Power Transistors www.jmnic.com 2SD1271A Silicon NPN Transistors BCE Features ﹒For Power Switching. ﹒With TO-220Fa package ﹒Complement to type 2SB946 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V ICP Peak collector current 15 A IC Collector current 7 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature TO-220Fa -55~150 Electrical Characteristics Tc=25 SYMBOL ICBO PARAMETER Collector cut-off current CONDITIONS VCB=100V; IE=0 VEB=5V; IC=0 IEBO Emitter cut-off current VCBO Collector-base breakdown voltage VCEO Collector-emitter breakdown voltage VEBO Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages hFE-1 Forward current transfer ratio hFE-2 IC=10mA; IB=0 60 IC=3A; VCE=2V IC=5A; IB=0.25A VBE(sat)2 Base-emitter saturation voltages IC=0.5A; VCE=10V,f=10MHz hFE-2 Classification R 60-120 Q 90-180 P 130-260 JMnic UNIT uA 50 uA V 0.5 45 Base-emitter saturation voltages MAX 10 100 IC=0.1A; VCE=2V Forward current transfer ratio Transition frepuency Typ. IC=5A; IB=0.25A VBE(sat)1 fT MIN V 260 1.5 30 V MHz