UMA3N General purpose transistors (dual transistors) SOT-353 FEATURES z Two DTA143T chips in a package z Mounting cost and area be cut in half 1 Marking: A3 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol Limits Unit VCBO Collector-Base Voltage Parameter -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -100 mA PC Collector Dissipation 150 mW Tj Junction temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Test conditions Min Typ Max Unit IC=-50μA,IE=0 -50 V(BR)CEO IC=-1mA,IB=0 -50 V V(BR)EBO IE=-50μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.5 μA Emitter cut-off current IEBO VEB=4V,IC=0 - 0.5 μA DC current gain hFE VCE=-5V,IC=-1mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Input resistor R1 V 100 600 IC=-5mA,IB=-0.25mA -0.3 VCE=-10V,IC=-5mA, f=100MHz 250 3.29 4.7 V MHz 6.11 KΩ 1 JinYu semiconductor www.htsemi.com Date:2011/ 05