Product Specification 2SC4060 Silicon NPN Power Transistor DESCRIPTION ・High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min) ・High Switching Speed ・High Reliability APPLICATIONS ・Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 40 A IB Base Current-Continuous 7 A IBM Base Current-Peak 14 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Website：www.jmnic.com Product Specification 2SC4060 Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 450V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 10A; VCE= 5V 10 hFE-2 DC Current Gain IC= 1mA; VCE= 5V 5 Current-Gain—Bandwidth Product IC= 2A; VCE= 10V fT 450 UNIT V 20 MHz Switching Times ton Turn-on Time tstg Storage Time tf IC= 10A,IB1= 2A; IB2= -4A RL= 15Ω; VBB2= 4V Fall Time Website：www.jmnic.com 2 0.5 μs 2.0 μs 0.2 μs