Preliminary Technical Information IXTA160N075T IXTP160N075T TrenchMVTM Power MOSFET = 75 V = 160 A Ω ≤ 6.0 mΩ VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 75 75 V V Transient ± 20 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 160 75 430 A A A IAR EAS TC = 25°C TC = 25°C 25 750 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175C, RG = 5 Ω 3 V/ns PD TC = 25°C 360 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque (TO-3P, TO-220) Weight TO-220 TO-263 1.13 / 10 Nm/lb.in. 3 2.5 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 75 VGS(th) VDS = VGS, ID = 250 μA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) g g V TJ = 150°C VGS = 10 V, ID = 25 A, Notes 1, 2 5.1 4.0 V ± 200 nA 5 250 μA μA 6.0 mΩ TO-263 (IXTA) G S D (TAB) TO-220 (IXTP) D (TAB) GD S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99520 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTA160N075T IXTP160N075T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Min. Typ. Max. 65 100 S Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss TO-263 (IXTA) Outline 4950 pF 790 pF 145 pF td(on) Resistive Switching Times 29 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 64 ns td(off) RG = 5 Ω (External) 60 ns 60 ns 112 nC 30 nC 30 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 0.42 °C/W RthJC RthCH Pins: TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0 V 160 A ISM Pulse width limited by TJM 430 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/μs 80 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 TO-220 (IXTP) Outline ns VR = 40 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: PRELIMINARYTECHNICALINFORMATION 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTA160N075T IXTP160N075T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 160 280 VGS = 10V 9V 8V 7V 140 7V 200 ID - Amperes ID - Amperes 120 VGS = 10V 9V 8V 240 100 80 6V 60 160 6V 120 80 40 5V 40 20 0 5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 4 5 6 Fig. 4. RDS(on) Normalized to ID = 80A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 160 2.6 V GS = 10V 9V 8V 7V 120 2.2 100 80 VGS = 10V 2.4 RDS(on) - Normalized 140 ID - Amperes 3 VDS - Volts VDS - Volts 6V 60 5V 2.0 1.8 I D = 160A 1.6 1.4 I D = 80A 1.2 40 1.0 20 0.8 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 2.8 140 VGS = 10V 15V - - - - 2.6 External Lead Current Limit for TO-263 (7-Lead) TJ = 175ºC 120 2.4 2.2 100 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2 1.8 1.6 1.4 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 40 1.2 1 20 TJ = 25ºC 0.8 0 0.6 0 50 100 150 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA160N075T IXTP160N075T Fig. 8. Transconductance Fig. 7. Input Admittance 140 270 TJ = - 40ºC 240 210 25ºC 100 180 g f s - Siemens ID - Amperes 120 TJ = -40ºC 25ºC 150ºC 150 120 80 150ºC 60 90 40 60 20 30 0 0 3 3.5 4 4.5 5 5.5 6 6.5 0 7 50 100 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 250 300 Fig. 10. Gate Charge 270 10 240 9 V DS = 37V I D = 25A 8 210 I G = 10mA 7 180 VGS - Volts IS - Amperes 150 I D - Amperes 150 120 TJ = 150ºC 6 5 4 90 3 TJ = 25ºC 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 10 20 30 VSD - Volts 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 C iss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 C oss 0.10 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA160N075T IXTP160N075T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 80 70 RG = 5Ω 65 VGS = 10V 60 VDS = 38V 70 TJ = 25ºC t r - Nanoseconds t r - Nanoseconds 75 55 50 45 40 I D = 50A 35 RG = 5Ω V GS = 10V 50 V DS = 38V 40 30 I D = 25A 30 60 TJ = 125ºC 25 20 20 15 10 25 35 45 55 65 75 85 95 105 115 25 125 30 35 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - tr 85 40 60 82 38 58 70 36 60 34 I D = 50A t f - Nanoseconds t r - Nanoseconds I D = 25A 56 40 30 30 28 20 26 10 24 42 8 10 12 14 16 18 RG = 5Ω, VGS = 10V 76 67 I D = 50A 48 64 46 61 44 58 20 25 35 T J = 125ºC 90 130 86 120 82 V DS = 38V 78 74 T J = 25ºC 52 70 50 66 48 46 T J = 125ºC 42 25 30 35 85 95 105 115 55 125 40 45 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 50 td(off) - - - - tf 210 TJ = 125ºC, VGS = 10V 190 VDS = 38V 100 170 I D = 25A 90 150 I D = 50A 80 130 70 110 58 60 90 54 50 70 50 40 62 T J = 25ºC 44 75 230 110 t f - Nanoseconds RG = 5Ω, V GS = 10V 65 t d ( o f f ) - Nanoseconds td(off) - - - - t d ( o f f ) - Nanoseconds t f - Nanoseconds 58 54 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 62 tf 45 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 56 70 50 RG - Ohms 60 73 I D = 25A 52 32 6 79 VDS = 38V 54 50 4 td(off) - - - - tf t d ( o f f ) - Nanoseconds 62 t d ( o n ) - Nanoseconds VDS = 38V 50 42 TJ = 125ºC, V GS = 10V 80 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 100 90 40 I D - Amperes 50 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_160N075T__4V__6_16_06.xls