MBR1030 thru MBR10100 星合电子 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes TO-220AC FEATURES ●Metal of silicon rectifier , majority carrier conduction .108 (2.75) ●Guard ring for transient protection .187(4.7) .148(3.8) .055(1.4) .047(1.2) .153(3.9) .146(3.7) .413(10.5) .374(9.5) ●Low power loss,high efficiency ●High current capability,low VF .270(6.9) .230(5.8) ●High surge capacity ●Plastic package has UL flammability .610(15.5) .583(14.8) classification 94V-0 ●For use in low voltage,high frequency inverters,free .04 MAX (1.0) wheeling,and polarity protection applications MECHANICAL DATA .157 .583(14.8) (4.0) .531(13.5) .051 (1.3) ●Case: TO-220AC molded plastic .043(1.1) .032(0.8) ●Polarity: As marked on the body ●Weight: 0.08ounces,2.24 grams .024(0.6) .012(0.3) .102(2.6) .091(2.3) ●Mounting position :Any .126 (3.2) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS SYMBOL MBR1030 MBR1040 MBR1050 MBR1060 MBR1080 MBR10100 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 30 40 50 60 80 100 V Maximum RMS Voltage VRMS 21 28 35 42 56 70 V VDC 30 40 50 60 80 100 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current ( See Fig.1) I(AV) 10.0 A IFSM 150 A Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load (JEDEC Method) Peak Forward Voltage (Note1) IF=10A @TJ=25℃ 0.70 0.80 0.85 IF=10A @TJ=125℃ 0.57 0.70 0.71 0.84 0.95 - 0.72 0.85 - 0.1 0.1 0.1 15 10 6.0 VF IF=20A @TJ=25℃ IF=20A @TJ=125℃ Maximum DC Reverse Current @TJ=25℃ at Rated DC Bolcking Voltage @TJ=125℃ IR Typical Junction Capacitance (Note2) Typical Thermal Resistance (Note3) Operating Temperature Range Storage Temperature Range V mA CJ 400 1100 pF RθJC 2.5 2.0 ℃/W TJ -55 to +150 ℃ TSTG -55 to +175 ℃ NOTES:1.300us pulse width,2% duty cycle. 2.Measured at 1.0 MHZ and applied reverse voltage of 4.0V DC. 3.Thermal resistance junction to case. 1 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ MBR1030 thru MBR10100 星合电子 ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳ REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 10.0 Amperes FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT 10.0 8.0 MBR1080 MBR10100 6.0 4.0 MBR1030 MBR1060 2.0 0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG. 1 – FORWARD CURRENT DERATING CURVE 300 250 PULSE WIDTH 8.3 ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) 200 150 100 50 0 1 2 CASE TEMPERATURE (℃) 100 FIG.4-TYPICAL FORWARD CHARACTERISTICS FIG.3-TYPICAL REVER CHARACTERISTICS 100 1000 MBR1030 - MBR1060 MBR1080 - MBR10100 100 10 INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT(mA) 10 20 50 5 NUMBER OF CYCLES AT 60Hz T J=125℃ 1.0 T J=75℃ 0.1 T J=25℃ 0.01 0 20 40 60 80 100 120 140 MBR1030 - MBR1040 10 MBR1050 - MBR1060 MBR1080 - MBR10100 1.0 T J = 25°C PULSE WIDTH 300us 2% DUTY CYCLE 0.1 0.1 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) 0.2 0.3 0.4 0.5 0.6 0.7 10000 CAPACITANCE, (pF) MBR1080 - MBR10100 1000 MBR1030 - MBR1060 T J = 25°C f = 1 MHz 0.1 0.9 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5 – TYPICAL JUNCTION CAPACITANCE 100 0.8 1 4 10 REVERSE VOLTAGE ,VOLTS 100 2 ＧＡＯＭＩ ＸＩＮＧＨＥ ＥＬＥＣＴＲＯＮＩＣＳＣＯ．，ＬＴＤ． ＷＷＷ．ＳＤＤＺＧ．ＣＯＭ ＴＥＬ：０５３６－２２１０３５９ ＱＱ：４６４７６８０１７ 1.0