HSMC H4946S

HI-SINCERITY
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 1/5
MICROELECTRONICS CORP.
H4946 Series
8-Lead Plastic DIP-8
Package Code: P
N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A)
8
Features
•
• RDS(on)<41mΩ@VGS=10V, ID=5.0A
1
• RDS(on)<55mΩ@VGS=4.5V, ID=2.5A
• Low On-resistance
2
3
7
6
5
8-Lead Plastic SO-8
Package Code: S
4
H4946DS Symbol & Pin Assignment
• Fast Switching Speed
5
6
• SOP-8 Package
4
Q1
7
8
3
2
Q2
1
Pin 1: Source 2
Pin 2: Gate 2
Pin 3: Source 1
Pin 4: Gate 1
Pin 5 / 6: Drain 1
Pin 7 / 8: Drain 2
Description
The Advanced Power MOSFETS provide the designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and cost-effectiveness.
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current)
6.0
A
[email protected]=70℃
Continuous Drain Current
3.5
A
20
A
2.0
W
IDM
Drain Current (Pulsed)
*1
o
PD
Total Power Dissipation @TA=25 C
Tstg
Storage Temperature Range
-55 to +150
°C
Tj,
Operating Junction Temperature Range
-55 to +150
°C
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in2 2oz Cu PCB board
H4946DS & H4946DP
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 2/5
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
• Static
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient
VGS=0V, ID=250uA
60
Reference to 25℃, ID=1mA
V
V/℃
0.06
VGS=10V, ID=5.0A
41
VGS=4.5V, ID=2.5A
55
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
IDSS
Zero Gate Voltage Drain Current (Tj=25°C)
IGSS
gFS
1
mΩ
3
V
VDS=60V, VGS=0V
1
uA
Gate-Body Leakage Current
VGS=±20V, VDS=0V
±100
nA
Forward Transconductance
VDS=10V, ID=5.0A
7.0
S
• Drain-Source Diode Characteristics
VSD
Drain-Source Diode Forward Voltage
VGS=0V, IS=1.6A
1.2
V
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
H4946DS & H4946DP
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 3/5
MICROELECTRONICS CORP.
Characteristics Curve
25
25
Ta=150℃
10V
6.0V
4.5V
20
15
10
3.0V
5
10V
6.0V
4.5V
20
ID,Drain current(
ID,Drain current(A
Ta=25℃
15
10
3.0V
5
0
0
1
2
3
VDS,Drain-to-source Voltage(V)
0
4
0
1
Fig 1.Typical Output
3
4
Fig 2.Typical Output Characteristics
50
Normalized RDA(O
70
46
RDS(ON)(m
2
VDS,Drain-to-source Voltage(V)
42
38
60
50
40
30
20
10
34
0
-50
30
5
7 Voltage(V)
VGS,Gate-to-Source
3
9
0
50
100
150
200
Tj,JunctionTemperature(℃)
11
Fig 4.NormalizedOn-Resistance v.s.Junction
T
Fig 3.On-Resistance v.s.Gate Voltage
2.5
10
Tj=150
℃
IS(A)
VGS(th)(V
1
2
Tj=25℃
1.5
1
0.1
0.5
0.01
0
0.2 0.4 0.6 0.8
1
1.2
VSD,Source-to-Drain Voltage(V)
1.4
Fig 5.Forward Characteristic of Reverse Diode
H4946DS & H4946DP
0
-50
0
50
100
Tj,Junction Temperature(℃)
150
Fig 6.Gate Threshold Voltage v.s.junction
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 4/5
DIP-8 Dimension
8
6
7
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
α1
A
H4946DP Marking:
5
A
1
2
3
4
B
J
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
Note: Green label is used for pb-free packing
F
E
C
α1 K
G
M
H
D
I
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
Min.
6.29
9.22
3.25
3.17
0.38
2.28
7.49
8.56
0.229
o
94
6.29
Max.
6.40
9.32
*1.52
*1.27
*0.99
3.35
3.55
0.53
2.79
7.74
*3.00
8.81
0.381
o
97
6.40
*: Typical, Unit: mm
L
8-Lead DIP-8
Plastic Package
HSMC Package Code: P
SOP-8 Dimension
A
7
8
B
G
6
2
3
I
5
C
Pin1 Index
H
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
4
Note: Green label is used for pb-free packing
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
D
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
H4946DS Marking:
K
E
Part A
Part A
M
F
L
N
Min.
4.85
3.85
5.80
1.22
0.37
3.74
1.45
4.80
0.05
0.30
0.19
0.37
0.23
0.08
0.00
Max.
5.10
3.95
6.20
1.32
0.47
3.88
1.65
5.10
0.20
0.70
0.25
0.52
0.28
0.13
0.15
*: Typical, Unit: mm
O
8-Lead SO-8 Plastic
Surface Mounted Package
HSMC Package Code: S
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
H4946DS & H4946DP
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200808
Issued Date : 2008.11.12
Revised Date :2009,03,05
Page No. : 5/5
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
25
Ramp-down
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H4946DS & H4946DP
o
o
10sec ±1sec
o
o
10sec ±1sec
245 C ±5 C
260 C ±5 C
HSMC Product Specification