0.47
nA
nA
7
nA
–40
80
2.4
5.5
V
0
0.8
V
–1
1
µA
Digital Control Input (IN)
Input logic
high
VIH
Full
Input logic low
VIL
Full
Input leakage
current
IIH, IIL
(1)
VI = 5.5 V or 0
Full
5.5 V
TA = 25°C
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3
TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
Electrical Characteristics for 5-V Supply (continued)
V+ = 4.5 V to 5.5 V (5 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP (1)
MAX
4.5 V to
5.5 V
20
35
4.5 V to
5.5 V
15
TA
V+
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
25°C
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
25°C
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
25°C
Full
4.5 V to
5.5 V
Charge
injection
QC
CL = 1 nF,
VGEN = 0 V,
See Figure 20
25°C
5V
36
pC
Full
Full
40
20
35
1
12
14.5
1
ns
ns
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 14
25°C
5V
23
pF
NC, NO
ON
capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 14
25°C
5V
84
pF
COM
ON
capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 14
25°C
5V
84
pF
Digital input
capacitance
CIN
VIN = V+ or GND,
See Figure 14
25°C
5V
2.1
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 17
25°C
5V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
25°C
5V
–65
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
25°C
5V
–65
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 600 Hz to 20 kHz,
See Figure 21
25°C
5V
0.01
%
VIN = V+ or GND,
Switch ON or OFF
Full
5.5 V
Supply
Positive supply
current
4
I+
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0.1
µA
TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
Electrical Characteristics for 3.3-V Supply
V+ = 3 V to 3.6 V (3.3 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP (1)
MAX
UNIT
Analog Switch
Analog signal
range
VCOM,
VNC, VNO
Peak ON
resistance
rpeak
ON-state
resistance
ron
ON-state
resistance
match
between
channels
∆ron
ON-state
resistance
flatness
ron(flat)
0
0 ≤ VNO or VNC ≤ V+,
ICOM = –24 mA,
Switch ON,
See Figure 11
25°C
VNO or VNC = 2 V,
ICOM = –24 mA,
Switch ON,
See Figure 11
25°C
VNO or VNC = 2 V, 0.8 V,
ICOM = –24 mA,
Switch ON,
See Figure 11
25°C
3V
Switch ON,
See Figure 11
25°C
3V
0 ≤ VNO or VNC ≤ V+,
ICOM = –24 mA
VNO or VNC = 2 V, 0.8 V,
ICOM = –24 mA
Full
Full
V+
1.35
3V
2.15
2.15
1.15
3V
1.7
1.7
V
Ω
Ω
Ω
0.11
0.225
Ω
0.25
NC, NO
OFF leakage
current
INC(OFF),
INO(OFF)
VNC or VNO = 3 V,
VCOM = 0,
Switch OFF,
See Figure 12
25°C
3.6 V
0.2
nA
NC, NO
ON leakage
current
INC(ON),
INO(ON)
VNC or VNO = 3 V,
VCOM = Open,
Switch ON,
See Figure 13
25°C
3.6 V
2.8
nA
COM
ON leakage
current
ICOM(ON)
VNC or VNO = 3 V or Open,
VCOM = 3 V,
Switch ON,
See Figure 13
25°C
3.6 V
0.47
nA
Digital Control Input (IN)
Input logic high
VIH
Full
2
Input logic low
VIL
Full
0
Input leakage
current
IIH, IIL
(1)
VI = 5.5 V or 0
Full
3.6 V
–1
5.5
0.6
V
V
1
µA
TA = 25°C
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
Electrical Characteristics for 3.3-V Supply (continued)
V+ = 3 V to 3.6 V (3.3 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP (1)
MAX
3 V to
3.6 V
30
40
3 V to
3.6 V
20
TA
V+
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
25°C
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
25°C
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
25°C
Full
3 V to
3.6 V
CL = 1 nF,
VGEN = 0 V,
See Figure 20
25°C
3.3 V
20
pC
Charge injection
QC
Full
Full
55
25
40
1
21
29
1
ns
ns
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 14
25°C
3.3 V
23
pF
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 14
25°C
3.3 V
84
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 14
25°C
3.3 V
84
pF
Digital input
capacitance
CIN
VIN = V+ or GND,
See Figure 14
25°C
3.3 V
2.1
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 17
25°C
3.3 V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
25°C
3.3 V
–65
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
25°C
3.3 V
–65
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 600 Hz to 20 kHz,
See Figure 21
25°C
3.3 V
0.015
%
VIN = V+ or GND,
Switch ON or OFF
Full
3.6 V
Supply
Positive supply
current
6
I+
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0.1
µA
TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
Electrical Characteristics for 2.5-V Supply
V+ = 2.3 V to 2.7 V (2.5 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP (1)
MAX
UNIT
Analog Switch
Analog signal
range
VCOM,
VNC, VNO
0
Peak ON
resistance
rpeak
0 ≤ VNO or VNC ≤ V+,
ICOM = –8 mA,
Switch ON,
See Figure 11
25°C
ON-state
resistance
ron
VNO or VNC = 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 11
25°C
ON-state
resistance
match
between
channels
∆ron
VNO or VNC = 0.8 V, 1.8 V,
ICOM = –8 mA,
Switch ON,
See Figure 11
25°C
2.5 V
Switch ON,
See Figure 11
25°C
2.5 V
ON-state
resistance
flatness
ron(flat)
0 ≤ VNO or VNC ≤ V+,
ICOM = –8 mA
VNO or VNC = 0.8 V, 1.8 V,
ICOM = –8 mA
Full
Full
V+
1.7
2.5 V
2.7
2.9
1.45
2.5 V
2.3
2.5
V
Ω
Ω
Ω
0.7
0.5
Ω
0.45
NC, NO
OFF leakage
current
INC(OFF),
INO(OFF)
VNC or VNO = 2.3 V,
VCOM = 0,
Switch OFF,
See Figure 12
25°C
2.7 V
0.2
nA
NC, NO
ON leakage
current
INC(ON),
INO(ON)
VNC or VNO = 2.3 V,
VCOM = Open,
Switch ON,
See Figure 13
25°C
2.7 V
2.8
nA
COM
ON leakage
current
ICOM(ON)
VNC or VNO = 2.3 V or Open,
VCOM = 2.3 V,
Switch ON,
See Figure 13
25°C
2.7 V
0.47
nA
Digital Control Input (IN)
Input logic high
VIH
Full
1.8
Input logic low
VIL
Full
0
Input leakage
current
IIH, IIL
(1)
VI = 5.5 V or 0
Full
2.7 V
–1
5.5
0.6
V
V
1
µA
TA = 25°C
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
Electrical Characteristics for 2.5-V Supply (continued)
V+ = 2.3 V to 2.7 V (2.5 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP (1)
MAX
2.3 V to
2.7 V
40
55
2.3 V to
2.7 V
30
TA
V+
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
25°C
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
25°C
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
25°C
Full
2.3 V to
2.7 V
CL = 1 nF,
VGEN = 0 V,
See Figure 20
25°C
2.5 V
13
pC
Charge injection
QC
Full
Full
70
40
55
1
33
39
1
ns
ns
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 14
25°C
2.5 V
23
pF
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 14
25°C
2.5 V
84
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 14
25°C
2.5 V
84
pF
Digital input
capacitance
CIN
VIN = V+ or GND,
See Figure 14
25°C
2.5 V
2.1
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 17
25°C
2.5 V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
25°C
2.5 V
–64
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
25°C
2.5 V
–64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 600 Hz to 20 kHz,
See Figure 21
25°C
2.5 V
0.025
%
VIN = V+ or GND,
Switch ON or OFF
Full
2.7 V
Supply
Positive supply
current
8
I+
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0.1
µA
TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
Electrical Characteristics for 1.8-V Supply
V+ = 1.65 V to 1.95 V (1.8 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN TYP (1)
MAX
UNIT
Analog Switch
Analog signal
range
VCOM,
VNC, VNO
0
Peak ON
resistance
rpeak
0 ≤ VNO or VNC ≤ V+,
ICOM = –2 mA,
Switch ON,
See Figure 11
25°C
ON-state
resistance
ron
VNO or VNC = 1.5 V,
ICOM = –2 mA,
Switch ON,
See Figure 11
25°C
ON-state
resistance
match
between
channels
ON-state
resistance
flatness
Full
Full
4
1.8 V
ron(flat)
VNO or VNC = 0.6 V, 1.5 V,
ICOM = –2 mA,
0 ≤ VNO or VNC ≤ V+,
ICOM = –2 mA
Switch ON,
See Figure 11
Full
1.7
1.8 V
Switch ON,
See Figure 11
Full
25°C
3.2
4.2
V
Ω
Ω
0.7
1.8 V
Ω
0.7
25°C
VNO or VNC = 0.6 V, 1.5 V,
ICOM = –2 mA
4.9
7
25°C
∆ron
V+
1.85
1.85
1.8 V
Ω
0.9
Full
0.9
NC, NO
OFF leakage
current
INC(OFF),
INO(OFF)
VNC or VNO = 1.65 V,
VCOM = 0,
Switch OFF,
See Figure 12
25°C
1.95 V
0.2
nA
NC, NO
ON leakage
current
INC(ON),
INO(ON)
VNC or VNO = 1.65 V,
VCOM = Open,
Switch ON,
See Figure 13
25°C
1.95 V
2.8
nA
COM
ON leakage
current
ICOM(ON)
VNC or VNO = 1.65 V or
Open,
VCOM = 1.65 V,
Switch ON,
See Figure 13
25°C
1.95 V
0.47
nA
Digital Control Input (IN)
Input logic high
VIH
Full
1.5
Input logic low
VIL
Full
0
Input leakage
current
IIH, IIL
(1)
VI = 5.5 V or 0
Full
1.95 V
–1
5.5
0.6
V
V
1
µA
TA = 25°C
Submit Documentation Feedback
9
TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
Electrical Characteristics for 1.8-V Supply (continued)
V+ = 1.65 V to 1.95 V (1.8 V nominal), TA = –55°C to 125°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP (1)
MAX
1.65 V to
1.95 V
65
70
1.65 V to
1.95 V
40
TA
V+
UNIT
Dynamic
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
25°C
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 15
25°C
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 16
25°C
Full
1.65 V to
1.95 V
CL = 1 nF,
VGEN = 0 V,
See Figure 20
25°C
1.8 V
13
pC
Charge injection
QC
Full
Full
95
55
70
1
60
72
0.5
ns
ns
ns
NC, NO
OFF
capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 14
25°C
1.8 V
23
pF
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch ON,
See Figure 14
25°C
1.8 V
84
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 14
25°C
1.8 V
84
pF
Digital input
capacitance
CIN
VIN = V+ or GND,
See Figure 14
25°C
1.8 V
2.1
pF
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 17
25°C
1.8 V
100
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 18
25°C
1.8 V
–63
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 1 MHz,
Switch ON,
See Figure 19
25°C
1.8 V
–63
dB
VIN = V+ or GND,
Switch ON or OFF
Full
1.95 V
Supply
Positive supply
current
10
I+
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µA
TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
TYPICAL PERFORMANCE
1.6
3.5
V+ = 3 V
TA = 25C
1.4
3
2.5
V+ = 1.8 V
ron (Ω)
ron (Ω)
TA = 25°C
1
2
V+ = 2.5 V
1.5
TA = −40°C
0.8
0.6
V+ = 3 V
1
0.4
V+ = 4.5 V
0.5
0
TA = 85°C
1.2
0
1
0.2
2
3
0
4
0
1
2
3
VCOM (V)
VCOM (V)
Figure 1. ron vs VCOM
Figure 2. ron vs VCOM
18
1.2
V+ = 4.5 V
V+ = 5 V
16
1
TA = 85°C
14
12
Leakage (nA)
ron (Ω)
0.8
TA = 25°C
0.6
TA = −40°C
10
INC(ON)
8
6
0.4
ICOM(ON)
4
INO(ON)
0.2
2
INO(OFF)
0
0
1
2
3
INC(OFF)
0
4
−40
−20
0
VCOM (V)
20
40
60
80
100
Temperature (°C)
Figure 3. ron vs VCOM
Figure 4. Leakage Current vs Temperature
50
20
VCOM = V+
TA = 25°C
tr < 20 ns
tf < 20 ns
40
tr = 2.5 ns
tf = 2.5 ns
V+ = 5 V
18
16
tON/tOFF (ns)
tON/tOFF (ns)
14
30
20
12
10
8
6
4
10
2
0
−40
0
0
1
2
3
4
5
6
−20
0
20
40
60
80
100
Temperature (°C)
Supply Voltage (V)
Figure 5. tON/tOFF vs V+
Figure 6. tON/tOFF vs Temperature
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
TYPICAL PERFORMANCE (continued)
0
OFF Isolation
−10
−1
Vt+
Bandwidth
−20
−2
−30
Vt–
1.5
Gain (dB)
Logic Threshold (Vt+/Vt–)
2
1
0.5
0
1.5
2
2.5
3
3.5
4
4.5
−4
−50
−5
−60
−6
−70
−7
−80
−8
−9
1
10
Power Supply (V)
100
1K
Frequency (MHz)
Figure 7. Logic Threshold vs Power Supply
Figure 8. Frequency Response
14
0.035
V+ = 3 V
12
0.030
10
0.025
THD + Noise (%)
ICC (nA)
V+ = 5 V
8
6
0.020
0.015
4
0.010
2
0.005
0
0
−40
−20
0
20
40
60
80
100
10
100
1K
10K
100K
Frequency (MHz)
Temperature (°C)
Figure 9. Power-Supply Current vs Temperature
12
−3
Crosstalk
−40
−90
0.1
5
0
Loss − dB
2.5
Figure 10. Total Harmonic Distortion (THD) vs Frequency
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
PIN DESCRIPTION
PIN
NO.
NAME
DESCRIPTION
1
NO
Normally open
2
GND
Digital ground
3
NC
4
COM
5
V+
Power supply
6
IN
Digital control to connect COM to NO or NC
Normally closed
Common
PARAMETER DESCRIPTION
SYMBOL
VCOM
DESCRIPTION
Voltage at COM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Resistance between COM and NO ports when the channel is ON
rpeak
Peak on-state resistance over a specified voltage range
∆ron
Difference of ron between channels in a specific device
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under
worst-case input and output conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VIN
Voltage at IN
IIH, IIL
Leakage current measured at IN
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
tBBM
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
delay between the output of two adjacent analog channels (NC and NO), when the control signal changes state.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control
input.Charge injection, QC = CL×∆ VCOM, CL is the load capacitance and ∆VCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CIN
Capacitance of IN
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NO to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2).
This is measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
PARAMETER DESCRIPTION (continued)
SYMBOL
14
DESCRIPTION
I+
Static power-supply current with the control (IN) pin at V+ or GND
∆I+
This is the increase in I+ for each control (IN) input that is at the specified voltage, rather than at V+ or GND.
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
PARAMETER MEASUREMENT INFORMATION
V+
VNC NC
COM
+
VCOM
Channel ON
VNO NO
r on VI
ICOM
IN
VCOM VNO or VNC
I COM
VI = VIH or VIL
+
GND
Figure 11. ON-State Resistance (ron)
V+
VNC NC
COM
+
VCOM
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
VNO NO
VI
IN
+
GND
Figure 12. OFF-State Leakage Current (INC(OFF), INO(OFF))
V+
VNC NC
COM
+
VNO NO
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
NOTE: See electrical characteristics for test conditions.
IN
+
GND
Figure 13. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON))
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V+
Capacitance
Meter
VCOM
COM
VNC
NC
VNO
NO
VI
IN
VBIAS = V+ or GND
VI = VIH or VIL
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
VBIAS
GND
Figure 14. Capacitance (CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))
V+
VCOM
VI
Logic
Input(1)
NC or NO
VNC or VNO
NC or NO
CL(2)
TEST
RL
CL
VCOM
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
COM
RL
IN
CL(2)
GND
RL
V+
Logic
Input
(VI)
50%
50%
0
tON
Switch
Output
(VNC or VNO)
(1)
(2)
90%
90%
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
CL includes probe and jig capacitance.
Figure 15. Turn-On (tON) and Turn-Off Time (tOFF)
16
tOFF
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
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SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V+
Logic
Input
(VI)
VNC or VNO
NC or NO
VCOM
V+
50%
0
COM
NC or NO
CL(2)
VI
IN
Logic
Input(1)
(1)
(2)
Switch
Output
(VCOM)
RL
90%
90%
tBBM
VNC or VNO = V+/2
RL = 50 Ω
CL = 35 pF
GND
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
CL includes probe and jig capacitance.
Figure 16. Break-Before-Make Time (tBBM)
V+
Network Analyzer
50 VNC
NC
Channel ON: NC to COM
COM
Source
Signal
VCOM
VI = VIH or VIL
NO
Network Analyzer Setup
50 VI
+
IN
Source Power = 0 dBM
(632-mV P-P at 50- load)
GND
DC Bias = 350 mV
Figure 17. Bandwidth (BW)
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V+
Network Analyzer
Channel OFF: NC to COM
50 VNC
NC
VI = VIH or VIL
COM
Source
Signal
50 VCOM
NO
Network Analyzer Setup
VI
50 Source Power = 0 dBM
(632-mV P-P at 50- load)
IN
+
GND
DC Bias = 350 mV
Figure 18. OFF Isolation (OISO)
V+
Network Analyzer
Channel ON: NC to COM
50 VNC
Channel OFF: NO to COM
NC
VCOM
Source
Signal
VNO
NO
VI
50 +
VI = VIH or VIL
50 IN
GND
Network Analyzer Setup
Source Power = 0 dBM
(632-mV P-P at 50- load)
DC Bias = 350 mV
Figure 19. Crosstalk (XTALK)
18
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TS5A3159-EP
1-Ω SPDT ANALOG SWITCH
www.ti.com
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
PARAMETER MEASUREMENT INFORMATION (continued)
V+
RGEN
VGEN
OFF
ON
OFF V
IL
NC or NO
COM
+
VIH
Logic
Input
(VI)
VCOM
∆VCOM
VCOM
NC or NO
CL(2)
VI
VGEN = 0 to V+
IN
Logic
Input(1)
(1)
(2)
RGEN = 0
CL = 0.1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
GND
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
CL includes probe and jig capacitance.
Figure 20. Charge Injection (QC)
Channel ON: COM to NC
VSOURCE = V+ P-P
V+/2
VI = VIH or VIL
V+
fSOURCE = 600 Hz to 20 kHz
RL
RL = 600 Ω
CL = 50 pF
10 F
VO
COM
NO
VSOURCE
RL
VI
10 F
NC
Analyzer
CL(1)
IN
+
GND
(1)
CL includes probe and jig capacitance.
Figure 21. Total Harmonic Distortion (THD)
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19
PACKAGE OPTION ADDENDUM
www.ti.com
5-Feb-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TS5A3159MDBVREP
ACTIVE
SOT-23
DBV
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
V62/06613-01XE
ACTIVE
SOT-23
DBV
6
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
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incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
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Addendum-Page 1
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