KEXIN FCX493

Transistors
SMD Type
NPN Silicon Planar Medium Power Transistor
FCX493
Features
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1
mA
Peak Pulse Current
ICM
2
A
Base Current
Power Dissipation at Tamb=25
Operating and Storage Temperature Range
IB
200
mA
Ptot
1
W
Tj:Tstg
-65 to 150
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1
Transistors
SMD Type
FCX493
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Max
Unit
Breakdown Voltages
V(BR)CBO
IC=100ìA
120
Breakdown Voltages
VCEO(sus)
IC=10mA*
100
V
Breakdown Voltages
V(BR)EBO
IE=100ìA
5
V
ICBO
VCB=100V
ICES
VCES=100V
100
nA
IEBO
VEB=4V
100
nA
IC=500mA, IB=50mA
0.3
V
Collector Cut-Off Currents
Emitter Cut-Off Current
V
100
nA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=100mA
0.6
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=100mA
1.15
V
Base-Emitter Turn On Voltage
VBE(on)
IC=1A, VCE=10V
1.0
V
Static Forward Current Transfer Ratio
Transition Frequency
hFE
fT
Collector-Base Breakdown Voltage
Cobo
IC=1mA, VCE=10V*
100
IC=250mA, VCE=10V*
100
IC=500mA, VCE=10V*
60
IC=1A, VCE=10V*
20
IC=50mA, VCE=10V,f=100MHz
150
VCB=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
Marking
Marking
2
Min
N93
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2%
300
MHz
10
pF