VVZB 135 VRRM = 1600 V IdAVM = 135 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 10 + 11 13 16 15 14 Type 12 19 + 20 NTC V 1600 6+7 4+5 2+3 VVZB 135-16 NO1 1 17 8+9 E72873 18 21+22 See outline drawing for pin arrangement Conditions VRRM IdAVM TC = 85°C; sinusoidal 120° 135 IFSM TVJ = 45°C; t = 10 ms; VR = 0 V TVJ = 150°C; t = 10 ms; VR = 0 V 700 610 I2t TVJ = 45°C; t = 10 ms; VR = 0 V TVJ = 150°C; t = 10 ms; VR = 0 V u s e TVJ = TVJM; repetitive; IT = 150 A f = 50 Hz; tP = 200 µs VD = 2/3 VDRM; IG = 0.45 A; non repetitive; IT = Id(AV)/3 diG/dt = 0.45 A/µs TVJ = TVJM; VDR = 2/3 VDRM; RGK = ∞; method 1 (linear voltage rise) PGM TVJ = TVJM; tP = 30 µs IT = Id(AV)/3; tP = 300 µs h (dv/dt)cr p PGAVM TVJ = 25°C to 150°C Continuous IC25 IC80 TC = 25°C; DC TC = 80°C; DC IGBT VCES VGE A A -o TC = 25°C per diode a (di/dt)cr V A 1600 Rectifier Bridge Ptot Maximum Ratings 190 W 100 A/µs 500 A/µs 1000 V/µs 10 5 W W 0.5 W 1200 ± 20 V V Recommended replacement: 95 67 A A VVZB 135-16ioXT A Ptot TC = 25°C 380 W 1200 27 38 tbd V A A A TVJ = 45°C; t = 10 ms 200 A TC = 25°C 130 W Ptot Fast Recovery Diode 100 IFSM Applications A2s A2s tp = Pulse width limited by TVJM TC = 80°C; rectangular d = 0.5 TC = 80°C; rectangular d = 0.5 TC = 80°C; tP = 10 µs; f = 5 kHz • Soldering connections for PCB mounting • Convenient package outline • Thermistor • Isolation voltage 2500 V~ 2450 1860 ICM VRRM IFAV IFRMS IFRM Features t Symbol • Drive Inverters with brake system Advantages • 2 functions in one package • Easy to mount with two screws • Suitable for wave soldering • High temperature and power cycling capability Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20070912a 1-5 VVZB 135 Conditions IR, ID VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = 150°C IF = 80 A; TVJ = 25°C Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.1 mA 20 mA V for power-loss calculations only TVJ = 150°C 0.85 7.1 V mΩ VD = 6 V; 1.5 1.6 78 200 V V mA mA 0.2 5 V mA VD = 6 V; tG = 10 µs; diG/dt = 0.45 A/µs; IG = 0.45 A 450 mA IH TVJ = TVJM; VD = 6 V; RGK = ∞ 100 mA tgd VD = ½ VDRM; diG/dt = 0.45 A/µs; IG = 0.45 A 2 µs tq TVJ = TVJM; VR = 100 V; VD = 2/3 VDRM; tP = 200 µs; dv/dt = 15 V/µs; IT = 20 A; -di/dt = 10 A/µs RthJC RthCH per diode VBR(CES) VGE(th) VGS = 0 V; IC = 0.1 mA IC = 8 mA ICES VCE = 1200 V; TVJ = 25°C VCE = 0,8•VCES; TVJ = 125°C VCEsat VGE = 15 V; IC = 100 A tSC (SCSOA) VGE = 15 V; VCE = 900 V; TVJ = 125°C RBSOA VGE = 15 V; VCE = 1200 V; TVJ = 125°C; clamped inductive load; L = 100 µH; RG = 22 Ω TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 150 0.2 1200 4.5 a VCE = 25 V; f = 1 MHz, VGE = 0 V td(on) td(off) Eon Eoff VCE = 720 V; IC = 50 A VGE = 15 V; RG = 22 Ω Inductive load; L = 100 µH; TVJ = 125°C p Cies RthJC RthCH IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved µs u Rectifier Bridge IL IGBT VGD IGD = 25°C = -40°C = 25°C = -40°C -o VD = 6 V; IGT TVJ TVJ TVJ TVJ e VGT s VT0 rT t 1.43 h VF, VT Rectifier Diodes Symbol 0.65 K/W K/W 6.45 V V 0.1 0.5 mA mA 3.5 V 10 µs 100 A 3.8 nF 150 680 6 5 ns ns mJ mJ 0.1 0.33 K/W K/W 20070912a 2-5 VVZB 135 Symbol Conditions IR VT0 rT IRM trr VR = VRRM; TVJ = 25°C VR = 1200 V; TVJ = 125°C Fast Recovery Diode VF Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.25 mA 1 mA IF = 30 A; TVJ = 25°C For power-loss calculations only TVJ = 150°C NTC V 1.3 16 V mΩ 11 A IF = 50 A; -diF/dt = 100 A/µs; VR = 100 V 5.5 IF = 1 A; -diF/dt = 200 A/µs; VR = 30 V 40 ns 0.25 0.9 K/W K/W RthJC RthCH R25 B25/50 2.76 ( T1 R(T) = R25 • e B25/100 1 298K ) 4.75 5.0 5.25 3375 10 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C V VG 3 2 1 6 5 1 4 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 0.1 kΩ K 1 10 100 mA 1000 IG Fig. 1 Gate trigger characteristics Conditions Maximum Ratings 1000 2500 3000 V~ V~ tgd 2.7...3.3 Nm 12.7 9.6 50 mm mm m/s2 180 g u Mounting torque dS dA a Creep distance on surface Strike distance in air Maximum allowable acceleration Weight typ. TVJ = 25°C μs 100 typ. Limit 10 1 10 100 IG mA 1000 Fig. 2 Gate trigger delay time p h a Dimensions in mm (1 mm = 0.0394") s Md -o 50/60 Hz; t = 1 min IISOL ≤ 1 mA; t = 1 s e VISOL °C °C °C -40...+150 150 -40...+125 Module TVJ TVJM Tstg t Symbol IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20070912a 3-5 VVZB 135 150 600 A 10000 50 Hz 80 % VRRM A 500 125 IT VR = 0 V 2 It 2 As ITSM 400 100 TVJ =45°C TVJ = 45°C 75 300 50 1000 TVJ =150°C 200 TVJ =125°C TVJ =150°C 100 25 TVJ = 25°C 0 0.0 0.5 1.0 1.5 V 0 0.001 2.0 100 0.01 s 0.1 1 ms 10 1 t VT Fig. 3 Forward current versus voltage drop per leg t Fig. 5 I²t versus time Fig. 4 Surge overload current 250 t (per thyristor/diode) 150 RthKA K/W = 0.2 u W 0.5 200 Ptot A 120 -o ITAVM 150 1 100 60 e 1.5 90 2 3 30 s 50 0 30 60 90 IRMS 120 A 0 25 0 50 75 100 TA 125 150 h 0 a 5 Fig. 6 Power dissipation versus direct output current and ambient temperature 0 25 50 75 100 125 150 TC Fig. 7 Maximum forward current at case temperature p 0.7 K/W 0.6 0.5 ZthJC 0.4 0.3 Constants for ZthJC calculation: 0.2 0.1 0.0 0.001 VVZB 135 0.01 0.1 1 s Rthi / (K/W) ti / (s) 0.03 0.083 0.361 0.176 0.0005 0.008 0.094 0.45 10 t Fig. 8 Transient thermal impedance junction to case (per thyristor/diode) IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20070912a 4-5 VVZB 135 150 90 A A 120 TVJ = 125°C IF TVJ = 25°C IC 60 TVJ = 125°C 90 60 30 TVJ = 25°C 30 VGE = 15V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 3.5 V 4.0 0.5 1.0 1.5 2.0 2.5 3.0 V 3.5 VF VCE Fig. 9 Typ. output characteristics Fig. 10 Typ. forward characteristics of free wheeling diode 900 ns mJ Eoff td(off) 6 600 t 10 mJ Eoff t 1000 td(off) ns 8 800 u 9 t 6 300 RG = 22 Ω TVJ = 125°C Eoff tf 20 40 60 2 0 0 s 0 0 100 A 120 80 0 h Fig. 11 Typ. turn off energy and switching times versus collector current 0.1 10 20 30 400 200 tf 0 50 Ω 60 40 Fig. 12 Typ. turn off energy and switching times versus gate resistor diode p K/W VCE = 720 V VGE = ±15 V IC = 50 A TVJ = 125°C RG a IC 1 Eoff 4 e 3 -o VCE = 720 V VGE = ±15 V 600 IGBT 10000 ZthJC Ω 0.01 R 1000 0.001 single pulse 0.0001 0.00001 0.0001 0.001 VVZB 135 100 0.01 0.1 1 s 10 t Fig. 13 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 0 25 50 75 100 125 °C 150 T Fig. 14 Typ. thermistor resistance versus temperature 20070912a 5-5