NSC TS5A3166DBVRE4

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SCDS186 − FEBRUARY 2005
Description
Features
The TS5A3166 is a single-pole single-throw (SPST)
analog switch that is designed to operate from 1.65 V
to 5.5 V. The device offers a low ON-state resistance.
The device has excellent total harmonic distortion
(THD) performance and consumes very low power.
These features make this device suitable for portable
audio applications.
D Isolation in the Powered-Off Mode, V+ = 0
Applications
D Cell Phones
D PDAs
D Portable Instrumentation
D Audio and Video Signal Routing
D Low-Voltage Data-Acquisition Systems
D Communication Circuits
D Modems
D Hard Drives
D Computer Peripherals
D Wireless Terminals and Peripherals
D Microphone Switching – Notebook Docking
D Low ON-State Resistance (0.9 W)
D Control Inputs Are 5.5-V Tolerant
D Low Charge Injection
D Low Total Harmonic Distortion (THD)
D 1.65-V to 5.5-V Single-Supply Operation
D Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
D ESD Performance Tested Per JESD 22
− 2000-V Human-Body Model
(A114-B, Class II)
− 1000-V Charged-Device Model (C101)
Summary of Characteristics
V+ = 5 V, TA = 25°C
Single Pole
Single Throw
(SPST)
Configuration
SOT-23 OR SC-70 PACKAGE
(TOP VIEW)
NO 1
5
V+
COM 2
GND 3
4
YEP OR YZP PACKAGE
(BOTTOM VIEW)
GND
3
COM
2
NO
1
4
IN
Number of channels
1
ON-state resistance (ron)
ON-state resistance flatness (ron(flat))
Turn-on/turn-off time (tON/tOFF)
IN
5
V+
Charge injection (QC)
Bandwidth (BW)
IN
NO TO COM,
COM TO NO
L
OFF
H
ON
0.15 Ω
7.5 ns/12.5 ns
1 pC
200 MHz
OFF isolation (OISO)
FUNCTION TABLE
0.9 Ω
−64 dB at 1 MHz
Total harmonic distortion (THD)
0.005%
Leakage current (ICOM(OFF))
±20 nA
Power-supply current (I+)
Package option
0.5 µA
5-pin DSBGA, SOT-23,
or SC-70
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
! "#$ ! %#&'" ($
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Copyright  2005, Texas Instruments Incorporated
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SCDS186 − FEBRUARY 2005
ORDERING INFORMATION
PACKAGE(1)
TA
ORDERABLE PART NUMBER
NanoStar − WCSP (DSBGA)
0.23-mm Large Bump − YEP
−40°C to 85°C
NanoFree − WCSP (DSBGA)
0.23-mm Large Bump − YZP (Pb-free)
TOP-SIDE MARKING(2)
TS5A3166YEPR
Tape and reel
TS5A3166YZPR
SOT (SOT-23) − DBV
Tape and reel
TS5A3166DBVR
JAS_
SOT (SC-70) − DCK
Tape and reel
TS5A3166DCKR
JF_
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package.
(2) DBV/DCK: The actual top-side marking has one additional character that designates the assembly/test site.
YEP/YZP: The actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character
to designate the assembly/test site. Pin 1 identifier indicates solder-bump composition (1 = SnPb, • = Pb-free).
Absolute Minimum and Maximum Ratings(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
V+
VNO
VCOM
IK
Supply voltage range(3)
−0.5
6.5
V
Analog voltage range(3)(4)(5)
−0.5
V+ + 0.5
V
INO
ICOM
On-state switch current
VI
IIK
I+
IGND
θJA
Analog port diode current
VNO, VCOM < 0
On-state peak switch current(6)
Digital input voltage range(3)(4)
VNO, VCOM = 0 to V+
Digital input clamp current
VI < 0
−50
200
−400
400
−0.5
6.5
−50
mA
V
mA
100
Continuous current through GND
Package thermal impedance(7)
mA
−200
Continuous current through V+
UNIT
−100
mA
mA
DBV package
206
DCK package
252
YEP/YZP package
132
°C/W
C/W
Tstg
Storage temperature range
−65
150
°C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified
is not implied.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration < 10% duty cycle
(7) The package thermal impedance is calculated in accordance with JESD 51-7.
2
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SCDS186 − FEBRUARY 2005
Electrical Characteristics for 5-V Supply(1)
V+ = 4.5 V to 5.5 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
0.8
V+
1.1
UNIT
Analog Switch
Analog signal range
VCOM, VNO
0
Peak ON resistance
rpeak
0 ≤ VNO ≤ V+,
ICOM = −100 mA,
Switch ON,
See Figure 13
25 °C
ron
VNO = 2.5 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
ON-state resistance
flatness
NO
OFF leakage current
COM
OFF leakage current
ron(flat)
INO(OFF)
0 ≤ VNO ≤ V+,
ICOM = −100 mA
VNO = 1 V, 1.5 V, 2.5 V,
ICOM = −100 mA
VNO = 1 V, VCOM = 4.5 V,
or
VNO = 4.5 V, VCOM = 1 V
VNO = 0 to 5.5 V,
INO(PWROFF)
VCOM = 5.5 V to 0
ICOM(OFF)
VCOM = 1 V, VNO = 4.5 V,
or
VCOM = 4.5 V, VNO = 1 V
VNO = 0 to 5.5 V,
ICOM(PWROFF)
VCOM = 5.5 V to 0
Full
Full
4.5 V
1.2
0.7
4.5 V
1
25°C
Switch ON,
See Figure 13
25°C
0.9
0.09
0.15
−20
4
Full
nA
−100
25°C
−5
0V
25°C
100
0.4
−15
−20
5
15
4
Full
NO
ON leakage current
VNO = 1 V, VCOM = Open,
Switch ON,
or
See Figure 15
VNO = 4.5 V, VCOM = Open,
25°C
INO(ON)
COM
ON leakage current
VCOM = 1 V, VNO = Open,
Switch ON,
or
See Figure 15
VCOM = 4.5 V, VNO = Open,
25°C
ICOM(ON)
nA
−100
25°C
−5
0V
100
0.4
−15
−2
5
15
0.3
µA
A
2
5.5 V
Full
µA
A
20
5.5 V
Full
Ω
20
5.5 V
Switch OFF,
See Figure 14
Ω
0.15
25°C
Full
Ω
0.15
4.5 V
Full
Switch OFF,
See Figure 14
V
nA
−20
−2
20
0.3
2
5.5 V
nA
Full
−20
20
Full
2.4
5.5
V
Full
0
0.8
V
25°C
−2
Digital Control Input (IN)
Input logic high
Input logic low
Input leakage current
VIH
VIL
IIH, IIL
VI = 5.5 V or 0
Full
5.5 V
−20
0.3
2
20
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
3
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SCDS186 − FEBRUARY 2005
Electrical Characteristics for 5-V Supply(1) (continued)
V+ = 4.5 V to 5.5 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
4.5
MAX
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
5V
2.5
tON
Full
4.5 V to 5.5 V
1.5
7
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
5V
6
tOFF
Full
4.5 V to 5.5 V
4
CL = 1 nF,
See Figure 20
25°C
5V
1
pC
See Figure 16
25°C
5V
19
pF
7.5
9
ns
11.5
12.5
ns
Charge injection
QC
NO
OFF capacitance
CNO(OFF)
VGEN = 0,
RGEN = 0,
VNO = V+ or GND,
Switch OFF,
COM
OFF capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
5V
18
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
35.5
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
5V
35.5
pF
pF
Digital input
capacitance
CI
VI = V+ or GND,
See Figure 16
25°C
5V
2
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
5V
200
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 19
25°C
5V
−64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
5V
0.005
%
Supply
25°C
Positive supply
I+
VI = V+ or GND,
Switch ON or OFF
5.5 V
current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
4
0.01
0.1
0.5
µA
A
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SCDS186 − FEBRUARY 2005
Electrical Characteristics for 3.3-V Supply(1)
V+ = 3 V to 3.6 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
1.1
V+
1.5
UNIT
Analog Switch
Analog signal range
VCOM, VNO
0
Peak ON resistance
rpeak
0 ≤ VNO ≤ V+,
ICOM = −100 mA,
Switch ON,
See Figure 13
25 °C
ron
VNO = 2 V,
ICOM = −100 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
ON-state resistance
flatness
NO
OFF leakage current
COM
OFF leakage current
ron(flat)
INO(OFF)
0 ≤ VNO ≤ V+,
ICOM = −100 mA
VNO = 2 V, 0.8 V,
ICOM = −100 mA
VNO = 1 V, VCOM = 3 V,
or
VNO = 3 V, VCOM = 1 V
VNO = 0 to 3.6 V,
INO(PWROFF)
VCOM = 3.6 V to 0
ICOM(OFF)
VCOM = 1 V, VNO = 3 V,
or
VCOM = 3 V, VNO = 1 V
VCOM = 0 to 3.6 V,
ICOM(PWROFF)
VNO = 3.6 V to 0
Full
Full
3V
1.7
1
3V
1.5
25°C
Switch ON,
See Figure 13
25°C
1.4
0.09
0.15
−2
0.5
Full
nA
−20
25°C
−1
0V
25°C
20
0.1
−5
−2
1
5
0.5
Full
NO
ON leakage current
VNO = 1 V, VCOM = Open,
or
VNO = 3 V, VCOM = Open,
Switch ON,
See Figure 15
25°C
INO(ON)
COM
ON leakage current
VCOM = 1 V, VNO = Open,
or
VCOM = 3 V, VNO = Open,
Switch ON,
See Figure 15
25°C
ICOM(ON)
nA
−20
25°C
−1
0V
20
0.1
−5
−2
1
5
0.2
µA
A
2
3.6 V
Full
µA
A
2
3.6 V
Full
Ω
2
3.6 V
Switch OFF,
See Figure 14
Ω
0.15
25°C
Full
Ω
0.2
3V
Full
Switch OFF,
See Figure 14
V
nA
−20
−2
20
0.2
2
3.6 V
nA
Full
−20
20
Full
2
5.5
V
Full
0
0.8
V
25°C
−2
Digital Control Input (IN)
Input logic high
Input logic low
Input leakage current
VIH
VIL
IIH, IIL
VI = 5.5 V or 0
Full
3.6 V
−20
0.3
2
20
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
5
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SCDS186 − FEBRUARY 2005
Electrical Characteristics for 3.3-V Supply(1) (continued)
V+ = 3 V to 3.6 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
2
5
10
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
3.3 V
tON
Full
3 V to 3.6 V
1.5
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
3.3 V
6.5
tOFF
Full
3 V to 3.6 V
CL = 1 nF,
See Figure 20
25°C
3.3 V
1
pC
See Figure 16
25°C
3.3 V
19
pF
11
9
4
ns
12
13
ns
Charge injection
QC
NO
OFF capacitance
CNO(OFF)
VGEN = 0,
RGEN = 0,
VNO = V+ or GND,
Switch OFF,
COM
OFF capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
3.3 V
18
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
36
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
3.3 V
36
pF
VI = V+ or GND,
See Figure 16
25°C
3.3 V
2
pF
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
3.3 V
200
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 19
25°C
3.3 V
−64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
3.3 V
0.01
%
Digital input
capacitance
Bandwidth
CI
Supply
25°C
Positive supply
I+
VI = V+ or GND,
Switch ON or OFF
3.6 V
current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
6
0.01
0.1
0.25
µA
A
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SCDS186 − FEBRUARY 2005
Electrical Characteristics for 2.5-V Supply(1)
V+ = 2.3 V to 2.7 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
1.4
V+
2.2
UNIT
Analog Switch
Analog signal range
VCOM, VNO
0
Peak ON resistance
rpeak
0 ≤ VNO ≤ V+,
ICOM = −8 mA,
Switch ON,
See Figure 13
25 °C
ron
VNO = 1.8 V,
ICOM = −8 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
ON-state resistance
flatness
ron(flat)
0 ≤ VNO ≤ V+,
ICOM = −8 mA
VNO = 0.8 V, 1.8 V,
ICOM = −8 mA
Full
Full
2.4
1.2
2.3 V
25°C
VCOM = 0.5 V, VNO = 2.3 V,
or
COM
VCOM = 0.5 V, VNO = 2.3 V Switch OFF,
OFF leakage current
See Figure 14
VCOM = 0 to 2.7 V,
ICOM(PWROFF)
VNO = 2.7 V to 0
25°C
ICOM(OFF)
0.2
0.5
−2
Full
0.5
2
−1
0V
20
0.1
−5
−2
1
5
0.5
Full
VNO = 0.5 V, VCOM = Open,
Switch ON,
or
See Figure 15
VNO = 2.3 V, VCOM = Open,
25°C
INO(ON)
COM
ON leakage current
VCOM = 0.5 V, VNO = Open,
Switch ON,
or
See Figure 15
VCOM = 2.3 V, VNO = Open,
25°C
ICOM(ON)
nA
−20
25°C
−1
0V
20
0.1
−5
−2
1
5
0.1
µA
A
2
2.7 V
Full
µA
A
2
2.7 V
NO
ON leakage current
Ω
nA
−20
25°C
Full
Ω
0.5
2.7 V
Full
Ω
0.5
2.3 V
Full
25°C
1.8
2
25°C
Switch ON,
See Figure 13
VNO = 0.5 V, VCOM = 2.3 V,
or
INO(OFF)
VNO = 2.3 V, VCOM = 0.5 V Switch OFF,
See Figure 14
VNO = 0 to 2.7 V,
INO(PWROFF)
VCOM = 2.7 V to 0
NO
OFF leakage current
2.3 V
V
nA
−20
−2
20
0.1
2
2.7 V
nA
Full
−20
20
Full
1.8
5.5
V
Full
0
0.6
V
25°C
−2
Digital Control Input (IN)
Input logic high
Input logic low
Input leakage
current
VIH
VIL
IIH, IIL
VI = 5.5 V or 0
Full
2.7 V
−20
0.3
2
20
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
7
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SCDS186 − FEBRUARY 2005
Electrical Characteristics for 2.5-V Supply(1) (continued)
V+ = 2.3 V to 2.7 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
3
7
MAX
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
2.5 V
tON
Full
2.3 V to 2.7 V
2.5
10
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
2.5 V
6.5
tOFF
Full
2.3 V to 2.7 V
CL = 1 nF,
See Figure 20
25°C
2.5 V
1
pC
See Figure 16
25°C
2.5 V
19
pF
10.5
9.5
5
ns
13
15
ns
Charge injection
QC
NO
OFF capacitance
CNO(OFF)
VGEN = 0,
RGEN = 0,
VNO = V+ or GND,
Switch OFF,
COM
OFF capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
2.5 V
18
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
36.5
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
2.5 V
36.5
pF
VI = V+ or GND,
See Figure 16
25°C
2.5 V
2
pF
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
2.5 V
200
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 19
25°C
2.5 V
−64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
2.5 V
0.02
%
Digital input
capacitance
Bandwidth
CI
Supply
25°C
Positive supply
I+
VI = V+ or GND,
Switch ON or OFF
2.7 V
current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
8
0.01
0.1
0.15
µA
A
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SCDS186 − FEBRUARY 2005
Electrical Characteristics for 1.8-V Supply(1)
V+ = 1.65 V to 1.95 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
3.7
V+
25
UNIT
Analog Switch
Analog signal range
VCOM, VNO
0
Peak ON resistance
rpeak
0 ≤ VNO ≤ V+,
ICOM = −2 mA,
Switch ON,
See Figure 13
25 °C
ron
VNO = 1.5 V,
ICOM = −2 mA,
Switch ON,
See Figure 13
25°C
ON-state resistance
0 ≤ VNO ≤ V+,
ICOM = −2 mA
Switch ON,
See Figure 13
VNO = 0.6 V, 1.5 V,
ICOM = −2 mA
Switch ON,
See Figure 13
25°C
VNO = 0.3 V, VCOM = 1.65 V,
or
INO(OFF)
VNO = 1.65 V, VCOM = 0.3 V Switch OFF,
See Figure 14
VNO = 0 to 1.95 V,
INO(PWROFF)
VCOM = 1.95 V to 0
25°C
VCOM = 0.3 V, VNO = 1.65 V,
or
VCOM = 0.3 V, VNO = 1.65 V Switch OFF,
See Figure 14
VCOM = 0 to 1.95 V,
ICOM(PWROFF)
VNO = 1.95 V to 0
25°C
ON-state resistance
flatness
NO
OFF leakage current
COM
OFF leakage current
ron(flat)
ICOM(OFF)
Full
Full
1.65 V
30
1.5
1.65 V
3.4
3.5
25°C
2
6
−2
Full
0.5
2
−1
0V
20
0.1
−5
−2
1
5
0.5
Full
VNO = 0.3 V, VCOM = Open,
Switch ON,
or
See Figure 15
VNO = 1.65 V, VCOM = Open,
25°C
COM
ON leakage current
VCOM = 0.3 V, VNO = Open,
Switch ON,
or
See Figure 15
VCOM = 1.65 V, VNO = Open,
25°C
ICOM(ON)
nA
−20
25°C
−1
0V
20
0.1
−5
−2
1
5
0.1
µA
A
2
1.95 V
Full
µA
A
2
1.95 V
INO(ON)
Ω
nA
−20
25°C
NO
ON leakage current
Ω
6
1.95 V
Full
Ω
1.5
1.65 V
Full
Full
V
nA
−20
−2
20
0.1
2
1.95 V
nA
Full
−20
20
Full
1.5
5.5
V
Full
0
0.6
V
25°C
−2
Digital Control Input (IN)
Input logic high
Input logic low
Input leakage current
VIH
VIL
IIH, IIL
VI = 5.5 V or 0
Full
1.95 V
−20
0.3
2
20
nA
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
9
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SCDS186 − FEBRUARY 2005
Electrical Characteristics for 1.8-V Supply(1) (continued)
V+ = 1.65 V to 1.95 V, TA = −40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA
V+
MIN
TYP
MAX
5.5
9
19
UNIT
Dynamic
Turn-on time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
1.8 V
tON
Full
1.65 V to 1.95 V
Turn-off time
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 17
25°C
1.8 V
tOFF
Full
1.65 V to 1.95 V
CL = 1 nF,
See Figure 20
25°C
1.8 V
1
pC
See Figure 16
25°C
1.8 V
19
pF
5
7.5
20
12
6
ns
17.5
20
ns
Charge injection
QC
NO
OFF capacitance
CNO(OFF)
VGEN = 0,
RGEN = 0,
VNO = V+ or GND,
Switch OFF,
COM
OFF capacitance
CCOM(OFF)
VCOM = V+ or GND,
Switch OFF,
See Figure 16
25°C
1.8 V
18
pF
NO
ON capacitance
CNO(ON)
VNO = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
37
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 16
25°C
1.8 V
37
pF
VI = V+ or GND,
See Figure 16
25°C
1.8 V
2
pF
BW
RL = 50 Ω,
Switch ON,
See Figure 18
25°C
1.8 V
200
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 1 MHz,
Switch OFF,
See Figure 19
25°C
1.8 V
−64
dB
Total harmonic
distortion
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 21
25°C
1.8 V
0.05
%
Digital input
capacitance
Bandwidth
CI
Supply
25°C
Positive supply
I+
VI = V+ or GND,
Switch ON or OFF
1.95 V
current
Full
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
10
0.01
0.1
0.1
µA
A
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SCDS186 − FEBRUARY 2005
TYPICAL PERFORMANCE
3.5
1.4
3.0
1.2
V+ = 1.8 V
1.0
ron (Ω)
ron (Ω)
2.5
2.0
1.5
V+ = 2.5 V
1.0
TA = 85_C
0.8
V+ = 3.3 V
0.4
V+ = 5 V
0.2
0.5
0.0
TA = −40_C
0.6
TA = 25_C
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
VCOM (V)
1.5
VCOM (V)
2
2.5
3
14
1.0
0.9
TA = 85_C
12
Leakage Current (nA)
TA = 25_C
0.8
0.7
0.6
ron (Ω)
1
Figure 2. ron vs VCOM (V+ = 3 V)
Figure 1. ron vs VCOM (TA = 25°C)
0.5
0.4
TA = −40_C
0.3
0.2
0.1
INO/NC(OFF)
10
8
ICOM(OFF)
6
INO/NC(ON)
4
ICOM(ON)
2
0
−60
0.0
0
0.5
1
1.5
2 2.5
3
VCOM (V)
3.5
4
4.5
−40
−20
0
5
20
40
60
80
100
TA (°C)
Figure 4. Leakage Current vs Temperature
(V+ = 5.5 V)
Figure 3. ron vs VCOM (V+ = 5 V)
2
14
1.5
12
V+ = 3.3 V
tOFF
10
tON/tOFF (ns)
1
QC (pC)
0.5
V+ = 5 V
0.5
0
−0.5
tON
8
6
4
2
0
−1
0
0.5
1
1.5 2
2.5 3
3.5 4
4.5
5
5.5
Bias Voltage (V)
Figure 5. Charge Injection (QC) vs Bias Voltage
0
1
2
3
4
5
6
V+ (V)
Figure 6. tON and tOFF vs V+
11
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SCDS186 − FEBRUARY 2005
TYPICAL PERFORMANCE
3.0
12
2.5
10
Logic Threshold (V)
tON/tOFF (ns)
tOFF
8
6
tON
4
2
2.0
VIH
1.5
VIL
1.0
0.5
0
−60
−40
−20
0
20
40
60
80
0.0
100
0
1
2
TA (°C)
5
6
Figure 8. Logic Threshold vs V+
0
0
−1
−10
−20
Attenuation (dB)
−2
Gain (dB)
4
V+ (V)
Figure 7. tON and tOFF vs Temperature (V+ = 5 V)
−3
−4
−5
−6
−30
−40
−50
−60
−70
−7
−80
−8
0.1
1
10
100
1000
−90
0.1
1
Frequency (MHz)
10
Frequency (MHz)
100
1000
Figure 10. OFF Isolation vs Frequency
(V+ = 5 V)
Figure 9. Gain vs Frequency (V+ = 5 V)
0.009
60
V+ = 3.3 V
0.008
50
0.007
0.006
40
I+ (nA)
0.005
THD (%)
3
V+ = 5 V
0.004
0.003
30
20
0.002
10
0.001
0.000
0
10
100
1000
Frequency (Hz)
10000
100000
Figure 11. Total Harmonic Distortion vs
Frequency (V+ = 5 V)
12
0
−60
−40
−20
0
20
40
60
80
TA (°C)
Figure 12. Power-Supply Current vs
Temperature (V+ = 5 V)
100
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SCDS186 − FEBRUARY 2005
PIN DESCRIPTION
PIN
NUMBER
NAME
1
NO
2
COM
Common
3
GND
Digital ground
DESCRIPTION
Normally open
4
IN
Digital control pin to connect COM to NO
5
V+
Power supply
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNO
Voltage at NO
ron
Resistance between COM and NO ports when the channel is ON
rpeak
ron(flat)
Peak on-state resistance over a specified voltage range
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under
worst-case input and output conditions
INO(PWROFF)
Leakage current measured at the NO port during the power-down condition, V+ = 0
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state under
worst-case input and output conditions
ICOM(PWROFF)
Leakage current measured at the COM port during the power-down condition, V+ = 0
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output
(NO) open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Maximum input voltage for logic low for the control input (IN)
VI
Voltage at the control input (IN)
IIH, IIL
Leakage current measured at the control input (IN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ∆VCOM, CL is the load capacitance, and ∆VCOM is the change in analog output voltage.
CNO(OFF)
CCOM(OFF)
Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CNO(ON)
CCOM(ON)
Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CI
Capacitance of control input (IN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NO to COM) in the OFF state.
BW
Bandwidth of the switch. This is the frequency at which the gain of an ON channel is −3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
Capacitance at the COM port when the corresponding channel (COM to NO) is ON
13
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SCDS186 − FEBRUARY 2005
PARAMETER MEASUREMENT INFORMATION
V+
VNO NO
COM
+
VCOM
Channel ON
r on +
VI
ICOM
IN
VCOM * VNO
W
I COM
VI = VIH or VIL
+
GND
Figure 13. ON-State Resistance (ron)
V+
VNO NO
COM
+
VI
VCOM
+
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
GND
Figure 14. OFF-State Leakage Current (ICOM(OFF), INO(OFF), ICOM(PWROFF), INO(PWROFF))
V+
VNO NO
COM
+
VI
VCOM
ON-State Leakage Current
Channel ON
VI = VIH or VIL
IN
+
GND
Figure 15. ON-State Leakage Current (ICOM(ON), INO(ON))
14
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SCDS186 − FEBRUARY 2005
V+
VNO
NO
Capacitance
Meter
VBIAS = V+ or GND
VI = VIH or VIL
VCOM COM
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
VBIAS
VI
IN
GND
Figure 16. Capacitance (CI, CCOM(OFF), CCOM(ON), CNO(OFF), CNO(ON))
V+
NO
VCOM
VI
TEST
RL
CL
VCOM
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
VNO
COM
CL(2)
RL
IN
Logic
Input(1)
V+
Logic
Input
(VI)
GND
50%
50%
0
tON
tOFF
Switch
Output
(VNO)
90%
90%
(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
(2) CL includes probe and jig capacitance.
Figure 17. Turn-On (tON) and Turn-Off Time (tOFF)
V+
Network Analyzer
50 W
VNO
NO
Channel ON: NO to COM
COM
VCOM
Source
Signal
VI = V+ or GND
Network Analyzer Setup
50 W
VI
+
IN
Source Power = 0 dBm
(632-mV P-P at 50-W load)
GND
DC Bias = 350 mV
Figure 18. Bandwidth (BW)
15
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SCDS186 − FEBRUARY 2005
V+
Network Analyzer
Channel OFF: NO to COM
50 W
VNO NO
VI = V+ or GND
VCOM
COM
Source
Signal
50 W
Network Analyzer Setup
VI
50 W
Source Power = 0 dBm
(632-mV P-P at 50-W load)
IN
+
GND
DC Bias = 350 mV
Figure 19. OFF Isolation (OISO)
V+
RGEN
Logic
Input
(VI)
VIH
OFF
ON
OFF V
IL
NO
COM
+
VCOM
∆VCOM
VCOM
VGEN
CL(1)
VI
VGEN = 0 to V+
RGEN = 0
CL = 1 nF
QC = CL × ∆VCOM
VI = VIH or VIL
IN
Logic
Input(2)
GND
(1) CL includes probe and jig capacitance.
(2) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
Figure 20. Charge Injection (QC)
VI = VIH or VIL
RL = 600 Ω
fSOURCE = 20 Hz to 20 kHz CL = 50 pF
Channel ON: COM to NO
VSOURCE = V+ P-P
V+/2
Audio Analyzer
NO
Source
Signal
COM
CL(1)
600 W
VI
600 W
IN
GND
−V+/2
(1) CL includes probe and jig capacitance.
Figure 21. Total Harmonic Distortion (THD)
16
PACKAGE OPTION ADDENDUM
www.ti.com
18-Jul-2006
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
TS5A3166DBVR
ACTIVE
SOT-23
DBV
5
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3166DBVRE4
ACTIVE
SOT-23
DBV
5
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3166DCKR
ACTIVE
SC70
DCK
5
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3166DCKRE4
ACTIVE
SC70
DCK
5
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS5A3166YZPR
ACTIVE
WCSP
YZP
5
3000 Green (RoHS &
no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
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