HI-SINCERITY Spec. No. : MOS200101) Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 1/5 MICROELECTRONICS CORP. H4435S • P-Channel Enhancement-Mode MOSFET (-30V, -9.1A) 8-Lead Plastic SO-8 Package Code: S H4435S Symbol & Pin Assignment Features 5 4 6 3 • RDS(on)=20mΩ@VGS=-10V, ID=-9.1A 7 2 • RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A 8 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V -9.1 A -50 A 2.5 W -55 to +150 °C 50 °C/W ID IDM PD Tj, Tstg RθJA Drain Current (Continuous) Drain Current (Pulsed) *1 o Total Power Dissipation @TA=25 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)*2 *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board H4435S HSMC Product Specification HI-SINCERITY Spec. No. : MOS200101) Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 2/5 MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit VGS=0V, ID=-250uA 30 - - V VGS=-10V, ID=-9.1A - 15 20 VGS=-4.5V, ID=-6.9A - 20 35 Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V - - -1 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA gFS Forward Transconductance VDS=-10V, ID=-9.1A 21 - S - 20 30 - 3.43 - • Static BVDSS Drain-Source Breakdown Voltage RDS(on) Drain-Source On-State Resistance VGS(th) mΩ • Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 11 - Ciss Input Capacitance - 1210 1720- Coss Output Capacitance - 205 - Crss Reverse Transfer Capacitance - 195 - td(on) Turn-on Delay Time - 10 - tr Turn-on Rise Time VDD=-15V, RL=15Ω, ID=-1A, - 7.0 - td(off) Turn-off Delay Time VGEN=-10V, RG=3.3Ω - 45 - - 35 - - - -2.1 A - - -1.2 V tf VDS=-24V, ID=-7.0A, VGS=-4.5V VDS=-25V, VGS=0V, f=1MHz Turn-off Fall Time nC PF Ns • Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=-2.1A Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% H4435S HSMC Product Specification HI-SINCERITY Spec. No. : MOS200101) Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 3/5 MICROELECTRONICS CORP. Characteristics Curve 25 -10V -5.0V Ta=25℃ T a=150 ℃ -3.0V -3.0V 15 10 5 0 1 2 3 0 4 0 VDS,Drain-to-source Voltage(V) Fig 1.Typical Output Characteristics 1 2 3 4 VDS,Drain-to-source Voltage(V) 5 6 Fig 2.Typical Output Characteristics 25 Normalized RDS(O 25 22.5 RDS(ON)(m Ω -10V -5.0V 20 ID,Drain current( ID,Drain current( 24 22 20 18 16 14 12 10 8 6 4 2 0 ID=6.9A Ta=25℃ 20 17.5 20 ID=9.1A VGS=10V 15 10 5 0 -50 15 2 4 6 8 10 VGS,Gate-to-Source Voltage(V) 12 -25 0 25 50 75 100 Tj,Junction Temperature(℃ ) 125 150 Fig 4.Normalized On-Resistance v.s.Junction Temperature Fig 3.On-Resistance v.s.Gate Voltage 10 1.8 1.6 T j=150 1.4 IS(A) 1 VGS(th)(V Tj=25 ℃ 0.1 1.2 1 0.8 0.6 0.4 0.2 0 -50 0.01 0 0.2 0.4 0.6 0.8 1 1.2 VSD,Source-to-Drain Voltage(V) 1.4 -25 0 25 50 75 100 T j,Junction T emperature(℃ ) 125 150 Fig 6.Gate Threshold Voltage v.s.junction Temperature Fig 5.Forward Characteristic of Reverse Diode H4435S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200101) Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 4/5 SO-8 Dimension A 7 8 B 6 2 3 I 5 C Pin1 Index DIM A B C D E F G H I J K L M N O H9435S Marking: G H Pin Style: 1,2,3: Source 4: Gate 5,6,7,8: Drain 4 Note: Green label is used for pb-free packing J D K E Part A Part A Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 M L N Min. 4.85 3.85 5.80 1.22 0.37 3.74 1.45 4.80 0.05 0.30 0.19 0.37 0.23 0.08 0.00 Max. 5.10 3.95 6.20 1.32 0.47 3.88 1.65 5.10 0.20 0.70 0.25 0.52 0.28 0.13 0.15 *: Typical, Unit: mm O F 8-Lead SO-8 Plastic Surface Mounted Package HSMC Package Code: S Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 H4435S HSMC Product Specification HI-SINCERITY Spec. No. : MOS200101) Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3oC/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec Average ramp-up rate (TL to TP) Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate o o <3 C/sec <3 C/sec 183oC 217oC Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245oC ±5oC 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H4435S o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification