INC5002AP1 For low frequency power amplify Silicon NPN Epitaxial DESCRIPTION OUTLINE DRAWING UNIT：ｍｍ INC5002AP1 is a silicon NPN epitaxial transistor designed for relay 4.6 MAX 1.6 drive or Power supply application. 1.5 FEATURE C E 0.8 MIN ●High collector current IC=3A ●Low VCE(sat) VCE（sat）=0.6V max（@IC=3A/ IB=300mA） ●High collector dissipation PC=500mW B 2.5 ●High voltage VCEO=60V 4.2 MAX ●Small package for easy mounting. 0.53 MAX 0.4 0.48 MAX 1.5 3.0 APPLICATION DC･DC converter, Relay drive, Motor drive マーキング MARKING etc TERMINAL CONNECTOR 電極接続 Ｅ: E：EMITTER エミッタ Ｃ: C：COLLECTOR コレクタ Ｂ: ベース B：BASE JEITA:SC-62 EIAJ : SC-62 JEDEC:SOT-89 JEDEC : JEDEC：― MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage 80 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 60 V I C Collector current 3 I CM Peak Collector current Collector dissipation(Ta=25℃) Tj Tstg Type Name B B A 6 PC MARKING 500 mW Junction temperature ＋150 ℃ Storage temperature -55～＋150 ℃ W LOT № hFE ITEM ELECTRICAL CHARACTERISTICS（Ta=25℃） SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN TYP MAX UNIT V(BR)CBO C to B break down voltage I C=100μA，I E=0mA 80 - - V V(BR)EBO E to B break down voltage I E=100μA，I C=0mA 6 - - V V(BR)CEO C to E break down voltage I C=1mA，RBE=∞ 60 - - V ICBO Collector cut off current VCB=60V，I E =0mA - - 1.0 μA IEBO Emitter cut off current VEB=4V，I C=0mA - - 1.0 μA ｈＦＥ DC forward current gain VCE=2V，IC=0.5A 100 - 300 - VCE(sat) C to E saturation voltage IC=3A，I B=300mA - - 0.6 V fT Gain band width product VCE=5V，IE=-100mA - 200 - MHz Cob Collector output capacitance VCB=10V，IE=0mA，f=1MHz - 15 - pF ISAHAYA ELECTRONICS CORPORATION INC5002AP1 For low frequency power amplify Silicon NPN Epitaxial TYPICIAL CHARACTERISTICS COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 1000 DC FORWARD CURRENT GAIN hFE COLLECTOR DISSIPATION Pc(mW) 600 500 400 300 200 100 0 0 50 100 150 200 AMBIENT TEMPERATURE Ta(℃) Ta=150℃ 100 Ta=25℃ 10 0.001 0.1 1 10 COMMON EMITTER OUTPUT 1 600 COLLECTOR CURRENT IC(mA) VCE=2V COLLECTOR CURRENT IC(A) 0.01 Ta=-50℃ COLLECTOR CURRENT IC(A) COMMON EMITTER TRANSFER 0.8 0.6 Ta=150℃ 0.4 Ta=25℃ 0.2 Ta=-50℃ Pcmax=500mW Ta=25℃ IB=3.0mA 500 IB=2.5mA 400 IB=2.0mA 300 IB=1.5mA IB=1.0mA 200 IB=0.5mA 100 IB=0mA 0 0 0 0.2 0.4 0.6 0.8 1 1.2 BASE TO EMITTER VOLTAGE VBE(V) 0 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE VCE(V) BASE TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 1.5 BASE TO EMITTER SATURATION VOLTAGE VBE(sat)(V) COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat) (mV) VCE=2V IC/IB=10 Ta=150℃ 100 Ta=25℃ 10 1 0.001 Ta=-50℃ 0.01 0.1 1 COLLECTOR CURRENT IC(A) 10 IC/IB=10 1.2 Ta=-50℃ 0.9 0.6 Ta=25℃ 0.3 Ta=150℃ 0 0.001 0.01 0.1 1 COLLECTOR CURRENT IC(A) ISAHAYA ELECTRONICS CORPORATION 10 INC5002AP1 COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 300 1000 Ta=25℃ Ta=25℃ VCE=5V COLLECTOR OUTPUT CAPACITANCE Cob(pF) GAIN BAND WIDTH PRODUCT fT(MHz) For low frequency power amplify Silicon NPN Epitaxial 100 200 100 0 10 1 -1 -10 -100 -1000 0.1 1 EMITTER CURRENT IE(mA) ASO 10 1 100msec 10msec 1msec ICmax=3A 0.1 1sec 0.01 Ta=25℃ single pulse DC(0.5W) VCEOmax=60V COLLECTOR CURRENT IC(A) 100 ICMmax=6A 0.001 0.01 0.1 1 10 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) 100 COLLECTOR TO EMITTER VOLTAGE VCE(V) ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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