KEC KMA3D0N20SA_12

SEMICONDUCTOR
KMA3D0N20SA
TECHNICAL DATA
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
E
B
FEATURES
L
D
L
2
H
A
3
G
・VDSS=20V, ID=3A
・Drain to Source on-state Resistance
1
RDS(ON)=55mΩ(Max.) @ VGS=4.5V
Q
RDS(ON)=110mΩ(Max.) @ VGS=2.5V
P
P
K
J
N
C
・Super Hige Dense Cell Design
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
2.93 +_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
M
SOT-23
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
N-Ch
UNIT
Drain to Source Voltage
VDSS
20
V
Gate to Source Voltage
VGSS
±12
V
[email protected]=25℃
(Note1)
ID
3
Pulsed
(Note1)
IDP
12
Ta=25℃
(Note1)
Ta=70℃
(Note1)
Drain Current
A
1.25
PD
Drain Power Dissipation
W
0.8
Tj
150
℃
Tstg
-55~150
℃
RthJA
100
℃/W
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
KNB
(Note1)
Note1) Surface Mounted on 1”×1”FR4 Board, t≤5sec.
PIN CONNECTION (TOP VIEW)
D
3
3
2009. 8. 17
2
1
G
S
2
Revision No : 2
1
1/4
KMA3D0N20SA
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
20
-
-
V
Static
Drain to Source Breakdown Voltage
BVDSS
IDS=250μA, VGS=0V,
Drain Cut-off Current
IDSS
VGS=0V, VDS=16V
-
-
1
μA
Gate to Source Leakage Current
IGSS
VGS=±10V, VDS=0V
-
-
±100
nA
Gate to Source Threshold Voltage
Vth
VDS=VGS, ID=250μA
0.5
0.8
1.5
V
VGS=4.5V, ID=2.5A
(Note2)
-
38
55
VGS=2.5V, ID=1A
(Note2)
-
55
110
VGS=4.5V, VDS=5V
(Note2)
12
-
-
A
VDS=5V, ID=2.5A
(Note2)
-
6
-
S
-
280
-
-
64
-
-
34
-
-
4.0
-
-
0.9
-
RDS(ON)
Drain to Source On Resistance
ID(ON)
On State Drain Current
gfs
Forward Transconductance
mΩ
Dynamic
Input Capaclitance
Ciss
Ouput Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
VDS=10V, VGS= 0V, f=1MHz
VDS=10V, VGS=4.5V,
pF
Gate to Source Charge
Qgs
Gate to Drain Charge
Qgd
-
0.9
-
Turn-On Delay Time
td(on)
-
6.3
-
-
7.0
-
-
7.3
-
-
6.2
-
-
-
3.0
A
-
-
12
A
-
-
1.2
V
tr
Turn-On Rise Time
ID=2.5A
(Note2)
VDD=10V, VGS=4.5V
nC
ns
td(off)
Turn-Off Delay Time
ID=1A, RG=6Ω
(Note2)
tf
Turn-Off Fall Time
Source-Drain Diode Ratings
Continuous Source Current
IS
-
Pulsed Source Current
ISP
-
Source to Drain Forward Voltage
VSDF
VGS=0V, IS=1.25A
(Note2)
NOTE 2) Pulse Test : Pulse width <300㎲ , Duty cycle < 2%
2009. 8. 17
Revision No : 2
2/4
KMA3D0N20SA
2009. 8. 17
Revision No : 2
3/4
KMA3D0N20SA
2009. 8. 17
Revision No : 2
4/4