ISAHAYA ISC4356AS1

〈SMALL-SIGNAL TRANSISTOR〉
ISC4356AS1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
ISC4356AS1 is a silicon NPN epitaxial type transistor
4.0
3.0
7.5MAX
designed relay drive application.
FEATURE
0.1
14.0
●High collector current. IC=2A
●Low VCE(sat) VCE(sat)=0.5V max (@IC=1A, IB=50mA)
1.0
1.0
VCEo=60V
13.0MIN
●High voltage.
0.45
●High collector dissipation. PC=600mW
2.5
2.5
0.4
2.5
APPLICATION
①
②
③
Audio machine, VCR, relay drive.
JEITA:
JEDEC:
TERMINAL CONNECTER
①:EMITTER
.
MAXIMUM RATINGS(Ta=25℃)
Symbol
②:COLLECTOR
Parameter
VCBO
VEBO
VCEO
IC
ICM
Pc
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
60
6
60
2
3
600
+150
-55~+150
V
V
V
A
A
mW
℃
℃
③:BASE
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
Parameter
Limits
Test conditions
Min
Typ
Max
Unit
V(BR)CBO
C to B break down voltage
IC= 10μA , IE =0mA
60
-
-
V
V(BR)EBO
E to B break down voltage
IE= 10μA , IC =0mA
6
-
-
V
V(BR)CEO
C to E break down voltage
IC= 2mA , RBE= ∞
60
-
-
V
ICBO
Collector cut off current
VCB= 50V , IE= 0mA
-
-
0.2
μA
IEBO
Emitter cut off current
VEB = 4V , IC= 0mA
-
-
0.2
μA
hFE※
DC forward current gain
VCE = 4V , IC= 100mA
55
-
300
-
VCE(sat)
fT
Cob
C to E Saturation Voltage
IC=1A , IB= 50mA
-
0.2
0.5
V
Gain band width product
VCE= 10V , IE= -10mA
-
80
-
MHz
Collector output capacitance
VCB= 10V , IE= 0mA,f=1MHz
-
18
-
pF
※) It shows hFE classification in right table.
Item
C
D
E
hFE item
55~110
90~180
150~300
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
ISC4356AS1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
800
600
400
Pc
200
=
0.
6W
COLLECTOR DISSIPATION Pc(mW)
1000
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(℃)
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
ISC4356AS1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2012