FII 30-06D IGBT phaseleg IC25 = 30A VCES = 600V VCE(sat) typ.= 1.9V in ISOPLUS i4-PAC™ 3 5 4 E72873 1 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 47 Ω TVJ = 125°C; non-repetitive Ptot TC = 25°C Symbol Conditions 600 V ± 20 V 30 18 A A 40 VCES A 10 µs 100 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VCE(sat) IC = 20 A; VGE = 15 V VGE(th) IC = 0.5 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff Inductive load VCE = 300 V; IC = 20 A VGE = ±15 V; RG = 47 Ω Cies QGon RthJC RthJH TVJ = 25°C TVJ = 125°C typ. max. 1.9 2.2 2.4 4.5 TVJ = 25°C TVJ = 125°C V V 6.5 V 0.6 mA mA 200 nA 0.6 50 55 200 30 0.75 0.6 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz 1.1 nF VCE = 300 V; VGE = 15 V; IC = 20 A 65 TVJ = 125°C IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 2.5 Applications •single phaseleg - buck-boost chopper •H bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier •three phase bridge - AC drives - controlled rectifier nC 1.25 with heatsink compound •NPT IGBT technology -low saturation voltage - positive temperature coefficient for easy paralleling -fast switching •HiPerFRED™ diode - optimized fast and soft reverse recovery - low operating forward voltage - low leakage current •ISOPLUS i4-PAC™ package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered E 72873 K/W K/W 20110119a 1-5 FII 30-06D Diode Symbol Conditions VRRM TVJ = 25°C to 150°C IF25 IF90 TC = 25°C TC = 90°C Symbol Conditions Maximum Ratings 600 V 30 15 A A Characteristic Values min. typ. max. 2.7 VF IF = 20 A TVJ = 25°C TVJ = 125°C 2.3 1.6 IRM trr IF = 15 A; diF/dt = -400 A/µs; VR = 300 V; VGE = 0 V; TVJ = 125°C 7 50 RthJC RthJH (per diode) with heatsink compound 4.6 V V A ns 2.3 K/W K/W Component Symbol Conditions Maximum Ratings TVJ Tstg operating VISOL IISOL < 1 mA; 50/60 Hz; t = 1 s FC Mounting force with clip Symbol Conditions CP coupling capacity between shorted pins and mounting tab in the case dS, dA dS, dA pin - pin pin - backside metal -55...+150 -55...+125 °C °C 2500 V~ 20...120 Nm Characteristic Values min. typ. max. 40 pF 1.7 5.5 mm mm Weight 6 g A2 A E1 L L1 D R D1 Q E D2 DIM. C 4x e A1 1 2 3 4 5 W IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved b2 b4 b A A1 A2 b b2 b4 C D D1 D2 E E1 e L L1 Q R W MILLIMETER MIN MAX 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 19.56 20.29 16.76 17.53 3.81 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 ― INCHES MIN MAX 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.770 0.799 0.660 0.690 0.15 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 ― Die konvexe Form des Substrates ist typ. < 0.05 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side 20110119a 2-5 FII 30-06D IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110119a 3-5 FII 30-06D 10 1 D=0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 0.1 IGBT ZthJH[K/W] 0.01 0.001 100 t (s) IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110119a 4-5 FII 30-06D Diode 40 2000 A nC 30 IF 40 TVJ= 100°C VR = 300V 1500 30 IRM Qr TVJ=150°C TVJ= 100°C VR = 300V A TVJ=100°C TVJ= 25°C 20 1000 10 0 IF= 30A IF= 15A IF= 7.5A 500 0 1 2 10 0 100 V A/µs 1000 -diF/dt VF Forward current IF versus VF 0 0 120 trr 1.5 TVJ= 100°C V IF = 15A 600 A/µs 800 1000 -diF/dt 1.6 VFR µs VFR 15 110 Kf IF= 30A IF= 15A IF= 7.5A 100 1.0 IRM 400 20 TVJ= 100°C VR = 300V ns 200 Peak reverse current IRM versus -diF/dt Reverse recovery charge Qr versus -diF/dt 2.0 1.2 tfr 10 tfr 0.8 90 Qr 0.5 IF= 30A IF= 15A IF= 7.5A 20 5 80 0.4 15-06A 0.0 0 40 80 70 120 °C 160 0 200 400 TVJ 600 800 1000 A/µs 0 0 200 -diF/dt Dynamic parameters Qr, IRM versus TVJ Recovery time trr versus -diF/dt 400 0.0 600 A/µs 800 1000 diF/dt Peak forward voltage VFR and tfr versus diF/dt 10 (ZthJH is measured using 50 µm thermal grease) 1 D= D= D= D= D= D= D= D= 0.00001 0.0001 0.001 0.01 t(s) 0.1 1 10 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.1 FRED ZthJH [K/W] 0.01 0.001 100 Transient thermal resistance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110119a 5-5