SEMICONDUCTOR USFB13L TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. B A H G FEATURES Low Profile Surface Mount Package. C E F Low Power Loss, High Efficiency. 2 For Use in Low Voltage, High Frequency inverters, Free C E D 1 CATHODE MARK Wheeling, and Polarity Protection Applications. APPLICATION I J DIM A Switching Power Supply. MILLIMETERS _ 0.1 1.9 + _ 0.1 2.5 + _ 0.05 0.61 + _ 0.1 0.8 + _ 0.05 0.91 + _ 0.1 1.2 + _ 0.1 1.3 + _ 0.1 0.46 + _ 0.05 0.11 + _ 0.1 0.6 + B C Reversed Battery Connection Protection. D DC/DC Converter. E Cellular Phones. 1. ANODE F 2. CATHODE G H I J MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Maximum Repetitive Peak Reverse Voltage VRRM 30 V IO 1 A IFSM 22 A 667 mW Average Output Rectified Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Power Dissipation PD * Junction Temperature Tj USF Marking -40 125 Lot No. Type Name Tstg Storage Temperature Range -40 125 * Mounted on a glass epoxy board (Soldering land : 6mm 6mm) BB CATHODE MARK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL Peak Forward Voltage TEST CONDITION MIN. TYP. MAX. UNIT VFM (1) IFM=0.1A - 0.25 - VFM (2) IFM=0.7A - 0.33 0.37 VFM (3) IFM=1.0A - 0.39 - IRRM (1) VRRM=5V - 50 - A IRRM (2) VRRM=30V - 0.5 1 mA VR=10V, f=1.0MHz - 40 - pF V Repetitive Peak Reverse Current Cj Junction Capacitance 2005. 12. 1 Revision No : 2 1/3 INSTANTANEOUS FORWARD CURRENT I F (A) I F - VF 10 3 T j =125 C 1 0.3 75 C 25 C 0.1 0.03 0.01 0 0.2 0.4 0.6 0.8 1.0 AVERAGE FORWARD POWER DISSIPATION P F(AV) (W) USFB13L P F(AV) - I F(AV) 0.5 DC 0.4 180 120 0.3 α=60 0.2 RECTANGULAR WAVEFORM 0.1 0 0 0.2 0 0.4 MAXIMUM ALLOWABLE AMBIENT TEMPERATURE Ta MAX ( C) PEAK SURGE FORWARD CURRENT I FSM (A) Ta=25 C f=60Hz 20 16 12 8 4 0 140 120 80 1.4 1.6 DC 60 RECTANGULAR WAVEFORM 40 α=180 I 0 20 α F(AV) 360 CONDUCTION ANGLE α V R =15V 0 0 100 0.2 0.6 0.4 0.8 1.0 1.2 1.4 1.6 AVERAGE FORWARD CURRENT I F(AV) (A) IR - Tj 100 f =1MHz REVERSE CURRENT IR (mA) JUNCTION CAPACITANCE Cj (pF) 1.2 100 C j - VR 100 VR = 30V 20V 10 5V 10V 15V 3V 1 0.1 0.01 10 1 10 REVERSE VOLTAGE VR (V) 2005. 12. 1 1.0 DEVICE MOUNTED ON A CERAMIC BOARD (BOARD SIZE : 50mmx50mm) NUMBER OF CYCLES 1000 0.8 Ta MAX - I F(AV) 28 10 0.6 AVERAGE FORWARD CURRENT I F(AV) (A) SURGE FORWARD CURRENT (NON - REPETITIVE) 1 360 CONDUCTION ANGLE α INSTANTANEOUS FORWARD VOLTAGE VF (V) 24 α Revision No : 2 100 0 25 50 75 100 125 150 JUNCTION TEMPERATURE Tj ( C) 2/3 USFB13L PR (AV) 10000 1000 2.5 (1) Device mounted on a ceramic board Soldering land: 2.0 mm x2.0mm (2) Device mounted on glass-epoxy board Soldering land: 6.0 mm x6.0mm (3) Device mounted on glass-epoxy board Standard Soldering Pad (3) (2) 100 (1) 10 1 0.001 -VR Rectangular wave form 2.0 0 a 360 1.5 Conduction angle : a Tj=125 C DC 300 240 180 1.0 120 60 0.5 0.0 0.01 0.1 1 10 Time t (S) 2005. 12. 1 REVERSE CURRENT IR (mA) Transient thermal impedance rth (j-a) ( C /W) rth(j-a) - t Revision No : 2 100 1000 0 10 20 30 Revers voltage VR (V) 3/3