HY2N60D / HY2N60M 600V / 2.0A 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, PFC and SMPS In compliance with EU RoHs 2002/95/EC Directives G 1 2 1 G 2 D S3 D 3 S Mechanical Information TO-251 TO-252 • Case: TO-252 / ITO-251 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 2 Drain Marking & Ordering Information TYPE MARKING PACKAGE PACKING HY2N60D 2N60D TO-252 2500PCS/REEL HY2N60M 2N60M TO-251 80PCS/TUBE 1 Gate Gate 3 Source Absolute Maximum Ratings (TC=25OC unless otherwise noted ) P a ra me te r S ymb o l HY2 N6 0 D HY2 N6 0 M Uni ts D r a i n- S o urc e Vo lta g e V DS 600 V Ga te -S o ur c e Vo lta g e V GS +3 0 V C o nti nuo us D ra i n C urr e nt T C = 2 5 OC P uls e d D ra i n C urr e nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T C = 2 5 OC Avalanche Energy with Single Pulse IAS=2A, VDD=50V, L=55mΗ Op e r a ti ng J unc ti o n a nd S to r a g e Te mp e ra ture Ra ng e ID 2 2 A ID M 8 8 A PD 4 3 .8 0 .3 5 43 0 .3 5 W E AS 11 0 mJ T J ,T S TG - 5 5 to +1 5 0 O C Note : 1. Maximum DC current limited by the package Thermal Characteristics PA RA M E TE R S ym b o l HY2 N6 0 D HY2 N6 0 M Uni ts Junction-to-Case Thermal Resistance R θJC 2 .8 5 2 .9 O C /W Junction-to Ambient Thermal Resistance R θJA 50 11 0 O C /W COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV1.0 : AUG. 2011 PAGE . 1 HY2N60D / HY2N60M Electrical Characteristics ( TC=25OC unless otherwise noted ) P a ra m e te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts D ra i n-S o urc e B re a k d o wn Vo lta g e B V DSS V GS =0 V, I D =2 5 0 uA 600 - - V Ga te Thre s ho ld Vo lta g e V GS (th) V D S =V GS , I D =2 5 0 uA 2 .0 - 4 .0 V R D S (o n) VGS= 10V, I D= 1.0A - 3.9 4.6 Ω I DSS VDS=600V, VGS=0V - - 10 uA I GS S V GS =+3 0 V, V D S =0 V - - +1 0 0 nΑ - 8 .8 12 - 1 .8 - S ta ti c D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urr e nt Gate Body Leakage Dynamic To ta l Ga te C ha r g e Qg Ga te -S o urc e C ha rg e Q gs Ga te -D ra i n C ha rg e Q gd - 3.2 - Turn- On D e la y Ti me t d (o n) - 11.2 18 - 12.6 16 - 2 4 .2 32 f - 1 0 .2 1 2 .2 - 250 360 - 42 66 - 1.2 4.2 Turn- On Ri s e Ti m e Turn- Off D e la y Ti m e t t r d (o ff) Turn- Off F a ll Ti m e t Inp ut C a p a c i ta nc e C i ss Outp ut C a p a c i ta nc e C oss Re ve rs e Tra ns fe r C a p a c i ta nc e C rs s V D S =4 8 0 V, ID = 2 .0 A V GS =1 0 V VDD=300V ,I D =2.0A VGS=10V ,RG=25Ω V D S =2 5 V, V GS =0 V f=1 .0 MH Z nC ns pF S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS - - - 2 .0 A M a x.P uls e d S o urc e C urre nt I SM - - - 8 .0 A D i o d e F o rwa rd Vo lta g e V SD IS = 2 .0 A , V GS =0 V - - 1 .4 V Re ve rs e Re c o ve ry Ti me t - 250 - ns Re ve rs e Re c o ve ry C ha rg e Q V GS =0 V, IF = 2 .0 A d i /d t=1 0 0 A /us - 1 .6 - uC rr rr NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%. REV1.0 : AUG. 2011 PAGE . 2 HY2N60D / HY2N60M Typical Characteristics Curves ( TC=25℃ ℃, unless otherwise noted) 10 VGS= 20V~ 7.0V ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 5 4 3 6.0V 2 5.0V 1 VDS =50V 1 25oC TJ = 125oC -55oC 0 0 0 10 20 30 40 1 50 VDS - Drain-to-Source Voltage (V) Fig.1 Output Characteristric 8 Ω) RDS(ON) - On Resistance( Resistance(Ω Ω) RDS(ON) - On Resistance( Resistance(Ω 9 Fig.2 Transfer Characteristric 8 7 6 5 VGS=10V 4 VGS=20V 3 ID =1.0A 7 6 5 4 3 2 2 0 1 2 3 4 5 4 6 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Fig.3 On-Resistance vs Drain Current Fig.4 On-Resistance vs Gate to Source Voltage 500 12 f = 1MHz VGS = 0V VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 400 300 Ciss 200 Coss 100 Crss 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic REV 1.0 : AUG. 2011 30 ID =2.0A 10 VDS=480V VDS=300V 8 VDS=120V 6 4 2 0 0 2 4 6 8 10 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic PAGE. 3 HY2N60D / HY2N60M Typical Characteristics Curves ( TC=25℃ ℃, unless otherwise noted) 1.2 VGS =10 V ID =1.0A 2.1 BVDSS - Breakdown Voltage (Normalized) RDS(ON) - On-Resistance (Normalized) 2.5 1.7 1.3 0.9 0.5 ID = 250µA 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.7 On-Resistance vs Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.8 Breakdown Voltage vs Junction Temperature IS - Source Current (A) VGS = 0V 10 TJ = 125oC 25oC 1 -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.9 Body Diode Forward Voltage Characteristic REV 1.0 : AUG. 2011 PAGE. 4