ISAHAYA RT8H052C

<M F T>
Preliminary
RT8H052C
*This is tentative specification.
The over current protection of three shunt method
OUTLINE DRAWING
Unit:mm
0.65
①
⑥
②
⑤
③
④
1.2
0~0.1
APPLICATION
The over current protection of three shunt method.
0.33
0.95
2.8
1.50
0.81
1.1
FEATURES
● Miniaturization of a set.
● Variable VREF by external resistance.
● Open collector output.
1.9
0.65
2.80
DESCRIPTION
RT8H052C is composed by NPN transistors,
PNP transistors and resistors.
It can miniaturization of a set and reduce parts or
time necessary for completion.
This MFT composed the circuit for the over current
protection of three shunt method.
PIN CONFIGURATION
6
1
5
2
4
①IN1
②IN2
③IN3
④VREF
⑤GND
⑥VCC
3
BLOCK DIAGRAM
IN1
IN2
IN3
VREF
VCC
GND
110427
(1/4)
<M F T>
Preliminary
RT8H052C
*This is tentative specification.
The over current protection of three shunt method
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
Symbol
Parameter
Vcc
Ratings
Unit
Supply voltage
12
V
Pd
Internal power dissipation
200
mW
Kθ
Thermal derating
1.6
mW/℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
(keep dry)
-40~150
℃
Topr
Operating temperature
Tj (keep dry)
-30~150
℃
Designed value
Min Typ Max
Unit
Conditions
Ta≧25℃
ELECTRICAL CHARACTERISTIC (Ta=25℃,VCC=5V unless otherwise noted.)
Symbol
Parameter
Vcc
Operating supply voltage range
Test conditions
3
5
10
V
ICC_off
Circuit current of off states IN1=IN2=IN3=0V、VREF=0.5V
0.2
mA
ICC_on
Circuit current of on states IN1=1V、IN2=IN3=0V、VREF=0.5V
2.9
mA
VINCM
Common mode input voltage range
VIN1th
IN1 threshold voltage
VREF=0.5V、IN2=IN3=0V
0.5
V
VIN2th
IN2 threshold voltage
VREF=0.5V、IN1=IN3=0V
0.5
V
VIN3th
IN3 threshold voltage
VREF=0.5V、IN1=IN2=0V
0.5
V
0.3
-
VCC-0.8
V
110427
(2/4)
<M F T>
Preliminary
RT8H052C
*This is tentative specification.
The over current protection of three shunt method
DIP-IPM
APPLICATION CIRCUIT EXAMPLES
Highside
Driver
MCU
M
Lowside
Driver
R8
C1
IN1
R1
Q1
R5 C2
R9
R10
R6 C3
IN2
IN3
VCC
R7
VREF
R3
V1
R4
R2
GND
MFT
OPERATING EXPLANATION
This MFT have VREF terminal ,so the threshold voltage can be freely set by external connected resistance.
MFT doesn't have the output terminal for six pins MFT(VCC,GND,VREF,IN1,IN2,IN3).
The terminal VCC uses two functions of the power-supply voltage terminal and the output terminal.
The circuit current flows about 200uA, when the threshold voltage does not get over than
neither of IN1~IN3 setting of VREF. When the voltage of VREF(V) or more is impressed to
either of terminal of IN1~IN3, it enters the state of detection, the circuit current flows
to VCC becomes about 2.9mA. By using the characteristic of this circuit current, the output
signal can be made by connecting the PNP transistor outside. The output terminal is the collector
terminal of the Q1:PNP transistor. At the usual state, the PNP transistor is turning off and output Low.
At the detecting state, the PNP transistor is turning on and output High.
SELECTION OF PARTS
How to select the resistance at above application circuit example.
Resistance R1 connected between emitter bases of the Q1:PNP transistor is set to turn on
the PNP transistor when the PNP transistor is usually turned off in the circuit current
in the state, and the detected circuit current flows about MFT.
please set resistance R1 at rage 390Ω~1.5kΩ.
The current thrown into the Q1:PNP transistor is adjusted by resistance R2 between collectors GND.
Calculation formula, if making VREF from resistance.
VREF(V)=R4/(R3+R4)*V1
R5, R6, and R7 are the shunt resistance. R8, R9, R10, C1, C2, and C3 are noise filters.
Please connect it if necessary.
The above value is a theory value. Please set it after an enough evaluation.
110427
(3/4)
<M F T>
Preliminary
RT8H052C
*This is tentative specification.
The over current protection of three shunt method
THERMAL DERATING
POWER DISSIPATION Pd[mW]
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta [℃]
110427
(4/4)
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2011