KTA1664 TRANSISTOR (PNP) SOT-89-3L FEATURES z Complementary to KTC4376 z Small Flat Package z High Current Application 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -35 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE(sat) Collector-emitter saturation voltage VBE Base-emitter voltage Cob Collector output capacitance fT Transition frequency VCE=-1V, IC=-100mA 100 VCE=-1V, IC=-700mA 35 320 IC=-500mA,IB=-20mA VCE=-1V, IC=-10mA -0.7 -0.5 -0.8 V V VCB=-10V,IE=0, f=1MHz 19 pF VCE=-5V,IC= -10mA 120 MHz CLASSIFICATION OF hFE RANK O Y RANGE 100–200 160–320 MARKING RO RY １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５