STD1 23S TRANSISTOR(NPN) SOT-23 FEATURES Low saturation medium current application z z Extremely low collector saturation voltage z Suitable for low voltage large current drivers z High DC current gain and large current capability Low on resistance : RON=0.6Ω(Max.) (IB=1mA) z 1. BASE 2. EMITTER 3. COLLECTOR Marking:123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 350 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V (BR) CBO IC=50μA, IE=0 20 V Collector-emitter breakdown voltage V (BR) CEO IC =1mA, IB=0 15 V Emitter-base breakdown voltage V (BR) EBO IE= 50μA, IC=0 6.5 V Collector cut-off current ICBO VCB= 20 V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 6V, IC=0 0.1 μA DC current gain hFE VCE=1V, IC= 100mA 0.3 V Collector-emitter saturation voltage Transition frequency VCE (sat) fT Collector output capacitance Cob On resistance RON conditions MIN TYP IC=50mA VCB=10V, IE=0, f=1MHz f=1KHz,IB=1mA, VIN=0.3V 260 MHz 5 pF 0.6 Ω １ JinYu semiconductor UNIT 150 IC=500mA, IB= 50mA VCE=5V, MAX www.htsemi.com Ｄａｔｅ：２０１１／０５ STD1 23S ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５