KERSEMI IRFRU9120N

IRFR/U9120N
HEXFET® Power MOSFET
l
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9120N)
Straight Lead (IRFU9120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
VDSS = -100V
RDS(on) = 0.48Ω
G
ID = -6.6A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D -P ak
T O -2 52 A A
I-P ak
T O -25 1 A A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-6.6
-4.2
-26
40
0.32
± 20
100
-6.6
4.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
1 / 10
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
3.1
50
110
°C/W
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IRFR/U9120N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-100
–––
–––
-2.0
1.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
47
28
31
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
350
110
70
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
0.48
Ω
VGS = -10V, ID = -3.9A „
-4.0
V
VDS = VGS, ID = -250µA
–––
S
VDS = -50V, ID = -4.0A†
-25
VDS = -100V, VGS = 0V
µA
-250
VDS = -80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
27
ID = -4.0A
5.0
nC
VDS = -80V
15
VGS = -10V, See Fig. 6 and 13 „†
–––
VDD = -50V
–––
ID = -4.0A
ns
–––
RG = 12 Ω
–––
RD =12 Ω, See Fig. 10 „†
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact…
S
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz, See Fig. 5†
Source-Drain Ratings and Characteristics
IS
ISM
V SD
t rr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -6.6
showing the
A
G
integral reverse
––– ––– -26
p-n junction diode.
S
––– ––– -1.6
V
TJ = 25°C, IS = -3.9A, VGS = 0V „
––– 100 150
ns
TJ = 25°C, IF = -4.0A
––– 420 630
nC
di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 13mH
RG = 25Ω, IAS = -3.9A. (See Figure 12)
ƒ ISD ≤ -4.0A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2 / 10
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
…This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
† Uses IRF9520N data and test conditions.
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IRFR/U9120N
100
100
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
1
-4.5V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
10
1
-4.5V
2.5
TJ = 25 ° C
TJ = 150 ° C
1
V DS = -50V
20µs PULSE WIDTH
5
6
7
8
9
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3 / 10
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
100
4
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
10
ID = -6.7A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFR/U9120N
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
600
Ciss
Coss
400
Crss
200
-VGS , Gate-to-Source Voltage (V)
20
800
ID = -4.0 A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
15
20
25
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
5
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
10
100us
1ms
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
0.8
1.4
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4 / 10
VDS =-80V
VDS =-50V
VDS =-20V
2.6
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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1000
IRFR/U9120N
8.0
RD
VDS
-ID , Drain Current (A)
VGS
D.U.T.
RG
6.0
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
td(on)
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 / 10
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10
IRFR/U9120N
- VV
DD
+ DD
D .U .T
RG
IA S
-20V
tp
A
D R IV E R
0.0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
250
ID
-1.7A
-2.5A
BOTTOM -3.9A
TOP
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6 / 10
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFR/U9120N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
D=
Period
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
7 / 10
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IRFR/U9120N
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
-A1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
1
2
10.42 (.410)
9.40 (.370)
LE A D A S S IG N M E N T S
1 - GATE
3
0.51 (.020)
M IN .
-B1.52 (.060)
1.15 (.045)
3X
2X
1.14 (.045)
0.76 (.030)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2 - D R A IN
3 - SOURCE
4 - D R A IN
0.58 (.023)
0.46 (.018)
M A M B
N O TE S :
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
2.28 (.090)
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O JE D E C O U TLIN E TO -252A A .
4.57 (.180)
4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP ,
S O LD E R D IP M A X. +0.16 (.006).
Part Marking Information
TO-252AA (D-Pak)
E XA M P L E : T H IS IS A N IR F R 1 2 0
W IT H A S S E M B L Y
LOT CODE 9U1P
IN T E R N A T IO N A L
R E C T IF IE R
A
IR F R
120
9U
ASSEMBLY
LOT CODE
8 / 10
F IR S T P O R T IO N
OF PART NUMBER
1P
S E C O N D P O R T IO N
OF PART NUMBER
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IRFR/U9120N
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
-A-
0.58 (.023)
0.46 (.018)
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
LE A D A S S IG N M E N T S
4
1 - GATE
2 - D R A IN
6.45 (.245)
5.68 (.224)
3 - SOURCE
4 - D R A IN
6.22 (.245)
5.97 (.235)
1.52 (.060)
1.15 (.045)
1
2
3
-B-
N O TE S :
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
2.28 (.090)
1.91 (.075)
2 C O N T R O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO J E D E C O U T LIN E T O -252A A .
9.65 (.380)
8.89 (.350)
4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP ,
S O LD E R D IP M A X. +0.16 (.006).
3X
1.14 (.045)
0.76 (.030)
2.28 (.090)
3X
1.14 (.045)
0.89 (.035)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2X
M A M B
0.58 (.023)
0.46 (.018)
Part Marking Information
TO-251AA (I-Pak)
E X A M P L E : T H IS IS A N IR F U 1 2 0
W IT H A S S E M B L Y
LO T CODE 9U1P
IN T E R N A T IO N A L
R E C T IF IE R
IR F U
120
9U
ASSEMBLY
LOT CODE
9 / 10
F IR S T P O R T IO N
OF PART NUMBER
1P
S E C O N D P O R T IO N
OF PART NUMBER
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IRFR/U9120N
Tape & Reel Information
TO-252AA
TR
TRR
1 6.3 ( .6 41 )
1 5.7 ( .6 19 )
12 .1 ( .4 7 6 )
11 .9 ( .4 6 9 )
F E E D D IR E C T IO N
TRL
16 .3 ( .64 1 )
15 .7 ( .61 9 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E E D D IR E C T IO N
NOTES :
1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R .
2 . A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
1 3 IN C H
16 m m
NO TES :
1. O U T L IN E C O N F O R M S T O E IA -4 81 .
10 / 10
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