HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2009,03,05 Page No. : 1/5 MICROELECTRONICS CORP. H4946 Series 8-Lead Plastic DIP-8 Package Code: P N-CHANNEL ENHANCEMENT MODE POWER MOSFET (60V, 5A) 8 Features • • RDS(on)<41mΩ@VGS=10V, ID=5.0A 1 • RDS(on)<55mΩ@VGS=4.5V, ID=2.5A • Low On-resistance 2 3 7 6 5 8-Lead Plastic SO-8 Package Code: S 4 H4946DS Symbol & Pin Assignment • Fast Switching Speed 5 6 • SOP-8 Package 4 Q1 7 8 3 2 Q2 1 Pin 1: Source 2 Pin 2: Gate 2 Pin 3: Source 1 Pin 4: Gate 1 Pin 5 / 6: Drain 1 Pin 7 / 8: Drain 2 Description The Advanced Power MOSFETS provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current) 6.0 A ID@TA=70℃ Continuous Drain Current 3.5 A 20 A 2.0 W IDM Drain Current (Pulsed) *1 o PD Total Power Dissipation @TA=25 C Tstg Storage Temperature Range -55 to +150 °C Tj, Operating Junction Temperature Range -55 to +150 °C *1: Repetitive Rating: Pulse width limited by the maximum junction temperation. *2: 1-in2 2oz Cu PCB board H4946DS & H4946DP HSMC Product Specification HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2009,03,05 Page No. : 2/5 MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit • Static BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient VGS=0V, ID=250uA 60 Reference to 25℃, ID=1mA V V/℃ 0.06 VGS=10V, ID=5.0A 41 VGS=4.5V, ID=2.5A 55 RDS(on) Drain-Source On-State Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA IDSS Zero Gate Voltage Drain Current (Tj=25°C) IGSS gFS 1 mΩ 3 V VDS=60V, VGS=0V 1 uA Gate-Body Leakage Current VGS=±20V, VDS=0V ±100 nA Forward Transconductance VDS=10V, ID=5.0A 7.0 S • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=1.6A 1.2 V Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% H4946DS & H4946DP HSMC Product Specification HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2009,03,05 Page No. : 3/5 MICROELECTRONICS CORP. Characteristics Curve 25 25 Ta=150℃ 10V 6.0V 4.5V 20 15 10 3.0V 5 10V 6.0V 4.5V 20 ID,Drain current( ID,Drain current(A Ta=25℃ 15 10 3.0V 5 0 0 1 2 3 VDS,Drain-to-source Voltage(V) 0 4 0 1 Fig 1.Typical Output 3 4 Fig 2.Typical Output Characteristics 50 Normalized RDA(O 70 46 RDS(ON)(m 2 VDS,Drain-to-source Voltage(V) 42 38 60 50 40 30 20 10 34 0 -50 30 5 7 Voltage(V) VGS,Gate-to-Source 3 9 0 50 100 150 200 Tj,JunctionTemperature(℃) 11 Fig 4.NormalizedOn-Resistance v.s.Junction T Fig 3.On-Resistance v.s.Gate Voltage 2.5 10 Tj=150 ℃ IS(A) VGS(th)(V 1 2 Tj=25℃ 1.5 1 0.1 0.5 0.01 0 0.2 0.4 0.6 0.8 1 1.2 VSD,Source-to-Drain Voltage(V) 1.4 Fig 5.Forward Characteristic of Reverse Diode H4946DS & H4946DP 0 -50 0 50 100 Tj,Junction Temperature(℃) 150 Fig 6.Gate Threshold Voltage v.s.junction HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2009,03,05 Page No. : 4/5 DIP-8 Dimension 8 6 7 DIM A B C D E F G H I J K L M α1 A H4946DP Marking: 5 A 1 2 3 4 B J Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2 Note: Green label is used for pb-free packing F E C α1 K G M H D I Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Min. 6.29 9.22 3.25 3.17 0.38 2.28 7.49 8.56 0.229 o 94 6.29 Max. 6.40 9.32 *1.52 *1.27 *0.99 3.35 3.55 0.53 2.79 7.74 *3.00 8.81 0.381 o 97 6.40 *: Typical, Unit: mm L 8-Lead DIP-8 Plastic Package HSMC Package Code: P SOP-8 Dimension A 7 8 B G 6 2 3 I 5 C Pin1 Index H Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2 4 Note: Green label is used for pb-free packing Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J D DIM A B C D E F G H I J K L M N O H4946DS Marking: K E Part A Part A M F L N Min. 4.85 3.85 5.80 1.22 0.37 3.74 1.45 4.80 0.05 0.30 0.19 0.37 0.23 0.08 0.00 Max. 5.10 3.95 6.20 1.32 0.47 3.88 1.65 5.10 0.20 0.70 0.25 0.52 0.28 0.13 0.15 *: Typical, Unit: mm O 8-Lead SO-8 Plastic Surface Mounted Package HSMC Package Code: S Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 H4946DS & H4946DP HSMC Product Specification HI-SINCERITY Spec. No. : MOS200808 Issued Date : 2008.11.12 Revised Date :2009,03,05 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat 25 Ramp-down t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H4946DS & H4946DP o o 10sec ±1sec o o 10sec ±1sec 245 C ±5 C 260 C ±5 C HSMC Product Specification