IXTA80N10T IXTP80N10T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ 100V 80A 14mΩ Ω TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 80 220 A A IA EAS TC = 25°C TC = 25°C 25 400 A mJ PD TC = 25°C 230 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns -55 ... +175 175 -55 ... +175 °C °C °C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 D (Tab) 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TO-220AB (IXTP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z International Standard Packages 175°C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z Low RDS(on) z Advantages z z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 105 VGS(th) VDS = VGS, ID = 100μA 2.5 IGSS Applications V 5.0 V VGS = ± 20V, VDS = 0V ± 200 nA IDSS VDS = 105V, VGS= 0V 5 150 μA μA RDS(on) VGS = 10V, ID = 25A, Note 1 & 2 TJ = 150°C 14 mΩ z z z z z z © 2009 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Automotive - Motor Drives - DC/DC Conversion - 42V Power Bus - ABS Systems DC/DC Converters and Off-Line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications Distributed Power Architechtures and VRMs Electronic Valve Train Systems DS99648A(11/09) IXTA80N10T IXTP80N10T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 33 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 10A RG = 15Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd 55 S 3040 pF 420 pF 90 pF 31 ns 54 ns 40 ns 48 ns 60 nC 21 nC Dim. Millimeter Min. Max. Inches Min. Max. 15 nC A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 0.65 RthJC RthCS TO-263 (IXTA) Outline °C/W °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. TO-220 (IXTP) Outline IS VGS = 0V 80 A ISM Repetitive, Pulse Width Limited by TJM 220 A VSD IF = 25A, VGS = 0V, Note 1 1.1 V trr IF = 25A, -di/dt = 100A/μs 100 1. Gate 2. Drain 3. Source ns VR = 50V, VGS = 0V Pins: Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-kole packages RDS(on) Kelvin test contact location must be 5 mm or less from the package body. 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA80N10T IXTP80N10T Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 280 80 VGS = 10V 9V 8V 70 VGS = 10V 240 200 ID - Amperes ID - Amperes 60 50 7V 40 30 9V 160 8V 120 80 20 6V 7V 40 10 0 6V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 2 4 6 8 80 14 16 18 20 2.8 VGS = 10V 9V 8V 70 R DS(on) - Normalized 50 7V 40 30 6V 20 VGS = 10V 2.4 60 ID - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 2.0 I D = 80A 1.6 I D = 40A 1.2 0.8 10 5V 0.4 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 2.4 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 4.6 4.2 80 VGS = 10V 15V - - - - 3.8 TJ = 175ºC 70 3.4 ID - Amperes R DS(on) - Normalized 10 VDS - Volts VDS - Volts 3.0 2.6 2.2 60 50 40 30 1.8 20 1.4 1.0 10 TJ = 25ºC 0.6 0 0 25 50 75 100 125 150 175 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 200 225 250 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXTA80N10T IXTP80N10T Fig. 8. Transconductance Fig. 7. Input Admittance 140 80 120 70 60 g f s - Siemens 100 ID - Amperes TJ = - 40ºC 80 60 TJ = 150ºC 25ºC - 40ºC 40 25ºC 50 40 150ºC 30 20 20 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 20 40 60 VGS - Volts 80 100 120 140 160 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 240 200 9 VDS = 50V 8 I D = 25A I G = 10mA 160 VGS - Volts IS - Amperes 7 120 80 TJ = 150ºC 6 5 4 3 2 40 TJ = 25ºC 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 0 5 10 VSD - Volts 15 20 25 30 35 40 45 50 55 60 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 1.00 10,000 Ciss 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA80N10T IXTP80N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 80 70 VDS = 50V 55 D TJ = 25ºC 70 t r - Nanoseconds t r - Nanoseconds VDS = 50V 60 I RG = 15Ω , VGS = 10V 75 RG = 15Ω , VGS = 10V 65 = 30A 50 65 60 55 50 45 45 40 I D TJ = 125ºC = 10A 40 35 35 25 35 45 55 65 75 85 95 105 115 10 125 12 14 16 18 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 95 tr td(on) - - - - 85 65 120 55 I D = 10A 45 40 t f - Nanoseconds I D = 30A 80 35 0 25 15 20 25 30 35 40 45 50 72 tf 46 60 44 56 43 42 48 41 44 40 40 39 35 45 78 160 55 70 140 75 85 95 105 115 36 125 54 TJ = 125ºC 42 46 40 38 TJ = 25ºC 38 30 22 24 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 26 28 30 230 VDS = 50V t f - Nanoseconds 44 td(off) - - - - TJ = 125ºC, VGS = 10V 120 190 I D = 10A 100 150 80 110 60 I D t d ( o f f ) - Nanoseconds 62 t d ( o f f ) - Nanoseconds t f - Nanoseconds 65 270 tf td(off) - - - - 46 20 52 I D = 30A 25 VDS = 50V 18 64 VDS = 50V Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 15Ω, VGS = 10V 16 I D = 10A TJ - Degrees Centigrade tf 14 68 td(off) - - - - RG = 15Ω, VGS = 10V 45 55 50 12 30 48 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 10 28 76 RG - Ohms 48 26 t d ( o f f ) - Nanoseconds 75 160 24 49 47 VDS = 50V t d ( o n ) - Nanoseconds t r - Nanoseconds TJ = 125ºC, VGS = 10V 200 22 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 280 240 20 ID - Amperes 70 = 30A 40 30 15 20 25 30 35 40 45 50 55 RG - Ohms IXYS REF: T_80N10T(3V)12-11-07-A