IXFN70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = 600V ID25 = 70A Ω RDS(on) ≤ 88mΩ ≤ 250ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B E153432 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Maximum Ratings 600 600 V V VGSS VGSM Continuous Transient ±30 ±40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 70 280 A A IA TC = 25°C 70 A EAS TC = 25°C 5 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 890 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL 1.6mm (0.062 in.) from Case for 10s VISOL 50/60Hz, RMS IISOL ≤ 1mA Md t = 1min t = 1s S G S D G = Gate S = Source Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features z z z z Mounting Torque Terminal Connection Torque Weight z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2009 IXYS Corporation, All Rights Reserved TJ = 125°C Double Metal Process for Low Gate Resistance miniBLOC, with Aluminium Nitride Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D = Drain DC-DC Converters Switched-Mode and Resonant-Mode Power Supplies DC Choppers Pulse Generators Advantages V 5.5 V ±200 nA 50 3 μA mA 88 mΩ z z z Easy to Mount Space Savings High Power Density DS99029D(06/09) IXFN70N60Q2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 36 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 35A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd SOT-227B Outline 50 S 12 nF 1340 pF 345 pF 26 ns 25 ns 60 ns 12 ns 265 nC 57 nC 120 nC 0.14 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 70 A Repetitive, Pulse Width Limited by TJM 280 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns IF = 25A, -di/dt = 100A/μs 1.2 8.0 VR= 100V, VGS = 0V μC A Notes1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. Ordering Information The IXFN70N60Q2 is also available with brass capture nuts in place of the normal Zinc coated steel capture nuts. The ordering part number is IXFN70N60Q2-BN. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN70N60Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 70 140 VGS = 10V 7V 60 50 7V 100 6V I D - Amperes I D - Amperes VGS = 10V 120 40 30 20 80 6V 60 40 5V 10 20 0 0 0 1 2 3 4 5 6 5V 0 7 2 4 6 VDS - Volts Fig. 3. Output Characteristics @ 125ºC 16 18 20 Junction Temperature 3.0 VGS = 10V 7V 2.6 RD S (on) - Normalized 60 I D - Amperes 14 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. 70 6V 50 40 5V 30 20 VGS = 10V 2.2 I D = 70A 1.8 I D = 35A 1.4 1.0 0.6 10 0.2 -50 0 0 2 4 6 8 10 12 14 16 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to 0.5 I D25 Value vs. I D Fig. 6. Drain Current vs. Case Temperature 2.8 80 2.6 VGS = 1 0V 70 T J = 1 25ºC 2.4 60 2.2 I D - Amperes RD S (on) - Normalized 8 10 12 VDS - Volts 2.0 1.8 1.6 1.4 1.2 40 30 20 T J = 25ºC 1.0 50 10 0.8 0.6 0 20 40 60 I D 80 - Amperes © 2009 IXYS Corporation, All Rights Reserved 100 120 140 0 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFN70N60Q2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 100 90 90 80 80 T J = 1 25ºC 25ºC - 40ºC 60 50 40 70 gf s - Siemens I D - Amperes 70 T J = - 40ºC 25ºC 60 1 25ºC 50 40 30 30 20 20 10 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 30 Fig. 9. Source Current vs. Source-To-Drain Voltage D 50 60 70 80 90 100 - Amperes Fig. 10. Gate Charge 10 140 9 120 VD S = 300V I D = 35A I G = 10mA 8 100 7 VG S - Volts I S - Amperes 40 I V GS - Volts 80 60 5 4 3 T J = 1 25ºC 40 6 2 T J = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 40 80 Q V SD - Volts 120 G 160 200 240 280 - nanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1.000 100000 Ciss Z(th)JC - ºC / W Capacitance - pF f = 1 MHz 10000 Coss 1000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 V DS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F _70N60Q2(95)5-28-08-A