ISAHAYA INA5006AC1

INA5006AC1
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
FOR HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
INA5006AC1 is a silicon PNP epitaxial type transistor.
・High collector current(IC=-3A)
0.95
2.8
1.90
・Super mini package for easy mounting
①
0.95
FEATURE
②
1.5
0.65
0.4
0.65
It is designed with high collector current and small VCE(sat).
UNIT:mm
2.8
③
・Low collector saturation voltage
0.13
APPLICATION
0.8
1.1
(VCE(sat)<-0.2Vmax;IC=-1A、IB=-33mA)
0~0.1
Audiovisual apparatus, Relay drive
Terminal Connector
①:Base
②:Emitter
③:Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
VCEO
Collector to Emitter voltage
-50
V
VCBO
Collector to Base voltage
-50
V
VEBO
Emitter to Base voltage
-7
V
Collector current
-3
A
I
C
PC
Collector dissipation(Ta=25℃)
200
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
Type Name
AEJ
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
PARAMETER
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
B to E saturation voltage
Gain bandwidth product
Collector output capacitance
TEST CONDITIONS
I C=-10mA,I B=0mA
I C=-100μA,I E=0mA
I E=-100μA,I C=0mA
VCB=-50V,I E =0mA
VEB=-7V,I C=0mA
VCE=-2V,I C=-300mA
VCE=-2V,I C=-1A
I C=-1A,I B=-33mA
I C=-1A,I B=-33mA
VCE=-2V,I E=300mA,f=100MHz
VCB=-10V,f=100MHz
ISAHAYA ELECTRONICS CORPORATION
MIN
-50
-50
-7
200
100
-
LIMITS
TYP
MAX
-0.1
-0.1
500
-0.2
-1.1
180
20
-
UNIT
V
V
V
μA
μA
V
V
MHz
pF
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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mishap.
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Mar.2013