HITTITE HMC173MS8_01

HMC173MS8
v01.0801
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.8 - 2.0 GHz
ATTENUATORS - SMT
9
Typical Applications
Features
The HMC173MS8 is ideal for 0.8 - 2.0 GHz
Applications:
Single Positive Voltage Control: 0 to +3V
• Base Station Infrastructure
High P1dB Compression Point: +16 dBm
• Portable Wireless
Ultra Small Package: MSOP
Functional Diagram
General Description
High Attenuation Range: >50 dB @ 0.9 GHz
The HMC173MS8 is an absorptive voltage variable attenuator in an 8-lead MSOP package. The
device operates with a positive supply voltage and a
positive control voltage. Unique features include a
high dynamic attenuation range and excellent power
handling performance through all attenuation states.
The HMC173MS8 is ideal for operation in wireless
applications between 0.8 GHz and 1.6 GHz. 1.7 to
2.0 GHz operation is possible, with a reduced maximum attenuation of 30 dB and increased VSWR.
The HMC173MS8 can be used with an external
driver circuit for improved linearity of attenuation.
Electrical Specifications, TA = +25° C, Vdd = +4.0 Vdc, 50 Ohm System
Parameter
Insertion Loss (Min. Atten.)
(VCTL = 0.0 Vdc)
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
Attenuation Range
(VCTL = 0 to +3 V)
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
Flatness
(Peak to Peak)
0.8 - 1.0 GHz
1.0 - 1.6 GHz
Return Loss
(VCTL = 0 to +3 V)
0.8 - 1.0 GHz
1.0 - 1.6 GHz
1.6 - 2.0 GHz
45
27
25
6
5
5
Typ.
Max.
Units
1.8
2.6
3.2
2.3
3.1
3.7
dB
dB
dB
52
32
30
dB
dB
dB
±0.15
±0.25
dB
dB
12
8
7
dB
dB
dB
19
9
dBm
dBm
Input Power for 0.1 dB Compression
(.825 GHz)
Min Atten.
Atten. >2.0
Input Power for 1.0 dB Compression
(.825 GHz)
Min Atten.
Atten. >2.0
21
10
25
16
dBm
dBm
Input Third Order Intercept
.825 GHz, Two-tone Input Power = +5.0 dBm Each Tone
Min Atten.
Atten. >2.0
30
15
37
21
dBm
dBm
1.0
1.2
μS
μS
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
9-2
Min.
0.8 - 2.0 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
HMC173MS8
v01.0801
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.8 - 2.0 GHz
Attenuation vs. Control Voltage
@ 0.9 and 1.9 GHz
Input IP3 vs.
Control Voltage @ .825 GHz
40
ATTENUATION (dB)
-10
-20
1.9 GHz
-30
-40
0.9 GHz
-50
35
25
+85C
20
+25C
15
10
-60
0
0.5
1
1.5
2
2.5
0
3
0.5
1
1.5
2
2.5
3
CONTROL VOLTAGE (V)
CONTROL VOLTAGE (V)
Input P1dB
Compression@ .825 GHz
Attenuation vs. Temperature
Normalized to +25˚C @ .825 GHz
NORMALIZED ATTENUATION (dB)
9
-40C
30
10
Input Power for 1 dB Compression Point
8
6
4
2
-40C
0
-2
+85C
-4
-6
-8
-10
0
0.5
1
1.5
2
2.5
Test Condidition
(.825 GHz)
VCTL
(Vdc)
Vdd
(Vdc)
+25C
+85C
-40C
Units
Min. Attenuation
0.0
+4.0
26
24
25
dBm
Max. Attenuation
+3.0
+4.0
16.5
15
23
dBm
Worst Case
P1dB @
Typical VCTL
+1.8
+4.0
16.5
15.5
14
dBm
ATTENUATORS - SMT
825 MHz INPUT IP3 (dBm)
0
3
CONTROL VOLTAGE (V)
Broadband Return Loss
vs. Control Voltage
0
-10
-1
-20
-2
-30
-3
-40
-4
-50
-5
-60
-6
-7
-70
0.6
0.8
1
1.2
1.4
FREQUENCY (GHz)
1.6
1.8
2
0
RETURN LOSS (dB)
0
INSERTION LOSS (dB)
ATTENUATION (dB)
Broadband Attenuation
and Insertion Loss
-5
0V
-10
2V
2.25V
-15
3V
-20
0.6
0.8
1
1.2
1.4
1.6
1.8
2
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
9-3
HMC173MS8
v01.0801
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.8 - 2.0 GHz
Typical Performance for 0.8 - 1.0 GHz Applications
9
Return Loss vs.
Control Voltage @ .825 GHz
Attenuation vs.
Control Voltage @ .825 GHz
0
0
-2
-40C
+85C
-20
RETURN LOSS (dB)
ATTENUATION (dB)
ATTENUATORS - SMT
-10
-30
-40
+25C
-50
-40C and +85C
-8
-10
-12
-14
-16
+25C
-18
-20
-60
0
0.5
1
1.5
2
2.5
3
0
0.5
CONTROL VOLTAGE (V)
1
1.5
2
2.5
3
CONTROL VOLTAGE (V)
Typical Performance for 1.8 - 1.9 GHz Applications
Return Loss vs.
Control Voltage @ 1.9 GHz
Attenuation vs.
Control Voltage @ 1.9 GHz
0
0
-2
-10
+85C
-40C
-15
RETURN LOSS (dB)
ATTENUATION (dB)
-5
-20
-25
+25C
-30
-35
0
0.5
1
1.5
2
CONTROL VOLTAGE (V)
9-4
-4
-6
2.5
3
-4
-6
+85C
-8
-40C
-10
-12
-14
+25C
-16
-18
-20
0
0.5
1
1.5
2
CONTROL VOLTAGE (V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
2.5
3
HMC173MS8
v01.0801
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.8 - 2.0 GHz
Absolute Maximum Ratings
Control and Bias Voltage
VCTL
-0.2 Vdc to Vdd
VCTL
0 to +3 Vdc @ -100 μA to +100 μA
Vdd
+8 Vdc
Vdd
+4.0 Vdc +/- 0.1 Vdc @ +100 μA
Maximum Input Power
Vdd = +4.0 Vdc
+29 dBm
+21 dBm
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
9
*Note: DC blocking capacitors are required for each RF port.
Capacitor value determines lowest frequency of operation.
Outline Drawing
ATTENUATORS - SMT
Min. Attenuation
Atten. >2 dB
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
9-5
HMC173MS8
v01.0801
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.8 - 2.0 GHz
Attenuation Linearizing Control Circuit
For The HMC173MS8 Voltage Variable Attenuator
ATTENUATORS - SMT
9
A driver circuit to improve the attenuation linearity of the HMC173MS8 can be implemented with a simple op-amp configuration. A breakpoint linearization circuit will scale the voltage supplied to the control line of the HMC173MS8, so that
a more linear attenuation vs. control voltage slope can be achieved. A -5V and +5V supply is required.
Diode and resistor values which define the op-amp gain, and breakpoint were selected to optimize a measured production lot of attenuators at .825 GHz. R7 may be varied to optimize the performance of any given attenuator. If the input
voltage to the linearizing circuit will not drop below 1.0V, the R9 and D2 may be omitted, and this will greatly reduce the
overall power consumption of the driver circuit.
The linearizing circuit has been optimized for .825 GHz attenuation applicaitons. A similar approach may be used at
other frequencies by adjusting R1 - R9 resistor values.
Required Parts List
Application Circuit
Part
Description
Manufacturer
AD822
Op-Amp
Analog Devices
R1
10K ohms
Panasonic
R2
200K ohms
Panasonic
R3
7.5K ohms
Panasonic
R4
39K ohms
Panasonic
R5
220K ohms
Panasonic
R6
91K ohms
Panasonic
R7
910 ohms
Panasonic
R8
51 ohms
Panasonic
R9
100 ohms
Panasonic
D1, D2
LL4148 D-35
Digi-Key
Return Loss vs.
Control Voltage @ .825 GHz
Attenuation vs.
Control Voltage @ .825 GHz
-12
0
-10
-14
ATTENUATION (dB)
RETURN LOSS (dB)
-13
Without
Linearizer
-15
-16
With
Linearizer
-17
With
Linearizer
-30
-40
-50
-18
-19
-60
0.5
1
1.5
2
CONTROL VOLTAGE (Vdc)
9-6
Without
Linearizer
-20
2.5
3
0
1
2
CONTROL VOLTAGE (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
3
HMC173MS8
v01.0801
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.8 - 2.0 GHz
Evaluation Circuit Board
The circuit board used in the final application should use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground leads should be connected directly to the ground plane
similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground
planes. The evaluation circuit board as shown is available from Hittite Microwave Corporation upon request.
ATTENUATORS - SMT
9
Evaluation Circuit Board Layout Design Details
Layout Technique
Grounded Co-Planar Waveguide (GCPW)
Material
FR4
Dielectric Thickness
0.028” (0.71 mm)
50 Ohm Line Width
0.037” (0.94 mm)
Gap to Ground Edge
0.010” (0.25 mm)
Ground VIA Hole Diameter
0.014” (0.36 mm)
Connectors
SMA-F (EF - Johnson P/N 142-0701-806)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
9-7