. . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • • • • 20 Amps Total (10 Amps Per Diode Leg) Guard–Ring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Guaranteed Reverse Avalanche Epoxy Meets UL94, VO at 1/8″ Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction MBR2060CT and MBR20100CT are Motorola Preferred Devices SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 60–100 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Shipped 50 units per plastic tube • Marking: B2060, B2070, B2080, B2090, B20100 4 1 1 2 3 2, 4 3 CASE 221A–06 TO–220AB PLASTIC MAXIMUM RATINGS PER DIODE LEG MBR Rating Symbol Unit 2060CT 2070CT 2080CT 2090CT 20100CT 60 70 80 90 100 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR Volts Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 Amps Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C IFRM 20 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 Amps Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 0.5 Amp Storage Temperature Tstg *65 to +150 *65 to +175 Voltage Rate of Change (Rated VR) dv/dt 10,000 V/µs RθJC RθJA 2.0 60 °C/W Operating Junction Temperature TJ °C °C THERMAL CHARACTERISTICS Maximum Thermal Resistance — Junction to Case — Junction to Ambient Device Data Rectifier www.kersemi.com 1 50 TJ = 150°C 20 IR , REVERSE CURRENT (mA) 150°C 10 100°C 175°C 5.0 3.0 TJ = 25°C 1.0 10 125°C 100°C 1.0 0.1 25°C 0.01 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 0.9 40 60 80 100 120 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode 20 RATED VOLTAGE APPLIED RqJC = 2°C/W 18 16 14 12 10 dc 8.0 6.0 SQUARE WAVE 4.0 2.0 0 110 20 0 I F(AV) , AVERAGE FORWARD CURRENT (AMPS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 120 130 140 150 140 20 (HEATSINK) RqJA = 16°C/W (NO HEATSINK) RqJA = 60°C/W 18 16 14 12 RATED VOLTAGE APPLIED 10 dc 8.0 6.0 4.0 dc SQUARE WAVE 2.0 0 160 0 60 40 20 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient 180 200 20 AVERAGE POWER (WATTS) IPK/IAV = 5.0 TA = 25°C 18 IPK/IAV = p 16 IPK/IAV = 10 14 12 dc 10 IPK/IAV = 20 8.0 SQUARE WAVE 6.0 4.0 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 AVERAGE CURRENT (AMPS) Figure 5. Average Power Dissipation and Average Current www.kersemi.com 3 –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A–06 (TO–220AB) ISSUE Y Rectifier Device Data www.kersemi.com