Frontier Electronics Corp. 667 E. COCHRAN STREET, SIMI VALLEY, CA 93065 TEL: (805) 522-9998 FAX: (805) 522-9989 E-mail: [email protected] Web: http://www.frontierusa.com SUPER SWITCHING CHIP DIODE SSD355 2.0±0.2 FEATURES z SUPER SWITCHING z CHIP DIODE SIZE z LOW STORED CHARGE CATHODE MARK R:0.3 MECHANICAL DATA z CASE: SOD-323, MINI MELF, DIMENSIONS IN MILLIMETERS z TERMINALS: SOLDERABLE PER MIL-STD 750 METHOD 2026 z POLARITY: CATHODE INDICATED BY COLOR BAND CATHODE ELECTRODE 1.2±0.2 ANODE ELECTRODE Recommended Land Pattern Dimensions 1.2±0.1 2.1 0.9±0.2 1.25 0.9 RATINGS SYMBOL SSD355 UNITS VR 100 V IO 100 mA SURGE FORWARD CURRENT AT T＜1 s AND TJ＝25℃ IFSM 500 mA POWER DISSIPATION AT Tamb=25℃ CONTINUOUS REVERSE VOLTAGE RECTIFIED CURRENT（AVERAGE） HALF WAVE RECTIFICATION WITH RESIST LOAD AT Tamb＝25℃ AND f ≧ 50HZ （NOTE 1） PTOT 350 mW JUNCTION TEMPERATURE TJ 175 ℃ STORAGE TEMPERATURE RANGE TS - 55 TO + 175 ℃ SYMBOL MIN TYP MAX UNITS VF - - 1 V AT VR=25V IR - - 30 nA AT VR=80V IR - - 0.1 μA VR 100 - - V CAPACITANCE AT VF=VR=0 , f = 1.0 MHz CD - - 1.5 PF REVERSE RECOVERY TIME TRR - - 4 nS RTHA - - 0.35 K / mW CHARACTERISTICS TJ=25℃ FORWARD VOLTAGE AT IF=100mA LEAKAGE CURRENT REVERSE BREAKDOWN VOLTAGE TESTED WITH 100μA PULSES FROM IF=10mA TO IR=1mA VR=6V RL=100Ω THERMAL RESISTANCE JUNCTION TO AMBIENT AIR（NOTE 1） NOTE: 1. LEADS KEPT AT AMBIENT TEMP. SSD355 Page: 1 RATINGS AND CHARACTERISTIC CURVE SSD355 Fig. 1-REVERSE CHARACTERISTICS Fig. 2-FORWARD CHARACTERISTICS 120 1000 Scattering Limit 100 100 IF(mA) IR (nA) 80 60 10 40 1.0 20 Scattering Limit 0 0.1 10 20 30 50 70 100 0 Typical Leakage Current Versus Reverse Voltage , VR (V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Typical Forward Current Versus Forward Voltage , VF (V) Fig. 4-DERATING CURVE ODES CAPACITANCE 600 1.2 f=1MHZ Tj=25 oC 500 0.8 400 PD (mW) 1.0 0.6 CD (pF) 0.2 300 0.4 200 0.2 100 0 0 0 2 4 6 8 10 Typical Diodes Capacitance Versus Reverse Voltage , VR(V) SSD355 0 100 200 Power Dissipation Versus Ambient Temperature Ta (oC) Page: 2