Preliminary Technical Information TrenchT2TM Power MOSFET IXTA100N04T2 IXTP100N04T2 VDSS ID25 = 40V = 100A Ω ≤ 7mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient ± 20 V 100 A 75 A 300 A ID25 TC = 25°C ILRMS Lead Current Limit, RMS IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 50 A EAS TC = 25°C 300 mJ PD TC = 25°C 150 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C TJ TL TSOLD 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-263 TO-220 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g S (TAB) TO-220 (IXTP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z z z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance 175°C Operating Temperature High current handling capability ROHS Compliant High performance Trench Technology for extremely low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 40 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 4.0 V ±100 nA 2 μA TJ = 150°C VGS = 10V, ID = 25A, Notes 1, 2 © 2008 IXYS CORPORATION, All rights reserved 50 μA 7 mΩ z z z z Easy to mount Space savings High power density Synchronous Applications • Synchronous Buck Converters • High Current Switching Power Supplies • Battery Powered Electric Motors • Resonant-mode power supplies • Electronics Ballast Application • Class D Audio Amplifiers DS99972(4/08) IXTA100N04T2 IXTP100N04T2 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 27 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Resistive Switching Times VGS = 10V, VDS = 20V, ID = 0.5 • ID25 RG = 5Ω (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 45 S 2690 pF 490 pF 105 pF 12.0 ns 5.2 ns 15.8 ns 6.4 ns 25.5 nC 8.0 nC 5.7 nC 1.0 °C/W RthJC RthCH TO-263 (IXTA) Outline TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 A ISM Repetitive, Pulse width limited by TJM 400 A VSD IF = 50A, VGS = 0V, Note 1 1.2 V trr IF = 50A, VGS = 0V IRM -di/dt = 100A/μs VR = 20V QRM 34 ns 1.44 A 24.5 nC TO-220 (IXTP) Outline Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA100N04T2 IXTP100N04T2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 100 VGS = 15V 10V 9V 8V 90 80 VGS = 15V 300 250 ID - Amperes 70 ID - Amperes 10V 60 7V 50 40 6V 30 9V 200 8V 150 100 7V 50 6V 20 5V 10 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0 0.6 1 2 3 Fig. 3. Output Characteristics @ 150ºC 8 1.8 RDS(on) - Normalized ID - Amperes 7 VGS = 10V 2.0 60 7V 50 40 6V 30 20 5V I D = 100A 1.6 I D = 50A 1.4 1.2 1.0 0.8 10 0 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 2.6 VGS = 10V 2.4 External Lead Current Limit 80 15V - - - - 2.2 70 TJ = 175ºC 2.0 ID - Amperes RDS(on) - Normalized 6 2.2 VGS = 15V 10V 9V 8V 70 5 Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature 90 80 4 VDS - Volts VDS - Volts 1.8 1.6 1.4 60 50 40 30 1.2 TJ = 25ºC 1.0 20 10 0.8 0.6 0 0 50 100 150 200 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 250 300 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA100N04T2 IXTP100N04T2 Fig. 8. Transconductance Fig. 7. Input Admittance 65 100 55 80 50 70 25ºC 45 g f s - Siemens ID - Amperes TJ = - 40ºC 60 90 60 50 40 TJ = 150ºC 25ºC - 40ºC 30 20 40 35 150ºC 30 25 20 15 10 10 5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 100 110 Fig. 10. Gate Charge 270 10 240 9 VDS = 20V I D = 50A 8 210 I G = 10mA 7 180 VGS - Volts IS - Amperes 50 ID - Amperes 150 120 90 TJ = 150ºC 6 5 4 3 60 TJ = 25ºC 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 1.5 2 4 6 8 10 12 14 16 18 20 22 24 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 26 1,000 10,000 Ciss 1,000 I D - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 100 25µs 100 100µs 1ms 10 Crss DC TJ = 175ºC TC = 25ºC Single Pulse f = 1 MHz 10 10ms 100ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 VDS - Volts 100 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 7.0 7.0 RG = 5Ω 6.5 VDS = 20V 5.5 5.0 I 4.5 4.0 I D = 100A D VGS = 10V VDS = 20V 6.0 t r - Nanoseconds t r - Nanoseconds 6.0 RG = 5Ω 6.5 VGS = 10V = 50A 5.0 4.5 4.0 3.5 3.5 3.0 3.0 2.5 TJ = 125ºC 5.5 TJ = 25ºC 2.5 25 35 45 55 65 75 85 95 105 115 125 20 30 40 50 TJ - Degrees Centigrade 7.0 14 5.5 90 100 13 I D = 50A, 100A 5.0 12 4.5 11 4.0 23 13 tf 12 RG = 5Ω, VGS = 10V 22 21 11 VDS = 20V 20 td(off) - - - - 10 19 9 18 I D = 100A 8 17 7 16 I D = 50A 6 15 I D = 100A 5 10 14 4 3.5 6 8 10 12 14 16 18 13 3 9 4 25 20 35 45 55 RG - Ohms tf 80 26 70 24 14 22 12 20 TJ = 125ºC 10 18 8 16 6 14 TJ = 25ºC 4 2 30 40 50 60 85 95 105 115 12 125 70 80 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 90 80 tf td(off) - - - - 70 TJ = 125ºC, VGS = 10V VDS = 20V 60 60 50 50 I D = 50A 40 40 30 30 I D = 100A 20 20 12 10 10 10 100 0 0 4 6 8 10 12 RG - Ohms 14 16 18 20 t d(off) - Nanoseconds VDS = 20V 28 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 5Ω, VGS = 10V 20 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance t f - Nanoseconds 20 16 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 18 t d(off) - Nanoseconds VDS = 20V t f - Nanoseconds 15 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 6.0 80 14 16 tr 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 6.5 60 ID - Amperes IXTA100N04T2 IXTP100N04T2 Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_100N04T2(V2) 4-23-08