Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE(sat) tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC90 ICM TC = 25°C TC = 90°C TC = 25°C, 1ms 110 65 300 A A A SSOA VGE = 15V, TVJ = 125°C, RG = 1Ω ICM = 100 A (RBSOA) Clamped Inductive Load PC TC = 25°C G C PLUS247TM (IXBX) VCE < 0.8 • VCES G 1040 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque (TO-264 ) Mounting Force (PLUS247 ) Weight TO-264 PLUS247 (TAB) E C E G = Gate E = Emitter (TAB) C = Collector TAB = Collector Features z z z z z International Standard Packages High Blocking Voltage Fast Switching High Current Handling Capability Anti-Parallel Diode Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 1700 VGE(th) IC = 1.5mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES, VGE = 0V VCE = 0V, VGE = ± 20V VCE(sat) IC z V 5.5 = 42A, VGE = 15V, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 3 mA ±100 nA 4.95 5.15 6.00 High Power Density Low Gate Drive Requirement Intergrated Diode Can Be Used for Protection V 50 μA TJ = 125°C IGES z V V Applications z z z z Switched-Mode and Resonant-Mode Power Supplies UPS AC Motor Drives Substitutes for High Voltage MOSFETs DS100166(06/09) IXBK75N170A IXBX75N170A Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS Characteristic Values Min. Typ. Max. IC = 42A, VCE = 10V, Note 1 28 TO-264 AA ( IXBK) Outline 48 S 7200 pF 450 pF Cres 150 pF Qg 358 nC Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = 42A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri td(off) tfi Eoff Inductive load, TJ = 25°C IC = 42A, VGE = 15V VCE = 0.8 • VCES, RG = 1Ω Note 2 46 nC 148 nC 26 40 418 60 3.80 ns ns ns ns mJ 110 7.00 27 38 420 175 6.35 Inductive load, TJ = 125°C IC = 42A, VGE = 15V VCE = 0.8 • VCES, RG = 1Ω Note 2 RthJC ns ns ns ns mJ 0.12 °C/W RthCS 0.15 °C/W A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXBX) Outline Reverse Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max VF IF = 42A, VGE = 0V, Note 1 trr IRM QRM IF = 42A, VGE = 0V, -diF/dt = 100A/μs Notes: Dim. 4.2 360 19 3.5 VR = 100V, VGE = 0V V ns A μC Terminals: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. Additional provisions for lead-to-lead isolation are required at VCE >1200V. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Dim. 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Millimeter Min. Max. Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 b2 1.14 1.91 2.92 1.40 2.13 3.12 .045 .075 .115 .055 .084 .123 C D E e L L1 Q R 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXBK75N170A IXBX75N170A Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 90 240 VGE = 25V 15V 11V 80 VGE = 25V 15V 9V IC - Amperes 60 IC - Amperes 11V 200 70 50 7V 40 30 9V 160 120 80 7V 20 40 10 5V 5V 0 0 0 1 2 3 4 5 6 7 8 0 2 4 6 8 12 14 16 18 125 150 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC 90 1.6 VGE = 25V 15V 11V 9V 70 VGE = 15V 1.5 1.4 VCE(sat) - Normalized 80 IC - Amperes 10 VCE - Volts VCE - Volts 60 50 7V 40 30 20 I C = 84A I C = 42A I C = 21A 1.3 1.2 1.1 1.0 0.9 0.8 10 0.7 5V 0.6 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 VCE - Volts 50 75 100 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 10.0 160 TJ = 25ºC 9.0 140 I C IC - Amperes VCE - Volts 8.0 = 84A 7.0 6.0 42A 120 100 80 TJ = 125ºC 25ºC - 40ºC 60 5.0 40 4.0 20 21A 3.0 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGE - Volts IXYS REF: B_75N170A(8T)6-30-09 IXBK75N170A IXBX75N170A Fig. 7. Transconductance Fig. 8. Gate Charge 100 16 TJ = - 40ºC 90 25ºC 125ºC I G = 10mA 10 VGE - Volts 60 I C = 42A 12 70 g f s - Siemens VCE = 850V 14 80 50 40 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 220 0 40 80 120 160 200 240 IC - Amperes QG - NanoCoulombs Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Capacitance 280 320 360 100,000 140 f = 1 MHz Capacitance - PicoFarads 120 TJ = 25ºC J IF - Amperes Cies 10,000 100 TJ = 125ºC 80 60 40 1,000 Coes 100 Cres 20 0 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 40 VCE - Volts VF - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Reverse-Bias Safe Operating Area 120 1.000 100 Z(th)JC - ºC / W IC - Amperes 80 60 40 0.100 0.010 TJ = 125ºC 20 0 200 RG = 1Ω dV / dt < 10V / ns 400 600 800 1000 1200 1400 1600 1800 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXBK75N170A IXBX75N170A Fig. 13. Inductive Turn-off Switching Energy Loss vs. Gate Resistance Fig. 14. Inductive Turn-off Switching Energy Loss vs. Collector Current 14 15 TJ = 125ºC , VGE = 15V 14 VCE = 1360V 10 12 Eoff - MilliJoules Eoff - MilliJoules 13 RG = 1Ω , VGE = 15V 12 VCE = 1360V I C = 84A 11 10 9 8 I 7 C TJ = 125ºC 8 6 TJ = 25ºC 4 = 42A 2 6 0 5 1 2 3 4 5 6 7 8 9 20 10 30 40 50 RG - Ohms Fig. 15. Inductive Turn-off Switching Energy Loss vs. Junction Temperature 80 90 240 RG = 1Ω , VGE = 15V 14 750 tf i 220 VCE = 1360V t f i - Nanoseconds I C = 84A 8 6 I C = 42A 4 2 700 650 VCE = 1360V 180 600 160 I C 550 = 42A 140 500 120 I C 450 = 84A 100 400 80 350 60 0 35 45 55 65 75 85 95 105 115 4 5 6 7 8 9 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature tfi t d(off) - - - - RG = 1Ω , VGE = 15V TJ = 125ºC 280 560 240 480 160 440 TJ = 25ºC 400 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 I C = 84A 80 0 80 420 380 280 70 VCE = 1360V 120 40 60 440 400 320 50 t d(off) - - - - 160 40 40 tfi RG = 1Ω , VGE = 15V I C = 42A 360 30 460 200 80 0 10 360 340 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 320 125 t d(off) - Nanoseconds 520 t d(off) - Nanoseconds VCE = 1360V 600 200 20 3 RG - Ohms 280 120 2 TJ - Degrees Centigrade 320 240 300 1 125 t f i - Nanoseconds 25 t d(off) - Nanoseconds 10 t d(off) - - - - TJ = 125ºC, VGE = 15V 200 12 Eoff - MilliJoules 70 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 16 t f i - Nanoseconds 60 IC - Amperes IXBK75N170A IXBX75N170A Fig. 20. Inductive Turn-on Switching Times vs. Collector Current Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 120 60 tr i 140 t d(on) - - - - 55 t r i - Nanoseconds C 50 = 84A 100 45 80 40 60 35 I C = 42A 40 30 20 25 0 20 1 2 3 4 5 6 7 8 9 tr i t d(on) - - - - 32 RG = 1Ω , VGE = 15V VCE = 1360V 80 30 60 28 TJ = 125ºC, 25ºC 40 26 20 24 0 22 20 10 RG - Ohms t d(on) - Nanoseconds I t d(on) - Nanoseconds VCE = 1360V 120 34 100 TJ = 125ºC, VGE = 15V t r i - Nanoseconds 160 30 40 50 60 70 80 90 IC - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 140 34 tr i 120 t d(on) - - - - 32 RG = 1Ω , VGE = 15V t r i - Nanoseconds 100 30 I C = 84A 80 28 60 26 I C t d(on) - Nanoseconds VCE = 1360V = 42A 40 24 20 25 35 45 55 65 75 85 95 105 115 22 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: B_75N170A(8T)6-30-09