HMC7229LS6 v00.0513 AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Typical Applications Features The HMC7229LS6 is ideal for: P1dB Output Power: 31.5 dBm • Point-to-Point Radios Saturated Output Power: +32 dBm • Point-to-Multi-Point Radios High Output IP3: 40 dBm • VSAT & SATCOM High Gain: 24 dB • Military & Space DC Power Supply: 6V @ 1200 mA 50 Ohm Matched Input/Output 16 Lead 6x6 mm SMT Package: 36 mm2 Functional Diagram General Description The HMC7229LS6 is a four-stage GaAs pHEMT MMIC 1 Watt Power Amplifier which operates between 37 and 40 GHz. The HMC7229LS6 provides 24 dB of gain, +32 dBm of saturated output power, and 18% PAE from a +6V supply. With an excellent OIP3 of +40 dBm, the HMC7229LS6 is ideal for high linearity applications in military and space as well as point-to-point and point-to-multi-point radios. The RF I/Os are internally matched and DC blocked for ease of integration into higher level assemblies. The HMC7229LS6 is housed in a ceramic air cavity package which exhibits low thermal resistance and is compatible with surface mount manufacturing techniques. Electrical Specifications TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = +6V, Idd = 1200 mA [1] Parameter Min. Frequency Range Typ. 37 - 40 Gain 21 Max. Units GHz 24 dB 0.058 dB/°C Input Return Loss 16 dB Output Return Loss 14 dB 31.5 dBm 32 dBm 40 dBm 1200 mA Gain Variation over Temperature 28.5 Output Power for P1dB Compression Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] Total Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd = 1200mA typical [2] Measurement taken at Pout / tone = +20dBm. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC7229LS6 v00.0513 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz 30 20 28 10 26 0 24 -10 22 -20 20 18 -30 35 36 37 38 39 40 41 37 42 38 S21 S11 +25 C S22 40 -5 -10 -10 -20 -30 +85 C -40 C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -15 -20 -25 -40 37 38 39 37 40 38 +25 C +85 C 39 40 FREQUENCY (GHz) FREQUENCY (GHz) -40 C +25 C +85 C -40 C P1dB vs. Supply Voltage P1dB vs. Temperature 34 34 32 32 P1dB (dBm) P1dB (dBm) 39 FREQUENCY (GHz) FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - SMT Gain vs. Temperature 30 GAIN (dB) RESPONSE (dB) Gain & Return Loss 30 28 30 28 26 26 37 38 39 40 37 38 FREQUENCY (GHz) +25 C +85 C 39 40 FREQUENCY (GHz) -40 C 5V 5.5V 6V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC7229LS6 v00.0513 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Psat vs. Supply Voltage 34 32 32 Psat (dBm) Psat (dBm) 34 30 30 28 28 26 26 37 38 39 37 40 38 +25 C +85 C 5V -40 C 34 32 32 Psat (dBm) 34 30 5.5V 6V 30 28 28 26 26 37 38 39 37 40 38 800 mA 1000 mA 39 40 FREQUENCY (GHz) FREQUENCY (GHz) 1200 mA 800 mA 1000 mA 1200 mA Output IP3 vs. Supply Current, Pout/tone = +20 dBm 42 42 40 40 IP3 (dBm) IP3 (dBm) 40 Psat vs. Supply Current P1dB vs. Supply Current Output IP3 vs. Temperature, Pout/tone = +20 dBm 38 38 36 36 34 34 37 38 39 40 37 38 +25 C +85 C 39 40 FREQUENCY (GHz) FREQUENCY (GHz) 3 39 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) AMPLIFIERS - LINEAR & POWER - SMT Psat vs. Temperature -40 C 800 mA 1000 mA 1200 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC7229LS6 v00.0513 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Output IP3 vs. Supply Voltage, Pout/tone = +20 dBm Output IM3 @ Vdd = +5V 42 60 IM3 (dBc) 40 IP3 (dBm) AMPLIFIERS - LINEAR & POWER - SMT 70 38 50 40 36 30 34 20 37 38 39 40 10 12 14 16 FREQUENCY (GHz) 5V 5.5V 22 24 39 GHz 40 GHz Output IM3 @ Vdd = +6V 70 70 60 60 IM3 (dBc) IM3 (dBc) 20 37 GHz 38 GHz 6V Output IM3 @ Vdd = +5.5V 50 40 30 50 40 30 20 20 10 12 14 16 18 20 22 24 10 12 14 16 Pout/TONE (dBm) 18 20 22 24 Pout/TONE (dBm) 37 GHz 38 GHz 39 GHz 40 GHz 37 GHz 38 GHz Power Compression @ 38 GHz 39 GHz 40 GHz Power Compression @ 39 GHz 35 1950 30 1800 30 1800 25 1650 25 1650 20 1500 20 1500 15 1350 15 1350 10 1200 10 1200 5 1050 5 1050 900 0 -15 -12 -9 -6 -3 0 3 6 9 12 Pout(dBm), GAIN(dB), PAE(%) 1950 900 0 -15 -12 -9 INPUT POWER (dBm) Pout Gain Idd Idd (mA) 35 Idd (mA) Pout(dBm), GAIN(dB), PAE(%) 18 Pout/TONE (dBm) -6 -3 0 3 6 9 12 INPUT POWER (dBm) PAE Pout Gain PAE Idd For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC7229LS6 v00.0513 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Gain & Power vs. Supply Current @ 38.5 GHz Reverse Isolation vs. Temperature GAIN (dB), P1dB (dBm), Psat (dBm) 35 ISOLATION (dB) -50 -60 -70 -80 37 38 39 30 25 20 800 40 900 1000 FREQUENCY (GHz) +25 C 1100 1200 Idd (mA) +85 C -40 C GAIN Gain & Power vs. Supply Voltage @ 38.5 GHz P1dB Psat Power Dissipation 10 POWER DISSIPATION (W) 35 GAIN (dB), P1dB (dBm, Psat (dBm) AMPLIFIERS - LINEAR & POWER - SMT -40 30 25 20 5 5.5 9 8 7 6 5 -15 6 -12 -9 Vdd (V) GAIN -6 -3 0 3 6 9 12 INPUT POWER (dBm) P1dB Psat 37 GHz 38 GHz 39 GHz 40 GHz Detector Voltage vs. Temperature @ 38.5 GHz 10 Vref-Vdet (V) 1 0.1 0.01 0.001 0.0001 -20 -10 0 10 20 30 OUTPUT POWER (dBm) +25 C 5 +85 C - 40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC7229LS6 v00.0513 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Drain Bias Voltage (Vdd) +7V RF Input Power (RFIN) +21 dBm Channel Temperature Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +5 1200 175 °C +5.5 1200 Continuous Pdiss (T= 85 °C) (derate 95 mW/°C above 85 °C) 9.0 W +6 1200 Thermal Resistance (channel to ground paddle) 10 °C/W Operating Temperature -65°C to +150°C Storage Temperature -40°C to 85°C ESD Sensitivity (HBM) Class 0, Passed 150V Adjust Vgg1 to achieve Idd = 1200 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LINEAR & POWER - SMT Absolute Maximum Ratings NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1] HMC7229LS6 ALUMINA WHITE Gold over Nickel N/A [3] H7229 XXXX [1] 4-Digit lot number XXXX. [2] Max peak reflow temperature of 260 °C. [3] Not Applicable to air cavity packages. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC7229LS6 v00.0513 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz Pin Descriptions AMPLIFIERS - LINEAR & POWER - SMT Pin Number 7 1, 2, 10, 11 Function Description Pin Schematic Vdd1, Vdd3, Vdd4, Drain bias voltage. External bypass capacitors of Vdd2 100 pF, 10 nF and 4.7 µF are required for each pin. 3, 9 Vgg1, Vgg2 Gate control for PA. Adjust Vgg to achieve recommended bias current. External bypass caps 100 pF, 10 nF and 4.7 µF are required. Apply Vgg bias to either pin 3 or pin 9. 4, 8 N/C These pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 5, 7, 13, 15 GND These pins and the exposed ground paddle must be connected to RF/DC ground. 6 RF IN This pin is AC coupled and matched to 50 Ohms. 16 Vref DC voltage of diode biased through external resistor used for temperature compensation of Vdet. See application circuit. 12 Vdet DC voltage representing RF output power rectified by diode which is biased through an external resistor. See application circuit. 14 RF OUT This pin is AC coupled and matched to 50 Ohms. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC7229LS6 v00.0513 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz AMPLIFIERS - LINEAR & POWER - SMT Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8 HMC7229LS6 v00.0513 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz AMPLIFIERS - LINEAR & POWER - SMT Evaluation PCB J2 OUT R2 C18 C6 C12 C7 C1 + J6 VDET C3 C10 C9 + C15 600-00812-00-1 C16 GND C11 C5 C17 U1 C4 C8 C2 C14 VD3 VG1 VD5 VD2 + THRU CAL C13 + VREF GND GND GND + VD6 VD1 + J5 R1 VD4 GND VG2 IN J1 List of Materials for Evaluation PCB EV1HMC7229LS6 Item Description J1 - J2 “K” Connector, SRI J5 - J6 DC Pin C1 - C6 100 pF Capacitor, 0402 Pkg. C7 - C12 10000 pF Capacitor, 0603 Pkg.. C13 - C18 4.7 uF Capacitor, Case A Pkg. R1 - R2 40.2K Ohm Resistor, 0402 Pkg. U1 HMC7229LS6 Amplifier PCB [2] 600-00812-00 Evaluation Board [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC7229LS6 v00.0513 GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER With Power Detector, 37 - 40 GHz AMPLIFIERS - LINEAR & POWER - SMT Notes For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10