ISAHAYA INA1001AC1

INA1001AC1
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
INA1001AC1 is a silicon PNP epitaxial type transistor.
・High collector current(IC=-500mA)
0.95
2.8
1.90
・Super mini package for easy mounting
①
0.95
FEATURE
②
1.5
0.65
0.4
0.65
It is designed with high collector current and small VCE(sat).
UNIT:mm
2.8
③
・Low collector saturation voltage
(VCE(sat)<-0.25Vmax;IC=-100mA、IB=-10mA)
0.13
0~0.1
APPLICATION
0.8
1.1
・High voltage VCEO=-80V(Type)
Power supply, Relay drive
Terminal Connector
①:Base
②:Emitter
③:Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
VCEO
Collector to Emitter voltage
-80
V
VCBO
Collector to Base voltage
-80
V
VEBO
Emitter to Base voltage
-4
V
-500
mA
I
C
Collector current
PC
Collector dissipation(Ta=25℃)
200
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
Type Name
AFD
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
fT
PARAMETER
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
Gain bandwidth product
TEST CONDITIONS
I C=-1mA,I B=0mA
I C=-100μA,I E=0mA
I E=-100μA,I C=0mA
VCB=-80V,I E =0mA
VEB=-4V,I C=0mA
VCE=-1V,I C=-10mA
VCE=-1V,I C=-100mA
I C=-100mA,I B=-10mA
VCE=-1V,I E=100mA,f=100MHz
ISAHAYA ELECTRONICS CORPORATION
MIN
-80
-80
-4
95
95
50
LIMITS
TYP
MAX
-0.1
-0.1
-0.3
-
UNIT
V
V
V
μA
μA
V
MHz
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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mishap.
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Mar.2013