Preliminary Technical Information IXTH250N075T IXTQ250N075T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 75 V = 250 A Ω ≤ 4.0 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ VGSM 75 75 V V Transient ± 20 V ID25 ILRMS IDM TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM 250 75 560 A A A IAR EAS TC = 25° C TC = 25° C 40 1.5 A J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤175° C, RG = 3.3 Ω 3 V/ns PD TC = 25° C 550 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque Weight TO-3P TO-247 1.13 / 10 Nm/lb.in. 5.5 6 Symbol Test Conditions (TJ = 25° C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 75 VGS(th) VDS = VGS, ID = 250 µA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 50 A, Notes 1, 2 V TJ = 150° C 3.3 4.0 V ± 200 nA 5 250 µA µA 4.0 mΩ G D (TAB) S TO-3P (IXTQ) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99637(11/06) © 2006 IXYS CORPORATION All rights reserved IXTH250N075T IXTQ250N075T Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 75 122 S 9900 pF Ciss Coss TO-247AD Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Max. 1330 pF 285 pF 32 ns C rss td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A 50 ns td(off) RG = 3.3 Ω (External) 58 ns 45 ns 200 nC 50 nC 60 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 1 RthCH Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Source-Drain Diode Symbol Test Conditions TJ = 25° C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0 V 250 A ISM Pulse width limited by TJM 560 A VSD IF = 50 A, VGS = 0 V, Note 1 1.0 V t rr IF = 50 A, -di/dt = 100 A/µs 80 ns 2 - Drain Tab - Drain Dim. °C/W 0.25 3 Terminals: 1 - Gate 3 - Source 0.27 °C/W RthJC 2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline VR = 25 V, VGS = 0 V Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTH250N075T IXTQ250N075T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 250 350 VGS = 10V 9V 8V 225 200 7V 150 250 I D - Amperes 175 I D - Amperes VGS = 10V 9V 8V 300 6V 125 100 75 7V 200 6V 150 100 50 5V 50 5V 25 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 0.5 1 1.5 VDS - Volts 250 3 3.5 4 2.4 VGS = 10V 9V 8V 225 200 VGS = 10V 2.2 2.0 RDS(on) - Normalized 7V 175 I D - Amperes 2.5 Fig. 4. RDS(on) Normalized to ID = 125A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 150 6V 125 100 75 5V 50 1.8 I D = 250A 1.6 I D = 125A 1.4 1.2 1.0 0.8 25 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 125A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.6 90 TJ = 175ºC 2.4 External Lead Current Limit 80 2.2 70 2 I D - Amperes RDS(on) - Normalized 2 VDS - Volts VGS = 10V 15V - - - - 1.8 1.6 1.4 60 50 40 30 1.2 20 TJ = 25ºC 10 1 0 0.8 0 50 100 150 200 250 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH250N075T IXTQ250N075T Fig. 8. Transconductance Fig. 7. Input Admittance 250 180 225 160 200 140 g f s - Siemens ID - Amperes 175 150 125 TJ = 150ºC 25ºC -40ºC 100 TJ = - 40ºC 25ºC 120 100 150ºC 80 60 75 40 50 20 25 0 0 3 3.5 4 4.5 5 5.5 6 0 6.5 25 50 75 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 125 150 175 200 225 250 160 180 200 Fig. 10. Gate Charge 300 10 VDS = 37.5V 9 250 I D = 25A 8 I G = 10mA 7 200 150 VGS - Volts IS - Amperes 100 I D - Amperes TJ = 150ºC 100 TJ = 25ºC 6 5 4 3 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1.3 20 40 60 80 100 120 140 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 C iss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz C oss 1,000 0.10 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH250N075T IXTQ250N075T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 55 50 RG = 3.3Ω 47 VGS = 10V 50 TJ = 25ºC VDS = 37.5V 44 t r - Nanoseconds t r - Nanoseconds 53 41 38 35 32 I D = 50A 45 40 RG = 3.3Ω VGS = 10V 35 VDS = 37.5V 30 29 TJ = 125ºC I D = 25A 26 25 23 20 20 25 35 45 55 65 75 85 95 105 115 24 125 26 28 30 32 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance td(on) - - - - 80 TJ = 125ºC, VGS = 10V 70 120 65 100 60 80 55 60 50 40 t f - Nanoseconds 75 I D = 50A, 25A 140 45 20 40 0 35 2 4 6 8 10 12 14 16 18 td(off) - - - - 98 RG = 3.3Ω, VGS = 10V 94 50 VDS = 37.5V 90 49 86 48 82 47 74 45 70 44 VDS = 37.5V 62 42 58 41 54 95 220 90 200 35 45 55 65 75 85 95 105 115 50 125 48 80 46 75 44 70 65 390 td(off) - - - - tf 360 TJ = 125ºC, VGS = 10V 330 VDS = 37.5V 180 300 I D = 25A 160 270 140 240 I D = 50A 120 210 100 180 80 150 40 60 60 120 38 55 40 90 50 20 36 38 40 42 44 46 48 50 I D - Amperes © 2006 IXYS CORPORATION All rights reserved t d ( o f f ) - Nanoseconds 85 TJ = 25ºC, 125ºC 66 I D = 50A 43 240 t f - Nanoseconds RG = 3.3Ω, VGS = 10V 78 I D = 25A 46 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 100 td(off) - - - - 24 26 28 30 32 34 36 50 TJ - Degrees Centigrade t d ( o f f ) - Nanoseconds t f - Nanoseconds 48 tf 25 50 42 46 51 40 20 56 52 44 102 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 54 42 52 RG - Ohms tf 40 t d ( o f f ) - Nanoseconds VDS = 37.5V t d ( o n ) - Nanoseconds t r - Nanoseconds 160 38 53 85 180 36 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 200 tr 34 I D - Amperes 60 2 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_250N075T (6V) 8-31-08-A.xls