PT8205 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), [email protected], [email protected] 46mΩ RDS(ON), [email protected], [email protected] 30mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163 Millimeter REF. Min. REF. Max. Millimeter Min. Max. A 1.10 MAX. L 0.45 REF. A1 0 0.10 L1 0.60 REF. A2 0.70 1.00 θ 0° 10° b 0.30 0.50 D 0.12 REF. 2.70 3.10 e 0.95 REF. E E1 2.60 1.40 e1 1.90 REF. c 3.00 1.80 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 ID 4 IDM 25 Continuous Drain Current Pulsed Drain Current 1) TA = 25oC Maximum Power Dissipation o TA = 75 C PD TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) 2) RθJA Unit V A 1.4 W 1 o -55 to 150 100 C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PT8205 20V Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA 20 Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 3.4A 35 46 Drain-Source On-State Resistance RDS(on) VGS = 4.0V, ID = 4.3A 27 30 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA 0.8 1.5 V 0.5 V mΩ Zero Gate Voltage Drain Current 0 IDSS VDS = 16V, VGS = 0V 1 uA Gate Body Leakage IGSS VGS = ± 8V, VDS = 0V ±100 nA Forward Transconductance gfs VDS = 5V, ID = 4A 10 S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, ID = 4A VGS = 4V 11 nC 2.2 2.5 18.3 VDD = 10V, RG = 10 Ω ID = 1A, VGS = 4V 4.8 ns 43.5 20 VDS = 8V, VGS = 0V f = 1.0 MHz 800 pF 155 125 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD A 2 IS = 1.7A, VGS = 0V 0.8 1.2 V 1) Note:Pulse test: pulse width <= 300us, duty cycle<= 2% ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PT8205 20V Dual N-Channel Enhancement Mode MOSFET ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５