GAU212S-15255 Universal Gate Drive Prototype Board FEATURE >Built in the isolated DC-DC converter for gate drive >Output peak current is +/-12A(max) >Electrical isolation voltage is 2500Vrms (for 1 minute) >Two way power supply system for drivers and input signal (VD=15V , VIN=5V) >CMOS compatible input interface RECOMMENDED IGBT MODULES MITSUBISHI NFH series IGBT modules VCES = 600V series ~ 400A class VCES = 1200V series ~ 600A class Size : 60 x 120 x 40t MITSUBISHI NF series IGBT modules VCES = 600V series ~ 600A class VCES = 1200V series ~1400A class Gate Driver : VLA502-01R http://www.idc-com.co.jp BLOCK DIAGRAM REGULATOR VD DC-AC CONVERTER GND VIN 300 ohm AMP G1 IN1 E1 REGULATOR DC-AC CONVERTER 300 ohm AMP G2 IN2 E2 http://www.idc-com.co.jp MAXIMUM RATINGS （unless otherwise noted, Ta=25C） Symbol Parameter Conditions Ratings Unit VD Supply voltage DC 16.5 V VI Input signal voltage Applied between VIN – IN1,2 50% Duty cycle , pulse width 1ms -1 ~+7 V -12 A Output peak current Pulse width 2us 12 A IOHP IOLP Viso Isolation voltage Sine wave voltage 60Hz, for 1min 2500 Vrms Topr Operating temperature No condensation allowable -20 ~ 60 ℃ Tstg Storage temperature No condensation allowable -25 ~ 85 ℃ Idrive Gate drive current Gate average current (Per one circuit) 210 mA ELECTRICAL CHARACTERISTICS ( unless otherwise noted, Ta=25C, VD=15V) Limits Symbol Parameter Conditions Unit Min Typ Max VD Supply voltage Recommended range 14.2 15 15.8 V VIN Pull-up voltage on input side Recommended range 4.75 5 5.25 V IIH “H” input signal current Recommended range 9.5 10 14 mA f Switching frequency Recommended range - - 60 kHz RG Gate resistance Recommended range 1 - - ohm VOH Plus bias voltage - 14 15.5 16.5 V VOL Minus bias voltage - -11 -8 -5.5 V tPLH “L-H” propagation time IIH = 10mA - 0.4 0.65 us tPHL “H-L” propagation time IIH = 10mA - 0.4 0.65 us http://www.idc-com.co.jp R1 INNER CIRCUIT 30 1 C3 ＋ 23 2 3 RG 24 HIC1 Dz1 Dz2 19 CN1 G1 E1 25 4 26 CN3 VD GND NC NC IN1 IN2 VIN 20 6 ＋ C1 ＋ C2 21 7 22 R2 30 1 C6 ＋ 23 2 3 RG 24 HIC2 Dz3 Dz4 19 CN2 G2 E2 25 4 HIC1,2 DZ1,2,3,4 RG C1,2,4,5 C3,6 R1,2 CN1,2 CN3 VLA502-01R Vz=18V,500mW Gate Resistor 1000μF,35V 100μF,50V 4.7k Ω,250mW B2B-XH-A B7B-XH-A ISAHAYA Low impedance Low impedance JST JST 26 6 20 7 21 ＋ C4 ＋ C5 22 **) Gate Resistor is not installed at the time of shipment. Please solder the chosen resistor. http://www.idc-com.co.jp APPLICATION EXAMPLE R1 30 1 C3 + 23 2 3 RG 24 HIC1 Dz1 Dz2 19 CN1 E1 25 4 26 CN3 15V VD 20 6 GND ＋ C2 22 IN1 R2 Input Signal IN2 HC04 etc. + C1 21 7 5V G1 30 1 VIN C6 + 23 2 3 RG 24 HIC2 Dz3 Dz4 19 26 6 20 7 21 G2 E2 25 4 CN2 + C4 + C5 22 **Open-collector(drain) type is not recommended. http://www.idc-com.co.jp PRECATION (1) Confirmation of gate average current The maximum rating of output current capacity per one circuit of the gate power supply built-in this product is 210mA. (*) Therefore the gate average current must be less than 210mA. Please calculate the gate average current by the following expression. Idrive = (Q1＋lQ2l ) X ｆ Idrive : Gate average current Q1 : Gate charge on plus bias (Please read it from data sheet of IGBT) Q2 : Gate charge on minus bias (Please read it from data sheet of IGBT) f : Switching frequency (2) Electric power setting of gate resistance At the time of the choice of gate resistance, please choose the resistance which can permit the electric power by the following calculation. Pd = Idrive X 25 + margin Pd : Total allowable power loss of gate resistance Idrive : Gate average current 25 : Total output voltage of gate power supply (*) Please refer to derating curve of VLA502 data sheet. http://www.idc-com.co.jp Part arrangement & Size Gate Resistor (This part is not installed at the time of shipment) CONNECTOR 3.75mm CONNECTOR 60mm Screw hole 3.5φ Built in DC-DC converter type Gate Driver VLA502-01R 3.75mm 120mm http://www.idc-com.co.jp