SEMICONDUCTOR KDR582S TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE FOR HIGH SPEED SWITCHING. FEATURES ・Low reverse current, low capacitance. E B L D L 3 H G A 2 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VR 4 V Reverse Voltage VR 4 V Forward Current IF 130 mA Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range P J N MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C P DIM A B C D E G H J K L M N P SOT-23 Marking Lot No. Type Name MC ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VF Forward Voltage IR Reverse Current TEST CONDITION MIN. TYP. MAX. IF=0.1mA 0.2 - 0.35 IF=1mA 0.25 - 0.45 IF=10mA 0.35 - 0.6 VR=3V - - 0.25 VR=3V, TA=60℃ - - 1.25 Total Capacitance CT VR=0V, f=1MHz 0.4 - 0.75 Series Resistance rS IF=5mA, f=10kHz - - 15 2009. 12. 9 Revision No : 0 UNIT V μA pF Ω 1/2 KDR582S CT - VR IR - VR 103 f=1MHz Reverse Current IR (µA) Total Capacitance CT (pF) 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 102 101 100 Ta=25 C 0 2 4 6 8 10 Reverse Current VR (V) Reverse Voltage VR (V) V F - IF 100 Forward Current IF (mA) f=1MHz 10-1 10-2 0 0.1 0.2 0.3 0.4 0.5 Forward Voltage VF (V) 2009. 12. 9 Revision No : 0 2/2