MUBW30-12A6K Converter - Brake - Inverter Module (CBI 1) NPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM =1600 V VCES =1200 V VCES =1200 V IDAVM25= 130 A IC25 IFSM = 19 A IC25 = 30 A = 320 A VCE(sat)= 2.9 V VCE(sat)= 3V Preliminary data Part name (Marking on product) MUBW30-12A6K E72873 Pin configuration see outlines. Features: Application: Package: •High level of integration - only one power semiconductor module required for the whole drive •Inverter with NPT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current •Epitaxial free wheeling diodes with hiperfast and soft reverse recovery •Industry standard package with insu lated copper base plate and soldering pins for PCB mounting •Temperature sense included AC motor drives with •UL registered •Industry standard E1-pack •Input from single or three phase grid •Three phase synchronous or asynchronous motor •Electric braking operation IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -5 MUBW30-12A6K Ouput Inverter T1 - T6 Ratings Symbol Definitions VCES collector emitter voltage Conditions VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 30 21 A A TC = 25°C 130 W collector emitter saturation voltage IC = 30 A; VGE = 15 V TVJ= 25°C TVJ=125°C 3.8 V V VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ= 25°C 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C 1 mA mA IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V 200 nA Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 17.5 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM reverse bias safe operating area tSC (SCSOA) TVJ = 25°C to 150°C 3.0 3.4 4.5 1.5 1000 pF 70 nC 100 80 500 70 2.3 1.8 ns ns ns ns mJ mJ RBSOA; VGE = ±15 V; RG = 82 W L = 100 µH; clamped induct. load TVJ=125°C VCEmax = VCES - LS·di/dt 45 A short circuit safe operating area VCE = 1200 V; VGE = ±15 V; RG = 82 W; non-repetitive 10 µs RthJC thermal resistance junction to case (per IGBT) RthCH thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 82 W TVJ=125°C TVJ = 125°C 0.95 0.35 K/W K/W Output Inverter D1 - D6 Ratings Symbol Definitions Conditions max. Unit VRRM max. repetitve reverse voltage TVJ=150°C min. typ. 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 49 32 A A VF forward voltage IF = 30 A; VGE = 0 V TVJ= 25°C TVJ=125°C 2.9 2.0 V V IRM trr Erec(off) max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -500 A/µs IF = 30 A; VGE = 0 V TVJ=125°C 27 150 tbd A ns µJ RthJC thermal resistance junction to case (per diode) RthCH thermal resistance case to heatsink (per diode) 0.9 0.3 K/W K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -5 MUBW30-12A6K Brake Chopper T7 Ratings Symbol Definitions Conditions VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient IC25 IC80 collector current Ptot total power dissipation VCE(sat) min. typ. max. Unit 1200 V ±20 ±30 V V TC = 25°C TC = 80°C 19 13 A A TC = 25°C 90 W collector emitter saturation voltage IC = 15 A; VGE = 15 V TVJ= 25°C TVJ=125°C 3.4 V V VGE(th) gate emitter threshold voltage IC = 0.4 mA; VGE = VCE TVJ= 25°C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ= 25°C TVJ=125°C IGES gate emitter leakage current VCE = 0 V; VGE = ±20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse ICM reverse bias safe operating area tSC (SCSOA) TVJ = 25°C to 150°C 2.9 3.5 4.5 6.5 V 0.5 mA mA 100 nA 0.8 600 pF 45 nC 45 40 290 60 1.2 1.1 ns ns ns ns mJ mJ RBSOA; VGE = ±15 V; RG = 82 W L = 100 µH; clamped induct. load TVJ=125°C VCEmax = VCES - LS·di/dt 20 A short circuit safe operating area VCE = 720 V; VGE = ±15 V; RG = 82 W; non-repetitive 10 µs RthJC thermal resistance junction to case (per IGBT) RthCH thermal resistance case to heatsink (per IGBT) inductive load VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 W TVJ=125°C TVJ = 125°C 1.37 0.45 K/W K/W Brake Chopper D7 Ratings typ. max. Unit TVJ=150°C 1200 V TC = 25°C TC = 80°C 15 10 A A IF = 15 A; VGE = 0 V TVJ= 25°C TVJ=125°C 3.5 2.0 V V VR = VRRM TVJ= 25°C TVJ=125°C 0.06 0.2 mA mA max. reverse recovery current reverse recovery time VR = 600 V; IF = 10 A diF /dt = -400 A/µs TVJ=125°C 13 110 A ns RthJC thermal resistance junction to case (per diode) RthCH thermal resistance case to heatsink (per diode) Symbol Definitions Conditions VRRM max. repetitive reverse voltage IF25 IF80 forward current VF forward voltage IR reverse current IRM trr min. 2.5 0.05 K/W K/W TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -5 MUBW30-12A6K Input Rectifier Bridge D8 - D13 Symbol Definitions Conditions VRRM max. repetitive reverse voltage IFAV IDAVM IFSM average forward current max. average DC output current max. surge forward current sine 180° rectangular; d = 1/3; bridge t = 10 ms; sine 50 Hz Ptot total power dissipation Symbol Conditions Maximum Ratings 1600 V TC = 80°C TC = 80°C TC = 25°C 31 89 320 A A A TC = 25°C 80 W Characteristic Values min. typ. max. 1.35 V V 0.02 mA mA 1.4 K/W VF forward voltage IF = 30 A TVJ = 25°C TVJ = 125°C 1.0 1.1 IR reverse current VR = VRRM TVJ = 25°C TVJ = 125°C 0.4 RthJC thermal resistance junction to case (per diode) TVJ = 25°C RthCH thermal resistance case to heatsink (per diode) 0.45 Ratings typ. max. K/W Temperature Sensor NTC Symbol Definitions Conditions R25 B25/85 resistance Symbol Definitions Conditions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage IISOL < 1 mA; 50/60 Hz Md mounting torque (M4) dS dA creep distance on surface strike distance through air min. TC = 25°C 4.45 4.7 3510 5.0 Unit kW K Module min. Ratings typ. max. Unit 125 150 125 °C °C °C 2500 V~ 2.2 Nm -40 -40 2.0 12.7 12.7 Weight mm mm 40 g Equivalent Circuits for Simulation I V0 R0 min. Ratings typ. max. Symbol Definitions Conditions V0 R0 rectifier diode D8 - D13 TVJ=125°C 0.90 9 Unit V mW V0 R0 IGBT T1 - T6 TVJ=125°C tbd tbd V mW V0 R0 free wheeling diode D1 - D6 TVJ=125°C 1.5 14 V mW V0 R0 IGBT T7 TVJ=125°C 1.5 120 V mW V0 R0 free wheeling diode D7 TVJ=125°C 1.46 63 V mW TC = 25°C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20071113a -5 MUBW30-12A6K Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Ordering Part Name Standard MUBW 30-12A6K Marking on Product Delivering Mode Base Qty Ordering Code MUBW30-12A6K IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Box 10 499 854 20071113a -5