IXFN44N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = = ≤ ≤ 800V 37A Ω 190mΩ 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 37 A IDM TC = 25°C, Pulse Width Limited by TJM 130 A IA EAS TC = 25°C TC = 25°C 44 3.5 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 780 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features z z z z z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 800 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 6.5 V ±200 nA TJ = 125°C VGS = 10V, ID = 22A, Note 1 © 2012 IXYS CORPORATION, All Rights Reserved 50 μA 2.5 mA 190 mΩ High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100360B(10/12) IXFN44N80Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 22 VDS = 20V, ID = 22A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 37 S 10950 pF 957 pF 95 pF 0.20 Ω 45 ns 60 ns 63 ns 20 ns 185 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 22A RG = 1Ω (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 22A Qgd 67 nC 83 nC (M4 screws (4x) supplied) 0.16 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 22A, -di/dt = 100A/μs 1.8 13.4 VR = 100V, VGS = 0V 300 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN44N80Q3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 45 110 VGS = 10V 9V 40 VGS = 10V 100 90 35 80 ID - Amperes ID - Amperes 9V 8V 30 25 20 7V 15 70 60 50 8V 40 30 10 7V 20 5 6V 10 6V 0 0 0 1 2 3 4 5 6 7 0 8 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature 45 3.0 VGS = 10V 9V 40 VGS = 10V 2.6 R DS(on) - Normalized 35 ID - Amperes 30 25 8V 20 15 2.2 I D = 44A 1.8 I D = 22A 1.4 1.0 7V 10 0.6 5 6V 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 40 3.0 VGS = 10V 35 2.6 30 2.2 ID - Amperes R DS(on) - Normalized TJ = 125ºC 1.8 TJ = 25ºC 1.4 25 20 15 10 1.0 5 0 0.6 0 10 20 30 40 50 60 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN44N80Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 70 60 TJ = - 40ºC 60 25ºC g f s - Siemens ID - Amperes 50 TJ = 125ºC 25ºC - 40ºC 50 40 30 40 125ºC 30 20 20 10 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 Fig. 10. Gate Charge 140 10 VDS = 400V 9 120 I D = 22A 8 100 I G = 10mA 7 6 VGS - Volts IS - Amperes 40 ID - Amperes 80 60 5 4 TJ = 125ºC 3 40 TJ = 25ºC 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 40 VSD - Volts 80 120 160 200 240 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz RDS(on) Limit 100 10,000 ID - Amperes Capacitance - PicoFarads Ciss 1,000 Coss 25µs 250µs 10 1 100 TJ = 150ºC 1ms TC = 25ºC Single Pulse Crss 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN44N80Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.4 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N80Q3(Q8-R88)10-10-12