MBRF1030CT-G Thru. MBRF10100CT-G Voltage: 30 to 100 V Current: 10.0 A RoHS Device Features ITO-220AB -Metal of silicon rectifier, majority carrier conduction. -Guard ring for transient protection. 0.118(3.00) 0.102(2.60) 0.189(4.80) 0.173(4.40) 0.118(3.00) 0.102(2.60) 0.138(3.50) 0.122(3.10) 0.406(10.30) 0.386( 9.80) -Low power loss, high efficiency. -High current capability. -High surge capacity. 0.622(15.80) 0.583(14.80) -For use in low voltage, high frequency inverters, free wheeling,and polarity protection applications. 0.157(4.00) 0.118(3.00) Mechanical Data 0.071 MAX (1.80) 0.551(14.00) 0.511(13.00) 0.059(1.50) 0.043(1.10) -Case: ITO-220AB, molded plastic -Epoxy: UL 94-V0 rate flame retardant. 0.031(0.80) 0.020(0.50) 0.028(0.70) 0.020(0.50) 0.105(2.67) 0.095(2.41) -Polarity: As marked on the body. 0.114(2.90) 0.098(2.50) -Mounting position: Any -Weight: 2.24 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load derate current by 20%. Parameter Symbol MBRF MBRF MBRF MBRF MBRF MBRF MBRF 1030CT-G 1040CT-G 1045CT-G 1050CT-G 1060CT-G 1080CT-G 10100CT-G Unit Maximum Recurrent Peak Reverse Voltage VRRM 30 40 45 50 60 80 100 V Maximum RMS Voltage VRMS 21 28 31.5 35 42 56 70 V 30 40 45 50 60 80 100 V Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current ( See Fig.1 ) I(AV) 10 A Peak Forward Surage Current , 8.3ms Single Half Sine-Wave Super Imposed On Rated Load(JEDEC Method) IFSM 120 A 0.70 0.57 0.80 0.70 IF=5A@ TJ= 25°C Peak Forward Voltage (Note 1) IF=5A@ TJ=125°C IF=10A@ TJ= 25°C VF IF=10A@ TJ=125°C Maximum DC Reverse Current @ TJ= 25°C at Rate DC Blocking Voltage @ TJ= 125°C IR Typical Junction Capacitance (Note2) CJ Typical Thermal Resistance (Note3) Operating Temperature Range Storage Temperature Range 0.80 0.65 0.90 0.75 0.85 0.75 0.95 0.85 0.1 mA 15 170 220 3.0 RθJC V 300 pF 3.0 °C/W TJ -55 to +150 °C TSTG -55 to +175 °C NOTES: 1. 300us pulse width,2% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance junction to case. www.kersemi.com Schottky Barrier Rectifiers FIG.1 - Forward Current Derating Curve FIG.2 - Maximum Non-Repetitive Surge Current Peak Forward Surge Current, (A) Average Forward Current, (A) 10.0 8.0 6.0 4.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 2.0 0 300 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 250 200 150 100 50 0 0 25 75 50 100 125 150 175 10 1 Case Temperature, (°C) FIG.3 - Typical Rever Characteristics 100 MBRF1030CT-G~MBRF1060CT-G MBRF1080CT-G~MBRF10100CT-G 100 10 Instantaneous Forward Current, (A) Instantaneous Reverse Current, (mA) 100 FIG.4 - Typical Forward Characteristics 1000 TJ=125°C 1.0 TJ=75°C 0.1 TJ=25°C MBRF1030CT-G~ MBRF1045CT-G 10 MBRF1050CT-G~ MBRF1060CT-G MBRF1080CT-G~ MBRF10100CT-G 1.0 TJ=25°C PULSE WIDTH 300US 2% DUTY CYCLE 0.1 0.01 0 20 40 60 80 100 120 140 FIG.5 - Typical Junction Capacitance 10000 TJ=25°C f=1MHz 1000 MBRF1050CT-G~ MBRF1060CT-G MBRF1080CT-G~ MBRF10100CT-G MBRF1030CT-G~ MBRF1045CT-G 100 0.1 1 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Instantaneous Forward Voltage, (V) Percent Of Rated Peak Reverse Voltage, (%) Capacitance, (pF) 20 Number Of Cycles at 60Hz 100 Reverse Voltage, (V) www.kersemi.com 1.0 Schottky Barrier Rectifiers Marking Code Part Number Marking code MBRF1030CT-G MBRF1030CT MBRF1040CT-G MBRF1040CT MBRF1045CT-G MBRF1045CT MBRF1050CT-G MBRF1050CT MBRF1060CT-G MBRF1060CT MBRF1080CT-G MBRF1080CT MBRF10100CT-G MBRF10100CT MBRF10XXXCT XX / XXX = Product type marking code C = Compchip Logo Standard Packaging TUBE PACK Case Type ITO-220AB TUBE BOX ( pcs ) ( pcs ) 50 2,000 www.kersemi.com