KEXIN 2SC3405

Transistors
SMD Type
NPN Silicon Triple Diffused Transistor
2SC3405
+0.15
6.50-0.15
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
TO-252
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
High colletor Breakdown Voltage: VCEO=800V
+0.15
0.50 -0.15
+0.2
9.70 -0.2
tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.3A
3 .8 0
Excellent Switching Times
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
900
V
Collector to emitter voltage
VCEO
800
V
Emitter to base voltage
VEBO
8
V
Collector current (DC)
IC
0.8
A
Collector current (Pulse)
Icp
1.5
A
Base Current
IB
0.2
A
Total Power dissipation Ta = 25
PC
TC = 25
1
W
20
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
100
ìA
1
mA
collector cutoff current
ICBO
VCB=800V,IE=0
emitter cutoff current
IEBO
VEB=8V,IC=0
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=1mA,IC=0
900
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA,IB=0
800
V
DC current Gain
hFE
VCE=5V,IC=1mA
6
VCE=5V,IC=0.3A
10
Collector-Emitter Saturation Voltage
VCE(sat)
IC=0.3A,IB=0.06A
0.5
V
Base- Emitter Saturation Voltage
VBE(sat)
IC=0.3A,IB=0.06A
1.2
V
tr
1
ìs
tstg
4.0
ìs
tf
1
ìs
Switching time turn-0n time
Switching storage time
Switching fall time
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