SEMICONDUCTOR KTA1046 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. FEATURES ・Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. ・Complementary to KTC2026. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V Collector Current IC -3 A Base Current IB -0.5 A Collector Power Ta=25℃ Dissipation Tc=25℃ Junction Temperature Storage Temperature Range 2 PC W 20 Tj 150 ℃ Tstg -55～150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -1 μA Emitter Cut-off Current IEBO VEB=-7V, IC=0 - - -1 μA V(BR)CEO IC=-50mA, IB=0 -60 - - V VCE=-5V, IC=-0.5A 100 - 300 hFE(2) VCE=-5V, IC=-3A 20 - - VCE(sat) IC=-2A, IB=-0.2A - -0.25 -1.0 V Collector-Emitter Breakdown Voltage hFE(1) (Note) DC Current Gain Collector Emitter Saturation Voltage Base-Emitter Voltage VBE VCE=-5V, IC=-0.5A - -0.7 -1.0 V Transition Frequency fT VCE=-5V, IC=-0.5A - 30 - MHz VCB=-10V, IE=0, f=1MHz - 45 - pF Cob Collector Output Capacitance Switching Time Turn-on Time ton - 0.4 - Storage Time tstg - 1.7 - Fall Time tf - 0.5 - Note : hFE(1) Classification 2011. 7. 13 Y:100～200, μS GR:150～300 Revision No : 4 1/2 KTA1046 2011. 7. 13 Revision No : 4 2/2