MMST4403 TRANSISTOR(PNP) SOT–323 FEATURES Complementary To MMST4401 Small Surface Mount Package MARKING:K3T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 200 mW Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-35V, IE=0 -100 nA Collector cut-off current ICEO VCE=-35V, IB=0 -500 nA DC current gain hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency Collector output capacitance fT Cob VCE=-1V, IC=-100µA 30 VCE=-1V, IC=-1mA 60 VCE=-1V, IC=-10mA 100 VCE=-2V, IC=-150mA 100 VCE=-2V, IC=-500mA 20 300 IC=-150mA, IB=-15mA -0.4 V IC=-500mA, IB=-50mA -0.75 V -0.95 V -1.3 V IC=-150mA, IB=-15mA -0.75 IC=-500mA, IB=-50mA VCE=-10V,IC=-20mA , f=100MHz VCB=-10V, IE=0, f=1MHz 200 MHz 8.5 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF