DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 (DPak) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130121b DLA10IM800UC Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 800 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case VR = 800 V TVJ = 25°C 5 µA TVJ = 150°C 0.05 mA TVJ = 25°C 1.22 V 1.40 V 1.16 V 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 145°C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.45 V T VJ = 175 °C 10 A TVJ = 175 °C 0.84 V d = 0.5 for power loss calculation only Ptot typ. VR = 800 V IF = forward voltage drop min. 30 mΩ 2 K/W K/W 0.50 TC = 25°C 75 W t = 10 ms; (50 Hz), sine TVJ = 45°C 120 A t = 8,3 ms; (60 Hz), sine VR = 0 V 130 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 100 A t = 8,3 ms; (60 Hz), sine VR = 0 V 110 A t = 10 ms; (50 Hz), sine TVJ = 45°C 72 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 70 A²s TVJ = 150 °C 50 A²s 50 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 3 pF 20130121b DLA10IM800UC Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 20 Unit A -55 150 °C -55 175 °C 1) Weight FC 1) 0.3 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking D L A 10 IM 800 UC IXYS Logo abcdefg Marking on product Assembly Line Part number Z YY = = = = = = = Diode High Efficiency Standard Rectifier (up to 1200V) Current Rating [A] Single Diode Reverse Voltage [V] TO-252AA (DPak) WW Date Code Ordering Standard Part Number DLA10IM800UC Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tape & Reel Quantity 2500 Code No. 503668 T VJ = 175°C Rectifier V 0 max threshold voltage 0.84 R 0 max slope resistance * 27 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Marking on Product MARLUI V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20130121b DLA10IM800UC Outlines TO-252 (DPak) 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20130121b DLA10IM800UC Rectifier 20 102 100 VR = 0 V 16 80 12 TVJ = 45°C TVJ = 45°C IFSM I2t IF [A] TVJ = 150°C TVJ = 125°C TVJ = 25°C 8 [A] 2 60 TVJ = 150°C [A s] TVJ = 150°C 4 0 0.5 1.0 50 Hz, 80% VRRM 40 0.001 0.01 1.5 VF [V] 101 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop 2 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time 16 14 12 10 Ptot 8 [W] 20 DC = 1 0.5 0.4 0.33 0.17 0.08 15 IF(AV)M 6 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W 10.0 K/W 12.0 K/W 4 2 DC = 1 0.5 0.4 0.33 0.17 0.08 [A] 10 RthHA = 5 0 0 0 2 4 6 8 10 12 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 50 100 150 200 TC [°C] Tamb [°C] Fig. 5 Max. forward current vs. case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature 2.0 Constants for ZthJC calculation: 1.5 i Rthi (K/W) ti (s) ZthJC 1 1.1 0.005 1.0 2 0.06 0.0003 3 0.14 0.045 4 0.2 0.2 5 0.5 0.05 [K/W] 0.5 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130121b