MBR20150FCT
omponents
20736 Marilla Street Chatsworth
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Features
• High Junction Temperature Capability
•
20 Amp High Voltage
Power Schottky
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Low Leakage Current
•
•
•
•
Barrier Rectifier
150Volts
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking:type number
Maximum Ratings
•
•
•
•
ITO-220AB
Operating J unction Temperature : 150°C
Storage Temperature: - 5 0°C to +150°C
Per d iode Thermal Resistance 2.2°C/W Junction to Case
Total Thermal Resistance 1.3°C/W Junction to Case
MCC
Catalog
Number
MBR 20150 FCT
Maximum
Recurrent
Peak Reverse
Voltage
150 V
Maximum
RMS
Voltage
105V
B
L
M
C
Maximum
DC
Blocking
Voltage
150 V
D
PIN
K
1
2
A
3
E
F
O
I
G
J
N
H H
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
MBR20150FCT
Maximum
Reverse Current At
Rated DC Blocking
Voltage
IF(AV)
20 A
TC = 155 °C
IFSM
180A
8.3ms, half
sine wave
PIN 1
VF
.92V
VF
.75V
IR
25 µ A
5m A
IFM = 10A
TJ = 25°C
I FM = 10A
TJ = 125°C
TJ = 25°C
TJ = 125°C
PIN 2
PIN 3
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
INCHES
.583
.630
--.406
.100
.112
.248
.272
--.161
--.071
.512
.543
.100
--.035
--.032
.118
.134
--.189
--.130
.098
.114
--.055
MM
14.80
--2.55
6.30
----13.00
16.00
10.30
2.85
6.90
4.10
1.80
13.80
2.55
----3.00
----2.50
---
0.90
0.80
3.40
4.80
3.30
2.90
1.40
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MBR20150FCT
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
PF(av)(W)
10
9
8
7
6
5
4
3
2
1
0
IF(av)(A)
δ = 0.05
δ = 0.1
δ = 0.2
12
δ = 0.5
Rth(j-a)=Rth(j-c)
10
δ=1
8
6
Rth(j-a)=15°C/W
4
T
T
2
IF(av) (A)
0
1
2
3
4
5
6
7
δ=tp/T
8
9
δ=tp/T
tp
10 11 12
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
0
0
Tamb(°C)
tp
25
50
75
100
125
150
175
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
IM(A)
Zth(j-c)/Rth(j-c)
150
1.0
125
0.8
100
0.6
Tc=50°C
δ = 0.5
75
0.4
Tc=75°C
50
25
δ = 0.2
δ = 0.1
Tc=125°C
IM
t
t(s)
δ=0.5
0
1E-3
0.2
1E-2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
T
Single pulse
tp(s)
0.0
1E-3
δ=tp/T
1E-2
tp
1E-1
1E+0
Fig. 6: Junction capacitance versus reverse voltage
applied (typical values, per diode).
IR(µA)
C(pF)
1E+5
1000
F=1MHz
Tj=25°C
Tj=175°C
1E+4
Tj=150°C
1E+3
Tj=125°C
1E+2
100
Tj=100°C
1E+1
1E+0
1E-1
Tj=25°C
VR(V)
VR(V)
0
25
50
75
100
125
150
10
1
2
5
10
20
50
100
200
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MBR20150FCT
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 8: Thermal resistance junction to ambient versus
copper surface under tab (Epoxy printed circuit board,
copper thickness: 35µm) (STPS20150CG only).
IFM(A)
Rth(j-a) (°C/W)
100.0
80
70
Tj=125°C
Typical values
60
10.0
50
Tj=125°C
Tj=25°C
40
30
1.0
20
VFM(V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
10
1.2
1.4
1.6
1.8
0
S(cm²)
0
2
4
6
8
10
12
14
16
18
20
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