HI-SINCERITY Spec. No. : MOS200612 Issued Date : 2006.07.01 Revised Date : 2006.07.11 Page No. : 1/4 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol 3 P-Channel Enhancement-Mode MOSFET (-20V, -2.2A) 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain Source Features Gate • RDS(on)<100mΩ@VGS=-4.5V, ID=-2.8A Drain • RDS(on)<150mΩ@VGS=-2.5V, ID=-2A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Improved Shoot-Through FOM Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V -2.2 A ID IDM PD Drain Current (Continuous) Drain Current (Pulsed) *1 -8 A o 0.9 W o 0.57 W -55 to +150 °C 140 °C/W Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75 C Tj, Tstg RθJA Operating Junction and Storage Temperature Range *2 Thermal Resistance Junction to Ambient (PCB mounted) *1: Repetitive Rating: Pulse width limited by the maximum junction temperation. *2: 1-in2 2oz Cu PCB board H2301N HSMC Product Specification HI-SINCERITY Spec. No. : MOS200612 Issued Date : 2006.07.01 Revised Date : 2006.07.11 Page No. : 2/4 MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit VGS=0V, ID=-250uA -20 - - V VGS=-4.5V, ID=-2.8A - 69 100 VGS=-2.5V, ID=-2A - 83 150 • Static BVDSS Drain-Source Breakdown Voltage RDS(on) Drain-Source On-State Resistance VGS(th) mΩ Gate Threshold Voltage VDS=VGS, ID=-250uA -0.45 - -0.95 V IDSS Zero Gate Voltage Drain Current VDS=-9.6V, VGS=0V - - -1 uA IGSS Gate-Body Leakage Current VGS=±8V, VDS=0V - - ±100 nA gFS Forward Transconductance VDS=-5V, ID=-4A - 6.5 - S - 15.23 - - 5.49 - • Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 2.74 - Ciss Input Capacitance - 882.51 - Coss Output Capacitance - 145.54 - Crss Reverse Transfer Capacitance - 97.26 - td(on) Turn-on Delay Time - 17.28 - tr Turn-on Rise Time VDD=-6V, RL=6Ω, ID=-1A, - 3.73 - td(off) Turn-off Delay Time VGEN=-4.5V, RG=6Ω - 36.05 - - 6.19 - - - -2.4 A - -0.8 -1.2 V tf VDS=-6V, ID=-2.8A, VGS=-4.5V VDS=-6V, VGS=0V, f=1MHz Turn-off Fall Time nC PF nS • Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=-0.75A Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% H2301N HSMC Product Specification HI-SINCERITY Spec. No. : MOS200612 Issued Date : 2006.07.01 Revised Date : 2006.07.11 Page No. : 3/4 MICROELECTRONICS CORP. SOT-23 Dimension DIM A B C D G H J K L S V Marking: A L 2 3 0 1 Pb Free Mark 3 Pb-Free: " " (Note) Normal: None B S 1 Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. 2 G V Pin Style: 1.Gate 2.Source 3.Drain Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 C D H K Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm J 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H2301N HSMC Product Specification HI-SINCERITY Spec. No. : MOS200612 Issued Date : 2006.07.01 Revised Date : 2006.07.11 Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time Pb devices. 245 C ±5 C 10sec ±1sec Pb-Free devices. 260 C ±5 C 10sec ±1sec Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o 60~150 sec 240 C +0/-5 C Peak Temperature (TP) o 3. Flow (wave) soldering (solder dipping) Products H2301N o o o o HSMC Product Specification