LM747 Dual Operational Amplifier General Description Features The LM747 is a general purpose dual operational amplifier. The two amplifiers share a common bias network and power supply leads. Otherwise, their operation is completely independent. Additional features of the LM747 are: no latch-up when input common mode range is exceeded, freedom from oscillations, and package flexibility. The LM747C/LM747E is identical to the LM747/LM747A except that the LM747C/LM747E has its specifications guaranteed over the temperature range from 0§ C to a 70§ C instead of b55§ C to a 125§ C. Y Y Y Y Y Y No frequency compensation required Short-circuit protection Wide common-mode and differential voltage ranges Low power consumption No latch-up Balanced offset null Connection Diagrams Dual-In-Line Package Metal Can Package TL/H/11479 – 5 TL/H/11479 – 4 Order Number LM747H See NS Package Number H10C Order Number LM747CN or LM747EN See NS Package Number N14A *V a A and V a B are internally connected. C1995 National Semiconductor Corporation TL/H/11479 RRD-B30M115/Printed in U. S. A. LM747 Dual Operational Amplifier November 1994 Absolute Maximum Ratings Supply Voltage LM747/LM747A LM747C/LM747E Indefinite Operating Temperature Range LM747/LM747A LM747C/LM747E g 22V g 18V Power Dissipation (Note 1) Differential Input Voltage g 15V Input Voltage (Note 2) Output Short-Circuit Duration If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. b 55§ C to a 125§ C 0§ C to a 70§ C Storage Temperature Range Lead Temperature (Soldering, 10 sec.) 800 mW g 30V b 65§ C to a 150§ C 300§ C Electrical Characteristics (Note 3) Parameter Conditions LM747A/LM747E Min Input Offset Voltage TA e 25§ C RS s 10 kX RS s 50X Typ Max 0.8 3.0 RS s 50X RS s 10 kX TA e 25§ C, VS e g 20V Input Offset Current TA e 25§ C 5.0 Max 2.0 6.0 7.5 g 15 3.0 g 15 30 20 200 70 85 500 TA e 25§ C TAMIN s TA s TAMAX 30 TA e 25§ C, VS e g 20V 1.0 VS e g 20V 0.5 80 0.3 2.0 TA e 25§ C TA e 25§ C, RL t 2 kX VS e g 20V, VO e g 15V g 13 20 200 g 12 500 1.5 80 0.3 2.0 g 12 g 13 VS e g 20V RL t 10 kX RL t 2 kX TA e 25§ C 50 200 20 200 32 Common-Mode Rejection Ratio RS s 10 kX, VCM e g 12V RS s 50 kX, VCM e g 12V 15 V V/mV V/mV 10 V/mV g 16 V g 15 25 g 12 g 14 g 12 g 14 g 10 g 13 g 10 g 13 35 40 25 70 80 MX V/mV 25 10 10 nA mA V/mV VS e g 15V RL t 10 kX RL t 2 kX Output Short Circuit Current 500 0.8 g 13 50 VS e g 15V, VO e g 10V VS e g 5V, VO e g 2V nA 300 RL t 2 kX VS e g 20V, VO e g 15V mV nA/§ C 80 0.210 6.0 mV mV 0.5 VS e g 15V, VO e g 10V Output Voltage Swing Units Typ mV/§ C g 10 g 12 Large Signal Voltage Gain 1.0 Min 6.0 Average Input Offset Current Drift Input Voltage Range Max 15 Input Offset Voltage Adjustment Range Input Resistance LM747C Typ 4.0 Average Input Offset Voltage Drift Input Bias Current LM747 Min 95 2 90 25 70 90 V mA dB Electrical Characteristics (Note 3) (Continued) Parameter Supply Voltage Rejection Ratio Conditions VS e g 20V to VS e g 5V RS s 50X RS s 10 kX Transient Response Rise Time Overshoot TA e 25§ C, Unity Gain Bandwidth (Note 4) TA e 25§ C Slew Rate TA e 25§ C, Unity Gain Supply Current/Amp TA e 25§ C Power Consumption/Amp TA e 25§ C VS e g 20V VS e g 15V LM747A LM747E LM747 LM747A/LM747E Min Typ 86 96 0.25 6.0 0.437 1.5 0.3 0.7 Max 0.8 20 Typ 77 96 LM747C Max Min Typ 77 96 Units Max dB 0.3 5 0.3 5 ms % 0.5 0.5 V/ms MHz 2.5 80 LM747 Min 1.7 2.8 1.7 2.8 50 85 50 85 150 mA mW VS e g 20V TA e TAMIN TA e TAMAX 165 135 mW VS e g 20V TA e TAMIN TA e TAMAX 150 150 150 mW VS e g 15V TA e TAMIN TA e TAMAX 60 45 100 75 mW Note 1: The maximum junction temperature of the LM747C/LM747E is 100§ C. For operating at elevated temperatures, devies in the TO-5 package must be derated based on a thermal resistance of 150§ C/W, junction to ambient, or 45§ C/W, junction to case. The thermal resistance of the dual-in-line package is 100§ C/ W, junction to ambient. Note 2: For supply voltages less than g 15V, the absolute maximum input voltage is equal to the supply voltage. Note 3: These specifications apply for g 5V s VS s g 20V and b 55§ C s TA s 125§ C for the LM747A and 0§ C s TA s 70§ C for the LM747E unless otherwise specified. The LM747 and LM747C are specified for VS e g 15V and b 55§ C s TA s 125§ C and 0§ C s TA s 70§ C, respectively, unless otherwise specified. Note 4: Calculated value from: 0.35/Rise Time (ms). Schematic Diagram (Each Amplifier) TL/H/11479 – 1 Note: Numbers in parentheses are pin numbers for amplifier B. DIP only. 3 Typical Performance Characteristics Input Bias and Offset Currents vs Ambient Temperature DC Parameters vs Supply Voltage Common Mode Rejection Ratio vs Frequency Output Voltage Swing vs Frequency Output Voltage Swing vs Load Resistance Output Swing and Input Range vs Supply Voltage Normalized DC Parameters vs Ambient Temperature Transient Response Frequency Characteristics vs Ambient Temperature Frequency Characteristics vs Supply Voltage Output Resistance vs Frequency Open Loop Transfer Characteristics vs Frequency TL/H/11479 – 2 4 Typical Performance Characteristics (Continued) Input Resistance and Input Capacitance vs Frequency Broadband Noise for Various Bandwidths Input Noise Voltage and Current vs Frequency Voltage Follower Large Signal Pulse Response TL/H/11479 – 3 5 6 Physical Dimensions inches (millimeters) Metal Can Package (H) Order Number LM747H NS Package Number H10C 7 LM747 Dual Operational Amplifier Physical Dimensions inches (millimeters) (Continued) Dual-In-Line Package (N) Order Number LM747CN or LM747EN NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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