SEMICONDUCTOR KU3600N10W TECHNICAL DATA N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES ・VDSS(Min.)= 100V, ID= 1.7A ・Drain-Source ON Resistance : RDS(ON)=0.36 Ω(max) @VGS =10V ・Qg(typ.) =4.2nC MAXIMUM RATING (Tc=25℃) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V @TC=25℃ Drain Current @TC=100℃ Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation 1.7* ID TA=25℃ 1.0* A IDP 6.4* EAS 12.4 mJ EAR 0.1 mJ dv/dt 4.5 V/ns 2.0* W 0.016 W/℃ Tj 150 ℃ Tstg -55～150 ℃ RthJA 62.5* ℃/W PD Derate above25℃ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-toAmbient * : Surface Mounted on FR4 Board (50mm×50mm, 1.0t) PIN CONNECTION 2011. 4. 7 Revision No : 0 1/6 KU3600N10W ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 100 - - V ID=250μA, Referenced to 25℃ - 0.1 - V/℃ Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA VGS=10V, ID=0.8A - 0.30 0.36 - 0.40 - 4.2 5.5 - 1.0 - - 1.5 - - 20 - - 15 - - 50 - Ω RDS(ON) Drain-Source ON Resistance VGS=6V, ID=0.8A Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time VDS=80V, ID=1.7A VGS=10V VDD=50V, ID=1.7A RG=25Ω td(off) Turn-off Delay time (Note4,5) (Note4,5) VGS=10V ns Turn-off Fall time tf - 10 - Input Capacitance Ciss - 230 320 Output Capacitance Coss - 25 - Reverse Transfer Capacitance Crss - 9.0 - - - 1 - - 4 VDS=25V, VGS=0V, f=1.0MHz nC pF Source-Drain Diode Ratings IS Continuous Source Current VGS<Vth A Pulsed Source Current ISP Diode Forward Voltage VSD IS=1.7A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=1.7A, VGS=0V, - 60 - ns Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 0.10 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 5mH, IS=1.7A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤1.7A, dI/dt≤300A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking KU3600N10W 2011. 4. 7 Revision No : 0 2/6 KU3600N10W VDS = 10V VDS = 7V, 10V VDS = 5V TC = 100℃ VDS = 4.5V TC = 25℃ 2 0 4 6 8 1.2 1.0 0.8 0.6 0.4 0.2 6 IDS=0.8A 0 2011. 4. 7 0.5 1.0 Revision No : 0 1.5 3/6 KU3600N10W Fig 7. C - VDS Fig8. Qg- VGS 103 Gate - Source Voltage VGS (V) 12 Capacitance (pF) Ciss 102 Coss Crss 101 100 0 5 10 15 20 25 30 35 ID=1.7A 10 VDS = 80V 8 6 4 2 0 0 40 1 3 2 4 5 6 7 8 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig10. ID - Tj Fig9. Safe Operation Area 102 Operation in this 1.2 1.0 101 Drain Current ID (A) Drain Current ID (A) area is limited by RDS(ON) 10µs 100µs 100 1ms 10ms 10-1 100ms Tc= 25 C Tj = 150 C 2 Single pulse 10100 0.8 0.6 0.4 0.2 DC 101 102 0 103 0 25 Drain - Source Voltage VDS (V) 50 75 100 125 150 Junction Temperature Tj ( C) Fig11. Transient Thermal Response Curve Transient Thermal Resistance 102 Duty=0.5 101 0.20 0.10 PDM 0.05 100 t1 t2 2 0.0 1 0.0 - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD e uls P gle Sin 10-1 10-5 10-4 10-3 10-2 10-1 100 101 102 103 TIME (sec) 2011. 4. 7 Revision No : 0 4/6 KU3600N10W Fig12. Gate Charge VGS 5V RL 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig13. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig14. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% td(off) 25 Ω VDS td(on) ton 10V 2011. 4. 7 tr tf toff VGS Revision No : 0 5/6 KU3600N10W Fig15. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS ISD di/dt (DUT) L IRM IS 0.5 Body Diode Reverse Current VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2011. 4. 7 VGS Revision No : 0 Body Diode Forword Voltage drop 6/6