HTSEMI KTC4375

KTC4375
TRANSISTOR (NPN)
SOT-89
FEATURES
Low voltage
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
1
2
3. EMITTER
Value
Units
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Power Dissipation
0.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=1mA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=2V,IC=0.5A
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
CLASSIFICATION OF
Rank
Range
Marking
100
320
IC=1.5A,IB=30mA
2
V
VCE=2V,IC=0.5A
1
V
VCE=2V,IC=500mA
Cob
120
VCB=10V,IE=0,f=1MHz
MHz
40
hFE(1)
O
Y
100-200
160-320
GO
GY
1 JinYu
semiconductor
www.htsemi.com
Date:2011/05
pF
KTC4375
Typical Characteristics
2 JinYu
semiconductor
www.htsemi.com
Date:2011/05