Power MOSFET IXKK85N60C CoolMOSTM Superjunction MOSFET VDSS ID25 RDS(on) D Low RDS(on), High Voltage = = ≤ 600V 85A Ω 36mΩ G S TO-264 G D S Symbol Test Conditions VDSS TJ = 25°C Maximum Ratings 600 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 85 A ID100 TC = 100°C 55 A IAS EAS TC = 25°C, ID = 10A TC = 25°C, ID = 20A 1.8 1 J mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns -55 ... +150 -55 ... +150 °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 10 g TJ Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque Weight Tab G = Gate S = Source D = Drain Tab = Drain Features 3RD Generation CoolMOS Power MOSFET - High Blocking Capability - Low on Resistance - Avalanche Rated z Low Thermal Resistance Due to Reduced Chip Thickness z Applications Switch-Mode Power-Supplies Uninterruptible Power Supplies z Power Factor Correction z Welding z Inductive Heating z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 5.4mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 55A, Note 1 Characteristic Values Min. Typ. Max. 2.0 4.0 V ±200 nA 50 μA 500 μA TJ = 125°C © 2012 IXYS CORPORATION, All Rights Reserved 30 36 mΩ DS99065C(11/12) IXKK85N60C Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz TO-264 (IXKK) Outline 13.6 nF 4400 pF 290 pF Crss td(on) Resistive Switching Times 20 ns tr VGS = 13V, VDS = 380V, ID = 85A 27 ns 110 ns 10 ns 500 640 nC 50 nC 240 nC td(off) RG = 1Ω (External) tf Qg(on) VGS = 10V, VDS = 350V, ID = 85A Qgs Qgd 0.18 °C/W RthJC RthCH 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 85 A Repetitive, Pulse Width Limited by TJM 250 A VSD IF = IS, VGS = 0V, Note 1 1.2 V trr QRM IRM IF = 85A, -di/dt = 200A/μs Note 580 46 140 VR = 350V, VGS = 0V 1. Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 ns μC A Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXKK85N60C Fig. 1. Output Characteristics @ 25 De g. C Fig. 2. Extended Output Characteristics @ 25 deg. C 360 100 VGS = 10V 6V 5V tp = 300µs 90 80 280 I D - Amperes I D - Amperes 70 60 50 VGS = 10V 7V tp = 300µs 320 4.5V 40 30 6V 240 200 160 120 5V 80 20 40 4V 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 12 14 16 18 V D S - Volts V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C Fig. 4. RDS(on) Norm alized to ID100 Value vs. Junction Tem perature 2.8 100 VGS = 10V 5V tp = 300µs 90 VGS = 10V 2.5 tp = 300µs RD S (on) - Normalized I D - Amperes 80 70 4.5V 60 50 40 30 4V 2.2 1.9 I D = 60A 1.6 I D = 30A 1.3 1 20 0.7 10 0 0.4 0 1 2 3 4 5 6 -50 7 -25 V D S - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID100 Value vs. ID Fig. 6. Drain Current vs. Case Tem perature 4 100 VGS = 10V 3.7 90 tp = 300µs 3.4 80 3.1 TJ = 125ºC 70 I D - Amperes RD S (on) - Normalized 0 2.8 2.5 2.2 1.9 60 50 40 30 1.6 20 1.3 TJ = 25ºC 1 10 0.7 0 0 40 80 120 160 200 240 I D - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 280 320 360 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXKK85N60C Fig. 8. Transconductance Fig. 7. Input Adm ittance 240 180 210 160 140 g f s - Siemens I D - Amperes 180 150 120 90 TJ = 125ºC 25ºC -40ºC 60 TJ = -40ºC 25ºC 125ºC 120 100 80 60 40 30 20 0 0 2 2.5 3 3.5 4 4.5 5 5.5 6 0 30 60 90 V G S - Volts 200 180 9 160 8 140 7 120 100 TJ = 125ºC 60 180 210 240 VDS = 350V I D = 80A I G = 10mA 6 5 4 3 TJ = 25ºC 40 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 60 120 180 240 300 360 420 480 540 Q G - nanoCoulombs V S D - Volts Fig. 12. Maxim um Transient The rm al Resistance Fig. 11. Capacitance 0.18 100000 f = 1MHz 0.16 C iss 0.14 10000 R (th) J C - (ºC/W) Capacitance - pF 150 Fig. 10. Gate Charge 10 VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-ToDrain Voltage 80 120 I D - Amperes C oss 1000 100 0.12 0.1 0.08 0.06 0.04 C rss 0.02 0 10 0 10 20 30 40 50 60 70 80 90 100 V DS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 Pulse Width - milliseconds 1000