IXYS IXTP5N60P

PolarHVTM
Power MOSFET
IXTA 5N60P
IXTP 5N60P
VDSS = 600
ID25
=
5
RDS(on) ≤ 1.7
V
A
Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
VGSS
VGSM
Continuous
Transient
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 18 Ω
PD
TC = 25°C
Maximum Ratings
600
V
600
V
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
± 30
± 40
V
V
5
10
A
A
5
20
360
A
mJ
mJ
10
V/ns
100
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
3
g
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
(TO-220)
TO-220
TO-263
TO-263 (IXTA)
G
(TAB)
TO-220 (IXTP)
G
BVDSS
VGS = 0 V, ID = 250 μA
600
VGS(th)
VDS = VGS, ID = 50μA
3.0
IGSS
VGS = ±30 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
(TAB)
D = Drain
TAB = Drain
Features
z
Characteristic Values
Min. Typ.
Max.
D S
G = Gate
S = Source
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
S
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
5.5
V
±100
nA
5
50
μA
μA
1.7
Ω
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99426E(04/06)
IXTA 5N60P
IXTP 5N60P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
3.0
5.0
S
750
pF
78
pF
Crss
6.3
pF
td(on)
22
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
24
ns
td(off)
RG = 18 Ω (External)
55
ns
17
ns
14.2
nC
4.8
nC
4.8
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
1.25 °C/W
RthJC
RthCS
TO-263 (IXTA) Outline
(TO-220)
Source-Drain Diode
°C/W
0.25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
5
A
ISM
Repetitive
15
A
VSD
IF = IS, VGS = 0 V, IF = 5 A, -di/dt = 100 A/μs
1.5
V
trr
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
500
TO-220 (IXTP) Outline
ns
Pins: 1 - Gate
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
2 - Drain
4 - Drain
IXTA 5N60P
IXTP 5N60P
Fig. 1. Output Characte ris tics
Fig. 2. Exte nde d Output Characte ris tics
@ 25º C
@ 25º C
5
10
V GS = 10V
4.5
V GS = 10V
9
8V
8V
8
4
7
I D - Amperes
I D - Amperes
3.5
7V
3
2.5
2
6V
1.5
5
4
3
1
2
0.5
1
0
0
0
1
2
3
4
5
6
7
7V
6
6V
0
8
3
6
9
V D S - V olts
18
21
24
27
30
Fig. 4. RDS(on ) Norm alize d to 0.5 ID25
V alue vs . Junction Te m pe ratur e
@ 125º C
5
2.6
V GS = 10V
4.5
2.4
8V
7V
V GS = 10V
2.2
R D S ( o n ) - Normalized
4
I D - Amperes
15
V D S - V olts
Fig. 3. Output Characte ris tics
3.5
3
6V
2.5
2
1.5
1
5V
0.5
2
1.8
1.6
I D = 5A
1.4
1.2
I D = 2.5A
1
0.8
0.6
0
0.4
0
2
4
6
8
10
12
14
-50
16
-25
V D S - V olts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Dr ain Curr e nt vs . Cas e
Te m pe r ature
Fig. 5. RDS(on) Nor m alize d to
0.5 ID25 V alue vs . ID
5.5
2.8
2.6
5.0
V GS = 10V
4.5
2.4
2.2
4.0
TJ = 125 º C
I D - Amperes
R D S ( o n ) - Normalized
12
2
1.8
1.6
1.4
3.5
3.0
2.5
2.0
1.5
1.2
1.0
TJ = 25 º C
1
0.5
0.8
0.0
0
1
2
3
4
5
6
I D - A mperes
© 2006 IXYS All rights reserved
7
8
9
10
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTA 5N60P
IXTP 5N60P
Fig. 8. Tr ans conductance
Fig. 7. Input Adm ittance
6
9
8
5
25 º C
- Siemens
-40 º C
fs
4
TJ = 125 º C
3
2
6
5
4
T J = -40 º C
3
g
I D - Amperes
7
25 º C
125 º C
2
1
1
0
0
4
4.5
5
5.5
6
6.5
0
7
1
2
V G S - V olts
Fig. 9. Source Curr e nt vs .
Sour ce -To-Dr ain V oltage
4
5
6
Fig. 10. Gate Char ge
14
10
9
V DS = 300V
8
I D = 2.5A
7
I G = 10m A
12
V G S - Volts
10
I S - Amperes
3
I D - A mperes
8
TJ = 125 º C
6
4
6
5
4
3
TJ = 25 º C
2
2
1
0
0
0.5
0.6
0.7
0.8
0.9
0
2
4
V S D - V olts
6
Q
G
8
10
12
14
16
- nanoCoulombs
Fig. 12. M axim um Tr ans ie nt The r m al
Re s is tance
Fig. 11. Capacitance
10000
10.00
1000
R ( t h ) J C - ºC / W
Capacitance - picoFarads
f = 1MH z
C is s
100
C os s
1.00
0.10
10
C rs s
1
0.01
0
5
10
15
20
25
30
35
40
V D S - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10