EMT1 General purpose transistors (dual digital transistors) SOT-563 FEATURES z Two 2SA1037AK chips in a package z Mounting possible with SOT-563 automatic mounting machines z Transistor elements are independent,eliminating interference 1 Marking: T1 (3) (2) (1) Equivalent circuit Tr1 Tr2 (4) (5) (6) Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -150 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -6 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-7V, IC=0 -0.1 μA DC current gain hFE VCE=-6V, IC=-1mA Collector-emitter saturation voltage Transition frequency Output capacitance VCE(sat) fT Cob 120 560 IC=-50mA, IB=-5mA VCE=-12V, IC=-2mA, f=100MHz VCB=-12V, IE=0, f=1MHz -0.5 140 MHz 5 1 JinYu semiconductor V www.htsemi.com Date:2011/ 05 pF